• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.24 no.66
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• pp.59-67
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• 2001

This thesis is to research for analysis of ISO 9000 Quality Management System application status of small & medium-sized Industrial Companies. For this research, 10 companies certified by ISO 9000 standard were selected. By using an evaluation method and a software for analysis of application, this thesis compared, analyzed and evaluated the application status before and after certificate of ISO 9000, and identified the performance and difficulty of QMS application, and then proposed improvement methodology for ISO 9000 effective application.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.302-302
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.213-213
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• 2009

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.339-342
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• 1998

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.195-195
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• 2008

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2002.05a
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• pp.817-824
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• 2002

자연재해, 인위적인 재해 등 회사 경영에 관련해 다양한 리스크 문제가 나타나고있으며 리스크에 대한 적절한 대응을 하고 안정화를 도모함과 동시에 리스크 문제가 표면화되어 초래하는 영향을 극소화하기 위한 포괄적인 새로운 패러다임의 경영시스템 도입이 주요 전략과제로 대두되고 있다. 본 연구에서는 리스크 위험 요소를 줄이고 품질 향상의 목적으로 기업의 경쟁력 강화를 위한 새로운 모델로써 기존 ISO 9000 품질경영시스템과 JIS Q2001 리스크 경영시스템의 통합모델을 제시하고자 한다.

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.883-888
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• 2001

We describe an ion-surface scattering apparatus newly developed to investigate the reactive scattering process of low-energy alkali-metal ions at surfaces. The apparatus consists of an alkali-metal ion gun that is rotatable by 360°, a quadrupole mass spectrometer (QMS) with an ion energy analyzer, a sample manipulator with a heating-and-cooling stage, and an ultrahigh vacuum (UHV) chamber that houses these components. Preliminary experimental results obtained from the apparatus are presented on angular and energy distributions of the ions scattered from clean Pt(111) and water-adsorbed Pt surfaces.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.29-35
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• 1999

Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.