• 전기화학회지
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• 제10권4호
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• pp.257-261
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• 2007

The electronic properties of quantum dots can be tuned by changing the size of particles without any change in their chemical composition. CdSe quantum dots, the sizes of which were controlled by changing the concentrations of Cd and Se precursors, were adsorbed on $TiO_2$ photoelectrodes and used as sensitizers for photovoltaic cells. For applications of CdSe quantum dot as sensitizers, $CdSe/TiO_2$ films on conducting glass were employed in a sandwich-type cell that incorporated a platinum-coated conductive glass and an electrolyte consisting of an $I^-/I_3^-$ redox. The fill factor (FF) and efficiency for energy conversion ($\c{c}$) of the photovoltaic cell was 62 % and 0.32 %, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.249.1-249.1
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• 2015

Quantum dots (QDs) are attracting growing attention for photovoltaic device applications because of their unique electronic, optical and physical properties. Lead sulfide (PbS) QDs are one of the most widely studied materials for the devices and known to have size-tunable properties. In this context, we investigated the relationship between the size of PbS QDs and two synthesizing conditions, a concentration of ligand, oleic acid in this work, and injection temperature. The inverted colloidal quantum dot solar cells based on the heterojunction of n-type zinc oxide layer and p-type PbS QDs were also fabricated. The size of the QDs and cell properties were observed to depend on both the QD synthesizing conditions, and hence the overall efficiency of the cell could vary even though the size of QDs used was same. The QD synthesizing conditions were finally optimized for the maximum cell efficiency.

• 청정기술
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• 제16권4호
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• pp.292-296
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• 2010

황화납(PbS)을 감응물질로 하는 양자점 감응형 태양전지를 제작하고 효율을 측정해 보았다. 기판에 산화아연(ZnO) 나노선을 기른 후 SILAR(Successive ionic layer adsorption and reaction)법으로 PbS 양자점을 합성하고 이를 주사전자현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. SILAR를 통해서 형성된 나노이종구조는 PbS 나노입자들이 ZnO 나노선 위에 균일하게 성장한 것을 확인할 수 있었다. 본 실험에서 PbS을 이용한 양자점 감응형 태양전지의 최고 효율은 one sun에서 0.075%로 나타났으며, 이는 기존의 다른 감응 물질에 비해 비교적 낮은 효율을 나타내었다. 이러한 요인으로는 i) ZnO와 PbS의 밴드갭 배열이 Type-I 형을 이룰 수 있는 가능성, ii) 다양한 크기의 밴드갭을 가지는 PbS에 의한 전자이동 방해 효과, iii) 전해질에 의한 PbS의 안정성 저하 등의 이유를 생각해 볼 수 있으며, 이를 해결하기 위해서는 PbS의 크기분포 조절과 새로운 전해질에 대한 연구가 향후 필요할 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.249.2-249.2
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• 2015

Connecting two or more sub-cells is a simple and effective way of improving power conversion efficiency (PCE) of solar cells, and the theoretical efficiency of this tandem cell is known to reach 85~88% of the sum of the sub-cell's efficiencies. There are two ways of connecting sub-cells in the tandem structure, i.e. parallel and series connection. The parallel connection can increase the short circuit current (Jsc) and the series connection can increase the open circuit voltage (Voc). Although various tandem structures have been studied, the full use of incident light and optimization of cell efficiency is still limited. In this work, we designed series tandem solar cells consisting of lead sulfide (PbS) quantum dots/zinc oxide-based QDSC and zinc phthalocyanine (ZnPc)/C60-based small molecule OSCs. It is expected that the loss of the incident light is minimized because the absorption range of the PbS quantum dots and ZnPc is significantly different, and the Voc increases according to the Kirchhoff's law.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.384-384
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• 2011

양자점 감응형 태양전지는 염료감응형 태양전지와 비슷한 구조를 가지지만, 유기물 염료를 대신하여 무기물 양자점을 사용함으로서 기존 유기물 염료가 가지는 한계점을 극복할 수 있다. 양자점을 광감응 염료로 사용하는 경우 양자제한효과(quantum confinement effect)에 의해 양자점의 사이즈조절만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 유기물 염료보다 광흡수 능력도 뛰어나다. 더불어, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는(multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 고효율의 양자점 감응형 태양전지 개발을 위해, ZnO 나노선 구조에 CdS, CdSe 양자점을 증착한 CdSe/CdS/ZnO 나노선 헤테로구조를 수열합성법으로 합성하였다. 증착한 CdSe/CdS 양자점이 태양광의 가시광 전 영역을 흡수하여 전자-정공을 생성하며, 세 물질 간의 밴드구조를 통해 양자점에서 생성된 전자가 ZnO 나노선으로 포집되고, 바닥전극으로 직접연결이 되어있는 1차원의 나노선 구조를 통해 전자를 효율적으로 운반할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.369-369
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• 2011

양자점 감응형 태양전지는 가시광 영역을 흡수, 이용할 수 있는 광감응 물질로 무기물 양자점을 사용하며, 이 경우 나노미터 크기의 무기물 양자점으로 인한 양자제한 효과 (quantum confinement effect)에 의해 양자점의 사이즈 조절 만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는 (multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 양자점 및 염료 감응형 태양전지분야에서 가장 많이 사용되고 있는 TiO2 다공성 필름이 아닌, ZnO 나노선 구조를 이용하여 양자점 감응형 태양전지를 제작하였다. ZnO의 경우 TiO2보다 높은 전자이동도를 가지며, 나노선 구조가 바닥전극까지 수직 연결된 1차원의 전자전달경로를 제공하여 결과적으로 광전자 포집에 유리하다. 또한, CdS, CdSe 양자점을 동시에 사용하여 광흡수 범위를 가시광 전 영역으로 확장하였으며, 계단형 밴드구조를 통해 광전자-정공 분리 및 포집을 용이하게 하였다. 더 나아가 전해질의 조성, 나노선의 길이 등 다양한 부분을 조절하면서 각 변수가 소자의 효율에 미치는 영향을 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2014

We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.