• Medical Lasers
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• v.8 no.2
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• pp.74-79
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• 2019

Periorbital melasma is often refractory to treatment and highly associated with rebound hyperpigmentation or mottled hypopigmentation after laser treatment in Asian patients. In this report, we describe 2 patients with cluster-1 periorbital melasma and 1 patient with cluster-2 periorbital melasma who experienced remarkable clinical improvements after microwave-generated, atmospheric-pressure, non-thermal nitrogen plasma treatments. All patients exhibited limited clinical responses after combination treatments with topical bleaching agents, systemic oral tranexamic acid, and low-fluenced Q-switched neodymium (Nd):yttrium-aluminum-garnet (YAG) lasers. Low-energy nitrogen plasma treatment at 0.75 J elicited remarkable clinical improvement in the periorbital melasma lesions without post-laser therapy rebound hyperpigmentation and mottled hypopigmentation. We deemed that a single pass of nitrogen plasma treatment at 0.75 J induces mild microscopic thermal tissue coagulation and modification within the epidermis while preserving the integrity of the basement membrane in patients with periorbital melasma. Accordingly, nitrogen plasma-induced dermal tissue regeneration could play a role in the treatment of melasma lesions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.74-79
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• 1994

The characteristics of the type I and type II SHG in LiB305 crystals grown by TSSG method have been investigated using 1064 nm beam from a Q-switched Nd:YAG laser. The measured phase matching angles and angular acceptance bandwidths were $\theta_m=90^{\circ}, \phi_m=11.6^{\circ}$, <$\delta\theta_{int}L_{1/2}=3.3^{\circ}-cm^{1/2}, \theta\phi_{int}L=0.27^{\circ}-cm^{1/2}$ for type I SHG and $\theta_m=20^{\circ}, \phi_m=90^{\circ}$, TEX>$\delta\theta_{int}L_=0.65^{\circ}-cm, \theta\phi_{int}L^{1/2}=3.5^{\circ}-cm^{1/2}$ for type II SHG, respectively. Thp. type I NCPM temperature of 1064 nm beam was found to be $149^{\circ}C$ with the temperature bandwidth $\DeltaTL$of $4.8^{\circ}C-cm$. An energy conversion efficiency of about 1.8% with 2.6 mm thick LBO crystal at an incident power of TEX>$171 MW/\textrm{cm}^2$ was demonstrated. The measured $d_{32} was 0.74\pm0.05 pm/V$..

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.95-101
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• 1999

We have studied the 1.54$\mu\textrm{m}$ forward and backward stimulated Raman scattering (SRS) and stimulated Brillouin scattering (SRS) for various $CH_4$pressures by 1.06$\mu\textrm{m}$ Q-switched Nd:YAG laser pumping under a repetition rate of Hz in single pass. We obtained that the output of backward SRS was more efficient than that of the forward SRS. The output energy and conversion efficiency of forward and backward SRS were higher than those of SBS since SRS is a steady state, but SBS is a transient state. In a $CH_4$gas uncirculating system, the output energy of the backward SRS and SBS were reduced the about 47% due to a thermal heating of $CH_4$medium in a focusing region for a repetition rate of 5 Hz. But, the output energy of forward SRS was slightly enhanced by about 8.5% due to the increase of the undepleted pump beam in the backward SRS generation. Inthe Raman half resonator using a dichromatic focusing lens, the conversion efficiency of SRS was more than 37% for a input pump laser energy of 40 mJ.