• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• Journal of the Korea Institute of Military Science and Technology
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• v.20 no.3
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• pp.413-420
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• 2017

We investigate the performance of a true time delay(TTD) phase shifter to reduce the beam squint caused by frequency changes of a phased array antenna in wideband communication systems. To design a high gain phased array antenna, we need a long TTD, which causes high RF loss, low resolution and large dimension of TTD phase shifters. To overcome the problems, we propose a schematic of dual TTD phase shifters, which consists of short time delay(STD) in radio frequency(RF) part and long time delay(LTD) in intermediate frequency(IF) part. Our analysis results show that the proposed scheme reduces the required bits and delay time in RF band of the TTD compared to the conventional single TTD scheme.

• Journal of Surface Science and Engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1401-1403
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• 1995

This paper investigates the light output characteristics of an electrodeless H-discharge lamp. The existing cylindrical fluorescent lamps were wound around with an induction coil of varying size, and were driven by RF power. The light output and the luminous efficacy were measured according to variations of the induction coil gap and the lamp power, respectively. The experimental results show that the luminous efficacy of the lamp is as much as existing electrodeless lamps and the luminous efficacy of lamps are high between 10W and 20W. Theoretical analyses using computer simulation show that the circuit matching is easier in the external coil configuration than in the internal one, and that the current and the power distributions near the coil are shower in t.

• ETRI Journal
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• v.16 no.1
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• pp.59-72
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• 1994

In this paper, a new N-way hybrid power combiner for improving the graceful degradation performance has been proposed. The proposed combiner has been configured with two dummy transmission lines per each section, where each dummy transmission line has a different characteristic impedance, of the standard combiner. Under this proposed configuration, a detailed theoretical analysis has been performed to show the general function of a power combiner. When any M amplifiers among N identical amplifiers are suffering the failure mode in a power combining circuit or system, the graceful degradation performance has been improved due to the separation of a transmission line and an internal resistor in every failed section from the proposed combiner by simultaneously operating two shorting devices. Simulation results for all the items which can be measured from all the items which can be measured from the proposed combiner with an eight-way configuration have been presented.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.220-229
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• 2004

We have examined a technique of one-dimensional (1D) fluid modeling for radio-frequency Ar capacitively coupled plasmas (CCP) between unequal-sized powered and grounded electrodes. In order to simulate a practical CCP reactor configuration with a grounded side wall by the 1D model, it has been assumed that the discharge space has a conic frustum shape; the grounded electrode is larger than the powered one and the discharge space expands with the distance from the powered electrode. In this paper, we focus on how much a 1D model can approximate a 2D model and evaluate their comparisons. The plasma density calculated by the 1D model has been compared with that by a two-dimensional (2D) fluid model, and a qualitative agreement between them has been obtained. In addition, 1D and 2D calculation results for another reactor configuration with equal-sized electrodes have also been presented together for comparison. In the discussion, four CCP models, which are 1D and 2D models with symmetric and asymmetric geometries, are compared with each other and the DC self-bias voltage has been focused on as a characteristic property that reflects the unequal electrode surface areas. Reactor configuration and experimental parameters, which the self-bias depends on, have been investigated to develop the ID modeling for reactor geometry with unequal-sized electrodes.

• Proceedings of the IEEK Conference
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• 2000.06e
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• pp.171-174
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• 2000

In stead of RF module which has been used conventionally in many remote measurement applications, a new type of remote measurement system based on PCS(Personal communication system) and one chip Microcontroller is proposed in this work. PCS has many advantages with respect to cost reliability, communication quality, and so on. The proposed system consists of three different modules: PCS module, micro-controller module, and sensor module. System configuration as well as illustrative experiments will be described in detail.

• Electronics and Telecommunications Trends
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• v.18 no.2 s.80
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• pp.67-78
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• 2003

모든 RF 통신 시스템에서 사용되는 마이크로파 필터는 통과 대역에서 에너지를 전달하고, 저지 대역에서 에너지를 감쇄시키는 역할을 한다. 주파수 사용 효율을 높이기 위해서 대역내 평탄도 및 군지연 특성이 우수하고, 대역외에서 높은 감쇄를 갖는 필터 개발에 많은 연구가 이루어졌다. 본 고에서 필터 개발에 필수적인 전달 함수 특성 및 결합 구조에 관하여 고찰한다.