• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.394-400
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R. F. magnetron sputtering technique. The electrochemical results for lithium secondary battery anodes showed that addition of silicon decreases the oxidic state of tin, and, hence, reduced the irreversible capacity during the first discharge/charge cycle. The (110),(101),(211) planes were grown with increasing substrate temperatures. The reversible capacity of thin films fabricated in conditions of $300^{\circ}C$ substrate temperature and 7:3 $Ar:O_2$ ratio was 700 mAh/g.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.840-845
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• 2002

As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,\;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{\circ}C$ and 500$^{\circ}C$, respectively and then some specimens were annealed at 500$^{\circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{\circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.7
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• pp.974-979
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• 2013

$TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.116.1-116
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• 2002

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.144-149
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• 2005

ZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from $\~40$ MPa to $\~-1100$MPa depending on processing variables. The specimens were thermally cycled from R.T. to $250^{\circ}C$ to investigate the stress variation as a function of temperature. SEM was employed to characterize the microstructure of te films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property o the films was studied by PL measurements. At the highest substrate temperature $800^{\circ}C$ the film exhibited sharper UV peaks unlike other conditions.

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.71-71
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• 1999

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.367-372
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• 2000

ZnO thin films were deposited on amorphous slide glass and $SiO_2$/Si substrates by Facing Targets Sputtering method with sputtering current 0.1~0.8 A, working pressure 0.5~3 mTorr and substrate temperature R.T~$400^{\circ}C$. When the sputtering current was 0.4 A, working pressure was 0.5 mTorr and substrate temperature was 30$0^{\circ}C$, ${\Delta}{\Theta}_{50}$ value of ZnO/glass and ZnO/$SiO_2$/si thin film was $3.8^{\circ}$ and $2.98^{\circ}$, respectively. In these conditions, we knew that ZnO thin film were deposited with good c-axis orientation on amorphous slide glass by FTS system.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.