• Smart Structures and Systems
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• v.32 no.3
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• pp.135-151
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• 2023

Using 3D asphalt pavement surface data, a deep and multiscale network named CrackNet-M is proposed in this paper for pixel-level crack detection for improvements in both accuracy and robustness. The CrackNet-M consists of four function-specific architectural modules: a central branch net (CBN), a crack map enhancement (CME) module, three pooling feature pyramids (PFP), and an output layer. The CBN maintains crack boundaries using no pooling reductions throughout all convolutional layers. The CME applies a pooling layer to enhance potential thin cracks for better continuity, consuming no data loss and attenuation when working jointly with CBN. The PFP modules implement direct down-sampling and pyramidal up-sampling with multiscale contexts specifically for the detection of thick cracks and exclusion of non-crack patterns. Finally, the output layer is optimized with a skip layer supervision technique proposed to further improve the network performance. Compared with traditional supervisions, the skip layer supervision brings about not only significant performance gains with respect to both accuracy and robustness but a faster convergence rate. CrackNet-M was trained on a total of 2,500 pixel-wise annotated 3D pavement images and finely scaled with another 200 images with full considerations on accuracy and efficiency. CrackNet-M can potentially achieve crack detection in real-time with a processing speed of 40 ms/image. The experimental results on 500 testing images demonstrate that CrackNet-M can effectively detect both thick and thin cracks from various pavement surfaces with a high level of Precision (94.28%), Recall (93.89%), and F-measure (94.04%). In addition, the proposed CrackNet-M compares favorably to other well-developed networks with respect to the detection of thin cracks as well as the removal of shoulder drop-offs.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.4
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• pp.347-353
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• 2002

A structure of a glass electrode-type pH sensor for measuring any concentration of $H^+$ in an aqueous solution was embodied with bulk micromachining technology. Two open well structures were formed, and a reference electrode was secured by the Ag/AgCl thin film in the sloped side of the etched structure. A sensitive membrane of an indicator electrode for generating a potential by an exchange reaction to $H^+$ was made with a glass containing Na 20% or more finely so that its thickness might be $100{\mu}m$ or so, and then it was bonded to one pyramidal structure. A liquid junction for a current path was formed by filling an agar in the anisotropically etched part of the Si wafer, which had a size of $50{\mu}m{\times}50{\mu}m$, and then bonded it to the other. After complete fabrication of each part, it was filled with a 2M KCl reference solution and encapsulated the sensor structure with a cold expoxy. The potential value of fabricated pH sensor was about 90mV/pH in the standard pH solutions.

• Bulletin of the Korean Chemical Society
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• v.26 no.12
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• pp.1946-1952
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• 2005

New group 15 organometallic compounds, M$(phenanthrenyl)_3$ (M = P (1), Sb (2), Bi (3)) have been prepared from the reactions of 9-phenanthrenyllithium with $MCl_3$. A reaction of 9-(diphenylphosphino)phenanthrene with 2,6-diisopropylphenyl azide led to the formation of (phenanthrenyl)${(Ph)}_2P$=N-(2,6-$^iPr_2C_6H_3$) (4). The crystal structures of 2 and 4 have been determined by single-crystal X-ray diffractions, both of which crystallize with two independent molecules in the asymmetric unit. Compound 2 shows a trigonal pyramidal geometry around the Sb atom with three phenanthrenyl groups being located in a screw-like fashion with an approximately $C_3$ symmetry. A significant amount of CH- -$\pi$ interaction exists between two independent molecules of 4. The phosphorus center possesses a distorted tetrahedral environment with P-N bond lengths of 1.557(3)$\AA$ (P(1) N) and 1.532(3)$\AA$ (P(2)-N), respectively, which are short enough to support a double bond character. One of the most intriguing structural features of 4 is an unusually diminished bond angle of C-N-P, attributable to the hydrogen bonding of N(1)-H(5A) [ca. 2.49$\AA$ between two adjacent molecules in crystal packing. The compounds 1-3 show purple emission both in solution and as films at room temperature with emission maxima ($\lambda_{max}$) at 349, 366, and 386 nm, respectively, attributable to the ligand centered $\pi$ $\rightarrow$ $\pi^\ast$ transition in phenanthrene contributed by the lone pair electrons of the Gp 15 elements. Yet the nature of luminescence observed with 4 differs in that it originates from $\pi$ (diisopropylbenzene)-$\pi^\ast$ (phenanthrene) transitions with the $\rho\pi$contribution from the nitrogen atom. The emission maximum of 4 is red-shifted ranging 350-450 nm due to the internal charge transfer from the phenanthrenyl ring to the N-arylamine group as deduced from the ab initio calculations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.