• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.13 no.4
• /
• pp.201-208
• /
• 2013

This paper is a study of an empirical design of an open-ended coaxial cavity resonator. It can be done by using the radius of the inner conductor, the inner radius and the length of the resonator. However, the basic coaxial transmission -line theory can be seen that the characteristics of the resonant frequency and the Q value are varied by the change of length, regardless of the value of radius of the inner conductor and inner radius of the resonator. We find out the impact of radius of the inner conductor, inner radius of the resonator and the length of the resonator parameter and propose the optimized empirical resonator design method by reducing the error between the theoretical value and the design value. Based on the simulation, several resonators are fabricated by the size of 14 mm for the radius of inner conductor, 2 mm, 5 mm, 10 mm respectively for the inner radius of resonator, and 8.5 mm for the length of the resonator. The resonant frequencies of the produced resonators were measured at 6.1, 5.7, 6.5 GHz respectively. According to the result of simulation and measurement, we know that we can design the relatively exact open-ended coaxial cavity resonator by applying the basic coaxial transmission-line theory directly when the length of the resonator is less than 10 mm, and adding the correction factor of 0.5 GHz to the calculated resonant frequency in case of more than 10 mm of the length of the resonator.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1263-1269
• /
• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.