• Journal of information and communication convergence engineering
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• 제11권1호
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• pp.56-61
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• 2013

Modern integrated circuits (ICs) are becoming an integrated parts of analog, digital, and radio frequency (RF) circuits. Testing these RF circuits on a chip is an important task, not only for fabrication quality control but also for tuning RF circuit elements to fit multi-standard wireless systems. In this paper, RF test circuits suitable for embedded testing are introduced: RF power detectors, power control circuits, directional couplers, and six-port reflectometers. Various types of embedded RF power detectors are reviewed. The conventional approach and our approach for the RF power control circuits are compared. Also, embedded tunable active directional couplers are presented. Then, six-port reflectometers for embedded RF testing are introduced including a 77-GHz six-port reflectometer circuit in a 130 nm process. This circuit demonstrates successful calibrated reflection coefficient simulation results for 37 well distributed samples in a Smith chart. The details including the theory, calibration, circuit design techniques, and simulations of the 77-GHz six-port reflectometer are presented in this paper.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• 전자통신동향분석
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• 제36권3호
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.24-25
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• 2008

An Electrostatic discharge (ESD) protection has been a very important reliability issue in microelectronics, especially for RF (Radio Frequency) integrated circuits (ICs). This paper reviews design and analysis of on-chip ESD (electrostatic discharge) protection circuits for RF applications. Key issues in RF ESD protection, design methods, and RF ESD protection solutions are discussed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.615-616
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• 2006

Nowadays, the need of multi-mode/multi-band transceiver is rapidly increasing, so we design a direct conversion RF front-end for multi-mode/multi-band receiver that support WCDMA/CDMA2000/WIBRO standard. It consists of variable gain reconfigurable LNA and single input double balanced Mixer and complementary differential LC Oscillator. The circuit is implemented in 0.18 um RF CMOS technology and is suitable for low-cost mode/multi-band.

• 항공우주시스템공학회지
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• 제16권6호
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• pp.18-23
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• 2022

본 논문은 항공기에 사용되는 고주파 칩셋의 전파 차폐 구조에 대한 연구 결과를 제시한다. 전기전자 기술의 발전에 따라 항공기에 적용되는 전자 장비의 역할은 날로 증가하고 있으며, 고주파 무선장치는 넓은 주파수 대역에 대한 지원 및 소형화를 위한 초고주파 집적회로로 구현되고 있다. 특히, 항공용 집적소자는 이를 구현함에 있어 기능과 성능의 만족도 중요하지만, 예기치 않은 전파 간섭으로 인한 항공기 안전 위협이 보다 중요한 설계 요소로 작용한다. 본 논문에서는 전파에 의한 고주파 칩셋의 오동작 방지를 위한 차폐구조를 설계하고, 개구면 형태의 기하학적 구조를 적용하여 전기장 차폐성능이 향상되는 구조를 제안하였다.

• 대한전자공학회논문지SD
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• 제47권8호
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• pp.36-46
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• 2010

본 논문은 수 GHz를 상회하는 동작 주파수를 갖는 RF집적회로와 고속 디지털 인터페이스를 위한 ESD 보호회로의 다양한 설계방법을 기술한다. 입/출력에 상당한 양의 기생 커패시턴스를 가지는 ESD 보호소자는 입/출력 임피던스 매칭에 영향을 주며, 이득, 잡음 등의 RF특성을 열화시킨다. 본 논문에서는 이와 같은 ESD 보호소자의 악영향에 대해 분석하고, 이를 감쇄시킬 수 있는 방안을 논한다. 또한 RF 특성과 ESD 내성 측정을 통해 RF/ESD 병합설계 방법을 기존의 RF ESD 보호소자의 설계방법과 비교, 분석한다.

• 전자공학회논문지
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• 제52권4호
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• pp.88-95
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• 2015

본 논문에서는 부성저항을 생성하는 회로로 알려진 RFNR 회로에 대한 새로운 분석을 소개한다. 새로운 분석에서는 RFNR 회로에 대한 수식분석의 정확성을 높이기 위해 트랜지스터의 게이트 저항과 소스 커패시턴스에 의한 영향을 고려하였다. 기존의 분석에서는 트랜지스터의 소스를 통하여 수식을 분석하였지만 제안된 수식에서는 회로의 공진부인 트랜지스터의 게이트를 통하여 회로를 분석했다. 그 결과, 제안하는 분석은 고주파수에서 기존의 분석보다 정확도를 향상시킬 수 있었다. 본 논문에서는 시뮬레이션을 통해 고주파수에서 분석의 정확도를 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2052-2054
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• 2004

The TX/RX broadband L-type circular polarization antenna using LTCC at K/Ka band has been presented. This antenna has been analyzed in compensation for LTCC with relative permittivity 5.2 and could have been integrated with RF component. As the measured 10dB impedance circular polarization bandwidth of the proposed antenna is 7%(20.8GHz${\sim}$22.2GHz) at the K band and 2.3%(30.9GHz to 31.6GHz) at the Ka band. Also the gain of the antenna is -0.7${\sim}$3.05dBi at the K band and -2.8${\sim}$1dBi at the Ka band. The purpose of the research is to design an efficient antenna structure for satellite communication at K/Ka band. the antenna should be used for both TX and RX frequency bands. The antenna will be mounted on LTCC(Low Temperature Co-fired Ceramic) so that it can be integrated with other RF circuits. This research is important because of the following reasons. 1) The frequency ranges of satellite communication tends to move up to higher frequency such as Ka band or milimeter wave band. 2) Design of antenna for smaller size, lighter weight and less loss is preferred by most RF engineers. 3) Antennas on LTCC enables to integrate the antenna with other RF circuits, and thus, one can reduce the size and loss of the RF system.