• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.439-443
• /
• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• 전기의세계
• /
• 제36권1호
• /
• pp.6-13
• /
• 1987

본고에서는 초전형적외선센서(pyroelectric infrared sensor)를 이용한 적외선검출기에 대하여 주로 언급하고 그 응용분야에 대하여 논하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1992년도 하계학술대회 논문집 B
• /
• pp.759-761
• /
• 1992

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3+MnO_2(0.18mol%)$, NiO(0.15mol%) temary compound ceramics won fabricated by the mixed-oxide method. Noise properties of the pyroelectric infrared sensor were investigated with particle size of the raw materials and gain size of the specimens. Particle size were decreased and sintered density, voltage resposivity were increased with increasing the ball-mill times. The specimen ball-milled for a 80[hr] showed a good pop-corn noise properties.

• 제어로봇시스템학회논문지
• /
• 제12권9호
• /
• pp.905-911
• /
• 2006

Smart homes are expected to offer various intelligent services by recognizing the residents' life pattern, health, and feeling. One of the key issues for realizing the smart home is how to detect the locations of residents. Currently, the research effort is focused on two approaches: terminal-based and non-terminal-based method. The terminal-based method employs a type of device that should be carried by the resident while the non-terminal-based method has no such device. This paper presents a novel non-terminal-based approach using an array of pyroelectric infrared sensors (PIRs) that can detect residents. The feasibility of the system is evaluated experimentally on a test bed.

• 폴리머
• /
• 제35권5호
• /
• pp.375-377
• /
• 2011

두 단계 스핀 코팅 방법을 사용하여 세라믹 체적 분율 0.10과 0.13의 $PbTiO_3$/P(VDF/TrFE) 0~3형 복합재료를 제작하고 분석하였다. 0~3형 $PbTiO_3$/P(VDF/TrFE) 복합재료를 SEM 전자현미경 사진으로 성공적으로 확인할 수 있었다. 이러한 전자현미경 사진을 통하여 복합재료의 0~3형 구조를 재확인하였다. 0~3형 $PbTiO_3$/P(VDF/TrFE) 복합재료는 P(VDF/TrFE) 공중합체보다 센서용 전기적 특성이 우수함을 나타내었다. 그러므로 이러한 낮은 유전상수와 높은 초전계수를 나타내는 0~3형 $PbTiO_3$/P(VDF/TrFE) 복합재료는 더 높은 성능을 나타낼 수 있는 새로운 초전형 센서 재료로 사용될 수 있다.

• 전자공학회논문지
• /
• 제53권2호
• /
• pp.109-116
• /
• 2016

셔터방식의 쵸퍼를 이용한 정지 및 이동인체 감지 모듈을 개발하였다. 감지 모듈은 프레넬 렌즈(Fresnel lens), 초전형적외선(pyroelectric infrared : PIR) 센서, 센서 인터페이스 회로, MCU(micro control unit) 그리고 경보 LED(light emitting diode)로 구성된다. 정지 인체 감지 원리는 PIR 센서에서 나오는 신호를 카메라 셔터를 이용하여 인체의 열을 쵸핑하여 감지하는 방식이다. MCU에서 인터럽트 함수를 제어하는 알고리즘을 통해 정지 및 이동 인체 신호를 감지하게 하였다. 개발한 감지 모듈은 기구부와 PCB(print circuit board)를 일체화함으로써 종래의 상용화되고 있는 이동인체 감지 모듈을 대체 가능하다. 실내 상온에서의 실험 결과, 감지거리는 약 7.0m, 감지각도는 $110^{\circ}$로 측정되었다. 이런 조건에서 감지률은 100%이였고 모듈의 소비 전력는 100mW이였다.

• 대한전기학회논문지
• /
• 제41권6호
• /
• pp.652-660
• /
• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Journal of Electrical Engineering and information Science
• /
• 제3권2호
• /
• pp.239-244
• /
• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2007년도 추계학술대회 논문집
• /
• pp.53-54
• /
• 2007

• Journal of information and communication convergence engineering
• /
• 제4권4호
• /
• pp.147-150
• /
• 2006

The thin film of PbTiO3 is fabricated at substrate temperature of 100-150$^{\circ}C$. The infrared spectrum of the ferroelectric thin film is measured as temperature of thermal treatment, 400 - 550$^{\circ}C$. According to infrared spectrum analysis, there are absorption bands at a nearby wave number of 1000 $\sim$ 400 cm-l and the thin film treated by temperature of 550$^{\circ}C$ has absorption bands of wave number 500 cm-l similar to infrared response property of PbTiO3 powder. The pyroelectric infrared detector is fabricated after deposition of Pt and PbTiO3 thin film on Si wafer by sputtering machine. The measured remnant polarization are 11.5-12.5$\muC/cm2$, breakdown electric field Ec is 100-120KV/cm, and voltage responsivity and detectivity is -280V/W, -108cm Hz/W.