• Title/Summary/Keyword: RF 마그네트론 스퍼터링

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Electrical and Optical Properties of Ga-doped ZnO Thin Films Deposited at Different Process Pressures by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 제작된 Ga-doped ZnO 박막의 공정압력에 따른 전기적, 광학적 특성)

  • Jeong, Seong-Jin;Kim, Deok-Kyu;Kim, Hong-Bae
    • Journal of the Korean Vacuum Society
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    • v.21 no.1
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    • pp.17-21
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    • 2012

  • Ga-doped ZnO (GZO) thin films for application as transparent conducting oxide film were deposited on the glass substrate by using rf-magnetron sputtering system. The effects of working pressure on electrical and optical characteristics of GZO films were investigated. Regardless of the working pressure, all films were oriented along with the c-axis, perpendicular to the substrate. The electrical resistivity was about $8.68{\times}10^{-3}{\Omega}{\cdot}cm\sim2.18{\times}10^{-3}{\Omega}{\cdot}cm$ and the average transmittance of all films including substrates was over 90% in the visible range. The good transparents and conducting properties were obtained due to controle the working pressure. The obtained results have acceptable for application as transparent conductive electrodes in LCDs and solar cells.

  • https://doi.org/10.5757/JKVS.2012.21.1.17 인용 PDF KSCI