• 한국전자파학회논문지
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• 제17권8호
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• pp.713-718
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• 2006

본 논문에서는 하나의 단말기로 다수의 서비스를 제공할 수 있는 5밴드 폴디드 모노폴 안테나를 설계 제작하였다. 폴디드 모노폴 안테나의 접힌 구조를 통한 직렬 커패시턴스 보상과 물리적인 길이를 조절하여 이득을 높일 수 있는 특성을 이용하였다. 이 안테나는 CDMA/GSM/DCS/USPCS/WCDMA 5밴드 대역 특성을 만족하고 있으며, 제작에 있어서도 기존의 프레스 제작 형태가 아닌 유연성 기판(flexible PCB) 기술을 이용함으로써 낮은 생산 가격을 실현하였다 정합단을 적용한 안테나는 5밴드 대역에서 최대 이득 $-2.51{\sim}+1.82 dBi$ 결과가 나왔고, 방사 패턴 또한 전방향성 특성을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.272.1-272.1
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• 2016

In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).