• Title/Summary/Keyword: Quantum community

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Quantum Secure Direct Community using Time Lag (시간지연을 이용한 양자비밀직접통신)

  • Rim, Kwang-cheol;Lim, Dong-ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.12
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    • pp.2318-2324
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    • 2017
  • Quantum cryptography, which is emerging as a next generation password, is being studied by quantum cryptographic transfer protocols and quantum secret communication. Quantum key transfer protocol can be used in combination with the modern password because of the inefficiency of the use of the password, or the use of OTP(one time password). In this paper an algorithm for direct communication by means of direct cryptographic communications rather than quantum keys. The method of implementing quantum secure direct community was adopted using 2-channel methods using Einstein gravity field. Two channels were designed to adopt a quantum secret communication protocol that applies time delay between 2-channels of channel to apply time difference between 2-channels. The proposed time delay effect reflects the time delay by reflecting the gravitational lensing phenomenon. Gravity generator with centrifugal acceleration is incorporated in the viscometer, and the time delay using this implies the correlation between the variance of the metametry.

Integer and fractional quantum Hall effect in graphene heterostructure

  • Youngwook Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.1
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    • pp.1-5
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    • 2023
  • The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

Material Design Using Multi-physics Simulation: Theory and Methodology (다중물리 전산모사를 이용한 물성 최적화 이론 및 시뮬레이션)

  • Hyun, Sangil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.12
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    • pp.767-775
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    • 2014
  • New material design has obtained tremendous attention in material science community as the performance of new materials, especially in nano length scale, could be greatly improved to applied in modern industry. In certain conditions limiting experimental synthesis of these new materials, new approach by computer simulation has been proposed to be applied, being able to save time and cost. Recent development of computer systems with high speed, large memory, and parallel algorithms enables to analyze individual atoms using first principle calculation to predict quantum phenomena. Beyond the quantum level calculations, mesoscopic scale and continuum limit can be addressed either individually or together as a multi-scale approach. In this article, we introduced current endeavors on material design using analytical theory and computer simulations in multi-length scales and on multi-physical properties. Some of the physical phenomena was shown to be interconnected via a cross-link rule called 'cross-property relation'. It is suggested that the computer simulation approach by multi-physics analysis can be efficiently applied to design new materials for multi-functional characteristics.

FRET-Based Quantitative Discrimination of Bisulfite-Untreated DNA from Bisulfite-Treated DNA

  • Lee, Eun Jeong;Cho, Yea Seul;Song, Seongeun;Hwang, Sang-Hyun;Hah, Sang Soo
    • Bulletin of the Korean Chemical Society
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    • v.35 no.5
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    • pp.1455-1459
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    • 2014
  • We report a sensitive and reliable FRET-based nanotechnology assay for efficient detection and quantification of bisulfite-unmodified or modified DNA. Bisulfite-untreated DNA or bisulfite-treated DNA is subjected to PCR amplification with biotin-conjugated primers so that the amounts of bisulfite-untreated and treated DNA can be differentiated. Streptavidin-coated quantum dots (QDs) are used to capture biotinylated PCR products intercalated with SYBR Green, enabling FRET measurement. Key features of our method include its low intrinsic background noise, high resolution, and high sensitivity, enabling detection of as little as 1.75 ng of bisulfite-untreated DNA in the presence of an approximately 1,000-fold excess of bisulfite-untreated DNA compared to bisulfate-treated DNA, with the use of PCR reduced (as low as 15 cycles). SYBR Green as an intercalating dye as well as a FRET acceptor allows for a single-step preparation without the need for primers or probes to be chemically conjugated to an organic fluorophore. Multiple acceptors per FRET donor significantly enhance the signal-to-noise ratio as well. In consideration of the high relevance of bisulfite treatment to DNA methylation quantitation, our system for FRET measurement between QDs and intercalating dyes can be generally utilized to analyze DNA methylation and to potentially benefit the scientific and clinical community.

Bandgap Engineering in CZTSSe Thin Films via Controlling S/(S+Se) Ratio

  • Vijay C. Karade;Jun Sung Jang;Kuldeep Singh, Gour;Yeonwoo Park;Hyeonwook, Park;Jin Hyeok Kim;Jae Ho Yun
    • Current Photovoltaic Research
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    • v.11 no.3
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    • pp.67-74
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    • 2023
  • The earth-abundant element-based Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (Voc) and short circuit current density (Jsc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.