• 제목/요약/키워드: Quantum dot light-emitting diode (QLED)

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ZnO 박막 전자수송층의 공기 노출에 의한 양자점 발광다이오드의 특성 변화 (Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode )

  • 서은용;이경재;황정하;김동현;임재훈;이동구
    • 센서학회지
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    • 제32권6호
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    • pp.455-461
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    • 2023
  • We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

Recent Progress in High-Luminance Quantum Dot Light-Emitting Diodes

  • Rhee, Seunghyun;Kim, Kyunghwan;Roh, Jeongkyun;Kwak, Jeonghun
    • Current Optics and Photonics
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    • 제4권3호
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    • pp.161-173
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    • 2020
  • Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 105 cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.