• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.439-443
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• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• 전기의세계
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• v.36 no.1
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• pp.6-13
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• 1987

본고에서는 초전형적외선센서(pyroelectric infrared sensor)를 이용한 적외선검출기에 대하여 주로 언급하고 그 응용분야에 대하여 논하였다.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.759-761
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• 1992

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3+MnO_2(0.18mol%)$, NiO(0.15mol%) temary compound ceramics won fabricated by the mixed-oxide method. Noise properties of the pyroelectric infrared sensor were investigated with particle size of the raw materials and gain size of the specimens. Particle size were decreased and sintered density, voltage resposivity were increased with increasing the ball-mill times. The specimen ball-milled for a 80[hr] showed a good pop-corn noise properties.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.9
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• pp.905-911
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• 2006

Smart homes are expected to offer various intelligent services by recognizing the residents' life pattern, health, and feeling. One of the key issues for realizing the smart home is how to detect the locations of residents. Currently, the research effort is focused on two approaches: terminal-based and non-terminal-based method. The terminal-based method employs a type of device that should be carried by the resident while the non-terminal-based method has no such device. This paper presents a novel non-terminal-based approach using an array of pyroelectric infrared sensors (PIRs) that can detect residents. The feasibility of the system is evaluated experimentally on a test bed.

• Polymer(Korea)
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• v.35 no.5
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• pp.375-377
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• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.109-116
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• 2016

Sensing module of standing and moving human body using shutter method was developed. The module consists of Fresnel lens, pyroelectric infrared (PIR) sensor, interface circuit of the PIR, micro control unit(MCU), and alarm light emitting diode(LED). The principle for standing human body is chopping the thermal of human body using camera shutter. The human sensing signal in MCU by algorithm of interrupt function is detected. By unifying an apparatus and print circuit board(PCB), the developed module can be replaced as commercial moving human body detector. Experiment results show that sensing distance is about 7.0m and sensing angles is about $110^{\circ}$ at room temperature. In these condition, sending ratio was 100% and the power dissipation of the module was 100mW.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.53-54
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• 2007

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.147-150
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• 2006

The thin film of PbTiO3 is fabricated at substrate temperature of 100-150$^{\circ}C$. The infrared spectrum of the ferroelectric thin film is measured as temperature of thermal treatment, 400 - 550$^{\circ}C$. According to infrared spectrum analysis, there are absorption bands at a nearby wave number of 1000 $\sim$ 400 cm-l and the thin film treated by temperature of 550$^{\circ}C$ has absorption bands of wave number 500 cm-l similar to infrared response property of PbTiO3 powder. The pyroelectric infrared detector is fabricated after deposition of Pt and PbTiO3 thin film on Si wafer by sputtering machine. The measured remnant polarization are 11.5-12.5$\muC/cm2$, breakdown electric field Ec is 100-120KV/cm, and voltage responsivity and detectivity is -280V/W, -108cm Hz/W.