• 제목/요약/키워드: R&D Center

검색결과 9,930건 처리시간 0.041초

Synthesis and Structure-Activity Relationships of Novel Compounds for the Inhibition of TNF-$\alpha$ Production

  • Park, Joon-Seok;Baik, Kyong-Up;Son, Ho-Jung;Lee, Jae-Ho;Lee, Se-Jong;Choi, Jae-Youl;Park, Ji-Soo;Yoo, Eun-Sook;Byun, Young-Seok;Park, Myung-Hwan
    • Archives of Pharmacal Research
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    • 제23권4호
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    • pp.332-337
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    • 2000
  • This study describes the synthesis, in vitro evaluation and molecular modeling study of novel compounds for the inhibition of TNF-$\alpha$production, Among these compounds, 2-[3-(cyclopentyloxy)-4-methoxyphenyl]-1-isoindolinone (9) was selected as a lead compound and its pyridine derivative 10 was more potent in activity and safer than rolipram.

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New Cu Process and Short Channel TFT

  • Yang, J.Y.;Hong, G.S.;Kim, K.;Bang, J.H.;Ryu, W.S.;Kim, J.O.;Kang, Y.K.;Yang, M.S.;Kang, I.B.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1189-1192
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    • 2009
  • Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

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The effect of plasma damage on electrical properties of amorphous GaInZnO film

  • Kim, Min-Kyu;Park, Jin-Seong;Jeong, Jae-Kyeong;Jeong, Jong-Han;Ahn, Tae-Kyung;Yang, Hui-Won;Lee, Hun-Jung;Chung, Hyun-Joong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.640-643
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    • 2007
  • The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

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Micronucleus test of SS cream and CJ-4001 using Acridine orange staining method

  • Park, Jie-Eun;Lee, Sung-Hak;Choi, Jae-Mook;Kim, Il-Hwan;Kim, Taek-Rho;Kim, Deog-Yeor;Noh, Hyun-Jung;Kang, Hee-Chol;Cho, Hi-Jae;Kim, Young-Hoon
    • 대한약학회:학술대회논문집
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    • 대한약학회 2003년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.2-2
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    • pp.118.1-118.1
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    • 2003
  • SS cream and its revised formula, CJ-4001 is topical Chinese herbal drugs for premature ejaculation. To evaluate the genotoxic potentials of these drugs, micronucleus test using Acridine orange (AO) staining method was performed. Acridine orange (AO) staining is adopted in OECD guideline 474 and widely used in micronucleus test. In dose range finding study, no mouse was dead at 2000 mg/kg using single treatment subcutaneously. Therefore, 3 dose levels were chosen at 500, 1000, 2000 mg/kg. (omitted)

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Spin-transfer Torque Switching in nano-sized MTJ

  • Oh, S.C.;Lee, J.E.;Nam, K.T.;Jeong, J.H.;Yeo, I.S.;Kim, S.T.;Han, W.S.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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    • pp.61.2-61.2
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    • 2007
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가스플랜트 사업단에서 연구관리스템 구축 (The establishment of R&D management system for Gas Plant R&D Center)

  • 황성하;유선일;남태완
    • 시스템엔지니어링학술지
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    • 제4권1호
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    • pp.19-29
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    • 2008
  • Traditionally gas plant R&D has had a world-wide weak position in terms of high technology. Especially System engineering did not exactly apply to gas plant construction. So, Gas Plant R&D Center is determined to make the establishment of the system engineering for the standard of gas plant. Gas Plant R&D Center has two projects. Firstly, the establishment of the R&D management system. Secondly, the system engineering which is included in the VE concept of EPC parts. But Gas Plant R&D Center exists in the particular conditions for successful development of the new process and core equipments. Now we will describe the establishment of R&D management system and particular conditions(Risk Conditions) for gas plant.

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