• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.220-221
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• 2000

본 연구에서 목표로 하는 집속광학계는 레이저 다이오드의 emitting area가 50$mu extrm{m}$$\times$1.0$\mu\textrm{m}$ 이고 pumping 매질인 crystal의 TE $M_{00}$ mode 발생을 위한 최소 입사빔의 단면도가 단축과 장축의 직경이 각각 206$\mu\textrm{m}$, 204$\mu\textrm{m}$인 타원이어야 하기 때문에 수직 방향으로는 200배 수평 방향으로는 4배의 확대를 할 수 있는 광학계 이어야 한다. 일반적으로 레이저 다이오드용 집속광학계는 레이저다이오드의 수직 수평 emitting area가 다르기 때문에 실린더형, 원통형 또는 toroidal형의 렌즈를 조합하여 구성한다. 그러나 우리의 경우는 emitting area의 수직 수평비 즉 집속광학계의 수직 수평의 굴절능( power )의 비가 50:1 이어야 하기 때문에 그림1과 같은 일반적인 실린더형, 원통형 또는 toroidal형의 렌즈의 조합으로 집속광학계를 구성하기에는, 렌즈 power비를 50:1로 하기 위해 필요로 하는 공간이( 첫번 렌즈와 마지막 렌즈까지의 거리 ) 커지는 점, 필요로 하는 렌즈의 매수가 많아지는 점, 집속 beam의 형상 즉 단면의 이심률이 커져서 pumping에 비효율적이라는 점 등에서, 부적절하다. (중략)략)

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.95-97
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• 1995

A superconducting current generator, or a superconducting rectifier(SCR) is used as a current source to energize a superconducting magnets in SMES, MRI. We selected a full-wave SCR among various SCR models and analyzed its operational characteristics by computer simulation. In process of pumping the current, the improvement of performance is dependent on how much bigger the open resistance of the switch is in comparison to load coil impedance when one of two switches become active. Faster transfer can he seen in resistive commutation mode by shortening the time elapsed for the resistance to arrive at certain level from zero state. Although recovery time for the switch has no direct effect on current pumping, optimal switch design is needed to increasing operational frequency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.852-855
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• 2012

A DC-DC converter for EEPROM IPs which perfom erasing by the FN (Fowler-Nordheim) tunneling and programming by the band-to-band tunneling is designed in this paper. For the DC-DC converter for EEPROM IPs using a low voltage of $1.5V{\pm}10%$ as the logic voltage, a scheme of using VRD (Read Voltage) instead of VDD is proposed to reduce the pumping stages and pumping capacitances of its charge pump circuit. VRD ($=3.1V{\pm}0.1V$) is a regulated voltage by a voltage regulator using an external voltage of 5V. The designed DC-DC converter outputs VPP (=8V) and VNN (=-8V) in the write mode.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.52-57
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• 1997

We report an investigation of the statistical fluctuations of the two-mode laser output as the asymmetry parameter is varied. The above results relate to computer solutions of the coupled Langevin equations both with and without pumping fluctuations. We find that as the asymmetry parameter is changed positively, the mean intensity of one mode is increased because the normalized intensity auto-correlation is decreased so that the natural dwell time is lengthen. The laser output does respond to a sinusoidally injected asymmetry parameter for small pump parameter.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1018-1020
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• 2002

For the life extension of the aged pumped storage power plant, the static digital excitation system had been developed by KEPRI(Korea Electric Power Research Institute). This paper will discuss the control design conception of pumping mode and the application results of system.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1301_1302
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• 2009

Recently, there has been increased incessantly an interest in research area on micro-fluidic pump for electronic and biological applications. The proposed pump takes an unobtrusive operation into the simple displacing mechanism using peristaltic traveling waves without the physical moving valves. And, this piezopump makes up a panel type design. The ATILA simulation was performed to estimate the operating frequency of the vibrating wave mode, to optimize the design conditions of piezopump such as structure, elastic body material, piezoelectric ceramics, and to analyze the distribution of vibration displacement. The best measured value of the pumping rate is about $118{\mu}l$/min under the following parameters : 4-wave mode, 50kHz operating frequency, $200V_p$.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.316-320
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• 2009

A novel broadband wavelength-swept Raman laser was used to implement Fourier-domain mode locked (FDML) swept-source optical coherence tomography (SS-OCT). Instead of a conventional semiconductor optical amplifier, this study used broadband optical fiber Raman amplification, over 50 nm centered around 1545 nm, using a multi-wavelength optical pumping scheme, which was implemented with the four laser diodes at the center wavelengths of 1425, 1435, 1455 and 1465 nm, respectively, and the maximum operating power of 150 mW each. The operating swept frequency of the laser was determined to 16.7 kHz from the FDML condition of 12 km optical fiber in the ring cavity. The OCT images were obtained using the novel broadband wavelengthswept Raman laser source.

• Journal of the Optical Society of Korea
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• v.4 no.1
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• pp.11-13
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• 2000

We experimentally measured the cold cavity loss of a mode-locked erbium-doped fiber ring laser in situ by using the relaxation oscillation frequency method. The relaxation oscillation frequency is measured for various pumping powers and the data is fitted by the least squares method with a theoretical curve of parameters including the cavity loss. We obtained a cavity loss of 15.3$\pm$0.5 dB which was found to agree with the results of direct transmission loss measurements.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.