• Bulletin of the Korean Chemical Society
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• 제25권6호
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• pp.934-936
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• 2004

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.90-94
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• 2006

We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국광학회지
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• 제9권5호
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• pp.333-341
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• 1998

본 논문에서는 기존의 분포궤환형 레이저 다이오드와 광흡수 변조기(DFB-LD/EA­ MOD.)가 집적된 소자의 낮은 광효율과 수율의 문제점을 해결하고, 동시에 우수한 chirp특성을 나타내는 분포반사기 레이저 다이오드와 광흡수 변조기 (DR-LD/EA­MOD.)가 집적된 소자를 제안하였다. DR-LD/EA­MOD. 집적소자는 제작상으로 DR-LD/EA­MOD. 소자와 비교해서 선택 MOVPE성장시 SiO2 마스크 폭만 조절하는 것 외엔 거의 동일하므로 실용적 측면에서도 우수한다. 집적소자의 정특성 및 동특성을 해석하기 위하여 시간의존성을 갖는 전달 메트릭스방법, 활성층내의 비율 방정식, 변조기의 QCSE효과를 고려한 Schrodinger 방정식을 동시에 풀이하였다. 1.55$\mu\textrm{m}$ DR-LD/EA­MOD. 집적소자와 종래 사용중인 1.55$\mu\textrm{m}$ DR-LD/EA­MOD. 집적소자의 성능을 비교 분석하여, LD에 동일전류를 주입할 경우 광변조기의 on상태의 광출력이 약 30%이상 향상되고, 동일 광변조기의 잔류단면반사율에 대해 광출력의 ripple이 적고, 동적파장 천이량이 약 50%이상 줄어듦을 알 수 있었다. 또한 DR-LD/EA­MOD. 소자는 시분할 파장특성은 광 펄스의 leading edge에서 blue-shift, falling edge에서 red-shift 특성이 기대되었다. 이는 일반적인 단일모드 광섬유를 사용하여 광 펄스를 전송할 경우 전송시 펄스 폭이 좁아지는 효과를 주어 이로 인해 전송대역폭을 크게 향상시킬 수 있음을 의미한다.