• 제목/요약/키워드: Pulsed Power

검색결과 588건 처리시간 0.031초

유전체장벽방전 플라즈마 장치의 조작특성과 살균력 (Operational Properties and Microbial Inactivation Performance of Dielectric Barrier Discharge Plasma Treatment System)

  • 목철균;이태훈
    • 산업식품공학
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    • 제15권4호
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    • pp.398-403
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    • 2011
  • 비열살균기술로서 저온플라즈마 활용 가능성을 탐색하고자 유전체장벽 방전 플라즈마(DBDP)생성장치를 제작하여 최적 플라즈마생성 조건을 도출하고 Staphyloocus aureus를 대상으로 살균성능을 조사하였다. DBDP생성장치는 전력공급장치, 변압기, 전극, 시료처리부 등 네 부분으로 구성하였다. 인가전압은 단상 200 V AC를 사용하고, 변압기를 통하여 10.0-50.0 kV로 변환하고 10.0-50.0 kHz의 주파수의 펄스 구형파를 유전체인 세라믹 블록 내에 장치한 전극에 투입함으로써 상압에서 플라즈마를 생성하였다. 주파수를 올림에 따라 높은 전류가 유입되었고, 이에 비례하여 전력소비량이 증가하였다. 전류세기 1.0-2.0 A, 주파수32.0-35.3 kHz 범위에서 균일하고 안정적인 플라즈마 발생이 이루어졌으며 시료를 투입하지 않은 상태에서의 최적 전극간격은 1.85 mm 이었다. 전극간격을 높임에 따라 소비전력이 증가하였으나 시료 처리에 적합한 전극간격은 2.65 mm였다. DBDP 처리에 의한 온도상승은 최대 20$^{\circ}C$에 불과하여 열에 의한 생물학적 효과는 무시할 수 있었으며 따라서 비열기술임이 확인되었다. Staphyloocus aureus를 대상으로 DBDP 처리할 경우 초기 5분 동안은 살균치가 직선적인 증가를 보이다가 이후 다소 완만해지는 경향을 보였으며 1.25 A에서 10분간 처리 시 살균치는 5.0을 상회하였다.

순산소 연소 배출 입자 제거용 건식 전기집진장치 운전 특성 (Operational Characteristics of a Dry Electrostatic Precipitator for Removal of Particles from Oxy Fuel Combustion)

  • 김학준;한방우;오원석;황규동;김용진;홍정희
    • 대한기계학회논문집B
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    • 제34권1호
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    • pp.27-34
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    • 2010
  • 본 연구에서는 순환방식의 1000 CMH급 전기집진장치 성능평가 시스템 구축하여, 대용량 순산소 연소 장치 없이 순산소 연소가스 모사 조건(고농도 $CO_2$ 조건)에서 엣지-평판형 전기집진장치를 방전극 형상, 집진판 간격, 유입속도, 가스조성 및 분진 입경에 따라 성능을 평가하였다. $CO_2$ 70% 조건에서 3 종 방전극에 대해 성능 비교를 한 결과, 방전극 편 면적이 넓은 방전극이 상대적으로 높은 포집효율을 나타내었다. 또한 유입속도가 감소할수록, 분진 입경이 증가할수록, 집진판 간격이 좁을수록 분진 집진 효율이 증가하였으나, $CO_2$ 농도가 증가할수록 효율이 감소하였다. 그러므로 $CO_2$ 농도가 높을 것으로 예상되는 순산소 연소 등 배기가스 조건에 적용되는 전기집진장치를 설계할 경우, 기존과 동일한 단위 가스 체적 당 코로나 전력 조건에서 집진장치 내부 유속을 줄이거나 집진판 간격을 좁히는 설계변화가 요구되며, 방전극의 경우 방전편 면적이 넓으면서 코로나 전류가 높은 방전극이 적용되야 할 것으로 판단된다.

