• Information and Communications Magazine
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• v.19 no.12
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• pp.74-82
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• 2002

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2286-2292
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• 2011

In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1237-1241
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• 2003

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1205-1214
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• 2013

Recently spaceborne SAR systems are increasing image resolution and frequency. As a high quality image resolution, the wider bandwidth is required and a wideband signal generator with RF component is very complicated and RF impairments of device is increased. Therefore, it is very important to improve performance by reducing these errors. In this study, the transmission signal of the wideband signal generator is applied to the phase noise, IQ imbalance, ripple gain, nonlinear model of high power amplifier. And we define possible structures of wideband signal generator and measure the PSLR and ISLR for the performance assesment. Also, we extract error of the amplitude and phase from the waveform and use a quadratic polynomial curve fitting and examine the performance change due to nonlinear device. Finally, we apply a high power amplifier predistortion method for non-linear error compensation. And we confirm that distortion in the output of the amplifier by intermodulation component is decreased by 15 dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.2
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• pp.77-85
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• 2014

Recently, utilization of MIMO(Multi-Input Multi-Output) system using array antennas is evaluated significantly according to the extension of high-capacity and high-speed communication services. However, MIMO system has disadvantages such as high-complexity and high-power-consumption, because RF(Radio Frequency) chain is required as antenna number, and several array antenna is used in conventional MIMO system. In order to solve these problems, research about beamspace MIMO system using ESPAR(Electronically Steerable Parasitic Array Radiator) antenna that has single RF chain by using one active antenna and several parasitic elements has been studied actively. Beamspace MIMO system using ESPAR antenna is possible to solve the problems of conventional MIMO system, because this system is composed by single RF chain. In this paper, in order to improve the system security, chaos communication algorithm that has characteristics such as non-periodic, non-predictability, easy implementation and initial condition is applied to QPSK (Quadrature Phase Shift Keying) modulated beamspace MIMO system. We design the chaos QPSK modulated beamspace MIMO system, and evaluate SER performance of this system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.234-234
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• 2011

IGZO 투명 전도 박막은 TFT-LCD에 사용되는 투명 전도성 산화물 박막으로서 다양한 광전자 소자의 투명 전극으로 널리 사용되고 있다. 본 연구에서는 RF magnetron sputtering법으로 corning 1737 유리기판 위에 RF 파워의 변화에 따라 증착한 IGZO박막의 광학적 전기적 특성 변화를 연구하였다. 박막 증착 조건은 초기 압력 $2.0{\times}10^{-6}$ Torr, 증착 압력 $2.0{\times}10^{-2}$ Torr, 반응가스 Ar 50 sccm, 증착 온도는 실온으로 고정하였으며, 공정변수로 RF 파워를 25 w, 50 w, 75 w, 100 w로 변화시키며, IGZO 타겟은 $In_2O_3$, $Ga_2O_3$, ZnO 분말을 각각 1 : 1 : 2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였다. 표면분석(AFM)결과 RF 파워가 증가함에 따라 거칠기가 증가하였으며, XRD 분석결과 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인할 수 있었다. 가시광 영역에서 (450 nm~700 nm) 25 w일 때 85% 이상을 확인하였고, RF 파워가 증가할수록 밴드갭이 감소하는 것을 확인하였다. RF 파워가 100 w인 경우 carrier 밀도는 $7.0{\times}10^{19}\;cm^{-3}$, Mobility 13.4 $cm^2$/V-s, Resistivity $6.0{\times}10^{-3}\;{\Omega}-cm$로 투명전도막의 특성을 보였다.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.11-14
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• 2007

CMOS technology 기반의 고주파 직접회로에서는 충분한 이득과 안정성을 얻기 위하여 inductor, capacitor와 같은 수동 소자를 적절히 사용하여 설계하여야 한다. 이와 같은 수동 소자는 CMOS 집적회로에서 넓은 면적을 차지하는 단점이 있다. 고주파 증폭기의 부하를 능동 소자로 대체하게 되면 작은 크기로 회로의 제작이 가능하게 되나, 능동 소자는 수동 소자에 비하여 선형 특성이 좋지 않기 때문에 실제로 고주파 증폭기 설계에 사용하지 않는다. 본 논문에서는 이와 같은 능동 소자의 비선형성을 억제하면서, 동시에 회로의 크기를 줄일 수 있는 기능성 능동 부하를 적용한 고주파 증폭기를 설계하였다. 기능성 능동 부하는 2개의 MOSFET은 대칭으로 연결된 구조를 가지며, 하나의 MOSFET은 일반적인 load로 동작하며, 다른 MOSFET은 gate에 가변 전압을 인가함으로써, 증폭기의 전달함수를 변화시킬 수 있다. 이와 같은 특성을 이용하여 고주파 증폭기의 선형성을 보상할 수가 있다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1307-1308
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• 2007

본 연구에서는 비선형 저항 특성을 지진 산화 몰리브덴 (MoO3) 소자를 이용한 새로운 피뢰 소자 기술을 제안한다. MoO3 소자는 가열법과 RF 스퍼터링법에 의해 각각 제작하였으며, 이들을 서로 겹쳐서 제작된 양면박막의 갭형 소자에 대해, 절연내력, 응답특성 등의 전기적 특성과 방전 후의 표면 특성 변화 등에 대하여, 실험적으로 고찰하였다. 그 결과, MoO3 소자는 총 10회로 연속적으로 인가한 임펄스 전압실험에서 양호한 동작을 보였으며, 2회 인가 시, 저항 값이 다소 감소하기는 하였으나, 약 $800k{\Omega}$의 저항 값을 일정하게 유지하여 피뢰 소자로서의 성능을 계속 유지할 수 있음을 확인할 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.