• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.8-17
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• 1992

In this paper a push-push oscillator using DR (dielectric resonator) at K-band is designed and constructed. Two identical oscillators are arranged in a push-push configuration that has the frequency of oscillator that is twice frequency each oscillator. A dielectric resonator is placed at the input of an active two-port device(FET) yielding a stable frequency source. The oscillators realized with this technique exhibit excellent spectral purity and cancellation of fundamental frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1170-1175
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• 2003

In this paper, the output power improvement of Push-Push FET DRO by adding the identical DR at the drain port as one used in the gate port, has been theoretically investigated. The investigation shows that the DR located between two microstrip lines locks the phase difference of two FET's outputs at 180 degree and improves the output power of Push-Push FET DRO. Since this effect can be used for correcting the impedance difference between two FETs output circuits and the electrical length error of the power combiner at the output circuit of Push-Push DRO, which may occur when fabricate the oscillator, the oscillator with an additional DR can be useful structure for fabricating oscillator.

• 한국ITS학회:학술대회논문집
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• 2004.11a
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• pp.228-230
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• 2004

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.385-388
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• 2000

In this paper, the Ka-band Dielectric resonator oscillator has been designed and fabricated. The resonator network was simulated using HFSS program. The design method of an oscillator is the small-signal S-parameter design. The Push-push DRO employs a hetero junction FET (NE32484A). The fabricated Push-push DRO shows such characteristics as the phase noise -106 ㏈c/Hz at the 100 ㎑ frequency offset. the output power and fundamental frequency surpression were -6 ㏈m and -29 ㏈c, respectively.

• Journal of information and communication convergence engineering
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• v.13 no.2
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• pp.139-143
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• 2015

A push-push voltage controlled dielectric resonator oscillator (VCDRO) with a modified frequency tuning structure using broadside couplers is investigated. The push-push VCDRO designed at 16 GHz is manufactured using a low temperature co-fired ceramic (LTCC) technology to reduce the circuit size. The frequency tuning structure using a broadside coupler is embedded in a layer of the A6 substrate by using the LTCC process. Experimental results show that the fundamental and third harmonics are suppressed above 15 dBc and 30 dBc, respectively, and the phase noise of push-push VCDRO is -97.5 dBc/Hz at an offset frequency of 100 kHz from the carrier. The proposed frequency tuning structure has a tuning range of 4.46 MHz over a control voltage of 1-11 V. This push-push VCDRO has a miniature size of 15 mm×15 mm. The proposed design and fabrication techniques for a push-push oscillator seem to be applicable in many space and commercial VCDRO products.

• Journal of IKEEE
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• v.16 no.2
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• pp.121-126
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• 2012

In this paper, a push-push VCDRO (Voltage Controlled Dielectric Resonator Oscillator) with a modified frequency tuning structure is investigated. The push-push VCDRO designed at 16GHz is manufactured using a LTCC (Low Temperature Co-fired Ceramic) technology to reduce the circuit size. The frequency tuning structure is embedded in intermediate layer of A6 substrate by an advantage of LTCC process. Experimental results show that the fundamental frequency suppression is above 30dBc, the frequency tuning range is 0.43MHz over control voltage of 0 to 12V, and phase noise of push-push VCDRO presents a good performance of -103dBc/Hz at 100KHz offset frequency from carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.241-247
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• 2007

This paper introduces a new type push-push harmonic dielectric resonator oscillator. Proposed oscillators are utilized by HDRO(Harmonic Dielectric Resonator Oscillator) which are combined in push-push structure. As a result, fundamental signal suppression ratio and output power of harmonic signal has been improved. The increase of phase noise is compensated by improving coupling characteristic between resonator and parallel microstrip line. The proposed push-push HDRO shows the output power of 9.32 dBm, the fundamental signal suppression of -47.2 dBc and phase noise of -99.86 dBc at 100 kHz offset frequency and 18.7 GHz center frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.541-546
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• 2010

The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.100-103
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• 2003

A Ku-band Push-push VCO for low cost applications is proposed. The proposed push-push oscillator achieves a wide tuning range in Ku-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning range of 900MHz, fundamental suppression of -30dBc and good phase noise of -115dBc@1MHz offset.