DIAGNOSTICS OF PLASMA INDUCED IN Nd:YAG LASER WELDING OF ALUMINUM ALLOY

  • Kim, Jong-Do;Lee, Myeong-Hoon;Kim, Young-Sik;Seiji Katayama;Akira Matsunawa
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.612-619
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    • 2002
  • The dynamic behavior of Al-Mg alloys plasma was very unstable and this instability was closely related to the unstable motion of keyhole during laser irradiation. The keyhole fluctuated both in size and shape and its fluctuation period was about 440 ${\mu}{\textrm}{m}$. This instability has been estimated to be caused by the evaporation phenomena of metals with different boiling point and latent heats of vaporization. Therefore, the authors have conducted the spectroscopic diagnostics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AIH. It was confirmed that the resonant lines of Al and Mg were strongly self-absorbed, in particular in the vicinity of pool surface. The self-absorption of atomic Mg line was more eminent in alloys containing higher Mg. These facts showed that the laser-induced plasma was relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO were different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectra were predominant in intensity, while the AlO spectra became much stronger in higher power density. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra was detected clearly. The hydrogen source was presumably the hydrogen solved in the base Metal, absorbed water on the surface oxide layer or H$_2$ and $H_2O$ in the shielding gas. The temporal change in spectral line intensities was quite similar to the fluctuation of keyhole. The time average plasma temperature at 1 mm high above the surface of A5083 alloy was determined by the Boltzmann plot method of atomic Cr lines of different excitation energy. The obtained electron temperature was 3, 280$\pm$150 K which was about 500 K higher than the boiling point of pure aluminum. The electron number density was determined by measuring the relative intensities of the spectra1lines of atomic and singly ionized Magnesium, and the obtained value was 1.85 x 1019 1/㎥.

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$CeO_2$의 상전이에 따른 YBCO 박막의 결정성 및 특성의 변화 (Change of crystallization and properties of YBCO thin film by phase transition of $CeO_2$)

  • 김성민;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1590-1592
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    • 1999
  • We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

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S 대역 Diplexer에 대한 Multipactor 민감도 시험 (Experimental Verification of Multipactor Sensitivity for S-band Diplexer)

  • 최승운;김대영;권기호;이윤기
    • 항공우주기술
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    • 제6권1호
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    • pp.83-91
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    • 2007
  • 위성용 RF 수동 소자에 대한 MP(multipactor) 현상과 그 검출 방법에 대한 연구를 수행하였으며, 본 연구에 사용된 RF 수동 소자는 S 대역 diplexer로, 이는 인터디지털 타입의 5단 chebyshev 응답특성을 갖는 두개의 대역통과필터로 구성되며 2.232 및 2.055 GHz 대역에서 2.7 %의 대역폭을 갖는 구조로 각각 설계되었다. MP 민감도 해석을 위해 diplexer에 대하여 3D 전자기 모델링을 수행하였으며, 이를 통하여 diplexer 구조적으로 multipactor에 대하여 가장 민감한 부분을 정의 하였고 이때의 MP 방전 현상이 나타나지 않는 최대 RF 입력전력을 규명하였다. 또한 KARI 자체 개발한 MP 민감도 시험 시설을 이용하여 QM용 diplexer에 대한 시험을 수행하였으며, 그 결과 CW 모드에서 43 dBm, 펄스 모드 시험에서 44 dBm의 RF 입력 전력에서 MP가 발생됨을 확인 하였다.

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펨토초 레이저의 이송속도에 따른 Invar 합금의 어블레이션 특성 (Characteristics of the Femto-second Pulsed Laser Ablation according to Feed Velocity on the Invar Alloy)

  • 정일영;강경호;김재도;손익부;노영철;이종민
    • 한국정밀공학회지
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    • 제26권3호
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    • pp.25-31
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    • 2009
  • Femto-second laser ablation with the various feed velocities of the Invar alloy and the micro surface milling for the processing condition were studied. We used a regenerative amplified Ti:sapphire laser with a 1kHz repetition rate, 184fs pulse duration time and 785nm wavelength. Femto-second laser pulse was irradiated on the Invar alloy with the air blowing at the condition of various laser peak powers and feed velocities. An ablation characteristic according to feed velocity of the Invar alloy was appeared as the non-linear type at different zone of energy fluence. The micro surface milling of the Invar alloy using a mapping method was investigated. The optimal condition of micro surface milling was laser peak power of 22.8mW, feed velocity of 1 mm/s, beam gap of $1{\mu}m$. With the optimal processing condition, the fine rectangular shape without burr and thermal damage was achieved. Using the femto-second laser system, it demonstrates excellent tool for micro surface milling of the Invar alloy without heat effects and poor edge.

