• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2002.02a
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• pp.479-485
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• 2002

본 연구는 초음파를 이용하여 한우도체의 연도를 비파괴적이며 객관적으로 측정할 수 있는 시스템을 개발하기 위해서 수행되었다. 한우도체 연도 측정 시스템은 크게 초음파 측정장치, 자동 탐촉자 수직이동장치, 데이터 획득 및 분석장치로 구성되었는데 초음파 측정장치는 초음파 pulser/receiver 및 탐촉자, 자동 탐촉자 이동장치는 상하운동부, 구동부, 제어부, 데이터 획득 및 분석장치는 digitizer, Labview 5.1을 사용하여 구성되었다. 통합된 시스템을 이용하여 획득된 도체의 초음파 신호를 분석하기 위해 1.0~1.1 MHz의 bandpass filtering을 거쳐 hilbert 변환을 이용, envelope를 구할 수 있었으며 탐촉자와 도체의 최적 접촉 위치를 결정하기 위하여 3단계로 나누어 신호분석을 실시하였다. 시료의 개수는 40개였으며 획득된 envelope를 FFT 변환 후 PLS, PCR 분석을 수행한 결과 7단계의 PCR 분석에서 $R^2$= 0.6474의 유의성 있는 결과를 나타내었으므로 최적 접촉 위치로 결정하였다. 최적 접촉 위치를 통해 시료 80개의 추가 실험을 실시한 결과 PCR 분석에서 $R^2$= 0.4304의 결과를 나타내었으며 이를 이용, 도체의 연도를 측정하는 프로그램을 개발하고 최종 통합 시스템을 구축하였다. 본 한우도체 연도 측정 시스템의 개발을 통해 한우도체의 전단력을 예측하여 연도를 객관적으로 판정 가능할 것으로 생각되며 또한 사이즈의 확대로 도축장에 설치하는 설비로서 가능할 것이라 사료된다. 그러나 추후 좀 더 세밀한 측정과 결과의 보완을 위한 분석방법의 개선에 관한 연구가 진행되어야 할 것이다. 사용해 설계된 장치를 사용자가 쉽게 제작할 수 있도록 하였다. 공정설계프로그램을 통해 설계된 공정은 데이터베이스에 저장이 되며 장치설계프로그램에서 쉽게 이전에 설계했던 공정을 이용할 수 있도록 하여 공정 설계와 장치설계를 연계하도록 하였다.동투하시간과 비용 -종자준비부터 통마늘선별까지의 일관기계화로 투입된 주요작업의 노력은 75∼76%가 절감되고, 재배규모 3ha기준시 비용은 44-53%절감되었음. the annealing texture. Observations by TEM and EBSD revealed the formation of very fine grains of ∼1.0$\mu\textrm{m}$ after CCSS.he dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.한 최대의 감자 재배지역을 형성하였다. 제주도는 산지지형과 따뜻한 기온으로 2기작이 가능하고, 감자가공 공장설립과 교통발달에 따른 육지 시장과의 접근이 용이해졌기 때문에 남한에서 2번째로 큰 감자재배지역이 되었다.(요약 및 결론에서 발췌)그람양성균에서 효과적이었으며, 농도별 항균력시험 결과 농도가 증가할수록 비례하여 저해율도 증가함을 알 수 있었다. 첨가농도를 달리하여 미생물의 생육도를 측정한 결과, fraction II磎꼭\ulcorner경우 그람양성균에 대해 500 ppm 이상에서 뚜렷한 증식억제효과를 나타내었다.서 뚜렷한 증식억제효과를 나타내었다.min/+}$계

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.1
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• pp.1-8
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• 2002

The high frequency ultrasonic transducers using polyvinyliden fluoride(PVDF) and polyvinylidene fluoride trifluorethyylene(P(VDF-TrFE)) were developed. The characteristics of fabricated high frequency ultrasonic transducer such as beam diameter, high frequency ultrasonic detection field and amplitude of the first pulse echo signal from the test target in the water were analyzed. The high frequency ultrasonic detection field was affected by the length of coaxial cable between high frequency transducer and ultrasonic pulser/receiver. As the size of the test target increased, the high frequency detection field decreased and the amplitude of a reflection signal increased. The peak amplitude of the first pulse echo signal of P(VDF-TrFE) transducer was higher than that of PVDF transducer. The high frequency ultrasonic detection field of PVDF transducer was wider than that of P(VDF-TrFE) transducer. With C-scan testing, the developed high frequency ultrasonic transducer could detect the 30 to $100{\mu}m$ of hydrogen induced crack of steel specimen by C-scan testing.

• Journal of Chest Surgery
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• v.34 no.9
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• pp.698-703
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• 2001

Background: Endovascular stent-graft insertion in aortic diseases is now generally accepted as an attractive alternative treatment modality. We reviewed our clinical experiences of endovascular stent-graft insertion in thoracic aorta. Material and Method: Since 1995, we performed 8 cases of endovasclar stent-graft insertion. Preoperative diagnoses were aortic aneurysms in 4, traumatic aortic ruptures in 3, and ruptured aortic pseudoaneurysm in 1. All procedures were performed in angiography room with the guidance of fluoroscopy. The stent-graft device is a custom-made 0.35mm thickness Z-shaped stainless steel wires, intertwined with each other using polypropylene suture ligation. It is covered with expanded Dacron vascular graft. Result: All procedures were performed successfully. Follow-up studies revealed 2 minimal perigraft leakages. There was no significant leakage or graft migration. 2 patients expired due to multiple organ failure and fungal sepsis. Other survivors(6) are doing well. Conclusion: Endovascular stent-graft insertion is relatively saft and effective treatment modality in the managment of various types of aortic diseases. In may be an effective alternative in aortic diseases of great surgical risk.

• Korean Journal of Microbiology
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• v.37 no.4
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• pp.284-288
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• 2001

Respiratory viruses are one of the most infectious agent in human. Six different respiratory tract viruses were detected from Busan while working on the preventive surveillance in 1997-2000. The isolation rate from suspected specimens were 8.4%. Influenza virus A, B type, parainfluenza virus, adenovirus, mumps virus, and measles virus were examined from throat swabs, serum, and secretions of patients. Influenza A/Sydney/05/97(H3N2)-like, A/Johanesburg/33/94(H3N2)-like, A/Beijing/262/95(H1N1)-like and Influenza B/Beijing/262/95-like, B/Harbin/07/94-like, B/Guangdong/08/93-like were found. Adenovirus serotype 1, 2, 3 and 5 were detected, antibody of mumps both IgM and IgG were shown and outbreaks of measles were confirmed. Different antigenic types of influenza virus were detected every year, one outbreak of parainfluenza in 1999, mumps outbreak in 1999 and 2000, and incidence of measles in 2000 were noticeable. Monthly outbreaks were November through following March with influenza virus, January through June with adenovirus, February through May and December with mumps, April through August and November, December with measles, respectively. The size of isolated viruses were 130 nm with influenza virus B type, non-enveloped, icosahedron with 70 nm with adenovirus, 170 nm with mumps virus and 180 nm with parainfluenza virus in diameter, respectively.