High-Efficiency a-Si:H Solar Cell Using In-Situ Plasma Treatment

  • Han, Seung Hee;Moon, Sun-Woo;Kim, Kyunghun;Kim, Sung Min;Jang, Jinhyeok;Lee, Seungmin;Kim, Jungsu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.230-230
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    • 2013
  • In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

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The New LM-PCR/Shifter Method for the Genotyping of Microorganisms Based on the Use of a Class IIS Restriction Enzyme and Ligation-Mediated PCR

  • Krawczyk, Beata;Leibner-Ciszak, Justyna;Stojowska, Karolina;Kur, Jozef
    • Journal of Microbiology and Biotechnology
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    • 제21권12호
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    • pp.1336-1344
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    • 2011
  • This study details and examines a novel ligation-mediated polymerase chain reaction (LM-PCR) method. Named the LM-PCR/Shifter, it relies on the use of a Class IIS restriction enzyme giving restriction fragments with different 4-base, 5' overhangs, this being the Shifter, and the ligation of appropriate oligonucleotide adapters. A sequence of 4-base, 5' overhangs of the adapter and a 4-base sequence of the 3' end of the primer(s) determine a subset of the genomic restriction fragments, which are amplified by PCR. The method permits the differentiation of bacterial species strains on the basis of the different DNA band patterns obtained after electrophoresis in polyacrylamide gels stained with ethidium bromide and visualized in UV light. The usefulness of the LM-PCR/Shifter method for genotyping is analyzed by a comparison with the restriction endonuclease analysis of chromosomal DNA by the pulsed-field gel electrophoresis (REA-PFGE) and PCR melting profile (PCR MP) methods for isolates of clinical origin. The clustering of the LM-PCR/Shifter fingerprinting data matched those of the REA-PFGE and PCR MP methods. We found that the LM-PCR/Shifter is rapid, and offers good discriminatory power and excellent reproducibility, making it a method that may be effectively applied in epidemiological studies.

Comparison of PFGE, IS6110-RFLP, and 24-Locus MIRU-VNTR for Molecular Epidemiologic Typing of Mycobacterium tuberculosis Isolates with Known Epidemic Connections

  • Jeon, Semi;Lim, Nara;Park, Sanghee;Park, Misun;Kim, Seonghan
    • Journal of Microbiology and Biotechnology
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    • 제28권2호
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    • pp.338-346
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    • 2018
  • Two molecular epidemiologic methods, IS6110 restriction fragment length polymorphism (IS6110-RFLP) and 24-locus mycobacterial interspersed repetitive unit-variable-number tandem repeat (MIRU-VNTR), are used worldwide in studies of Mycobacterium tuberculosis (MTB). Conversely, because of its poor resolution, pulsed-field gel electrophoresis (PFGE) is not widely used for MTB. In this study, we improved the 24-locus MIRU-VNTR and PFGE protocols and compared the effectiveness of these approaches for the molecular typing of MTB using 75 clinical isolates obtained from a cohort investigation of high-risk populations infected with MTB. The 24-locus MIRU-VNTR method demonstrated superior discriminatory ability, followed by PFGE and IS6110-RFLP. Next, we analyzed six isolates with clear epidemiologic connections; that is, isolates from patients who attended the same school. IS6110-RFLP and PFGE identified these samples as the same type. By contrast, according to MIRU-VNTR, two isolates differed from four other isolates at one locus each; one isolate was identified as Mtub29 and the other as QUB-26. In summary, the 24-locus MIRU-VNTR assay was the most useful molecular typing method among the three methods investigated due to its discriminatory power, short time required, and availability as an epidemiologic investigation tool. PFGE was the second-best method. Compared with the other loci assessed in the 24-locus MIRU-VNTR assay, the Mtub29 and QUB-26 loci appeared to exhibit greater variability during transmission.

Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering

  • Jung, Min J.;Nam, Kyung H.;Han, Jeon G.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2001년도 춘계학술발표회 초록집
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    • pp.14-14
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    • 2001
  • Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

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