• Journal of Magnetics
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• 제21권3호
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• pp.450-459
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• 2016

Experimental results and data of numerical simulations are presented, concerning generation of wideband radio frequency (RF) oscillations in a nonlinear transmission line (NLTL) which contains a pre-magnetized core of ferrite material. Emphasis is made on the means for extracting the RF signal from the line, in order to radiate it into free space. Antennas of two types that can be used for the purpose are considered, both featuring a coaxial design. This permits availing of the principal advantages of coaxial systems, such as operation in the mode of a traveling TEM wave; wide range of the transmitted frequencies, and a reasonably simple design. The antennas studied, specifically a disc-cone dipole (DCD) and an impulse reflector antenna ('Half-IRA', or HIRA type) differ significantly in effective width of the radiated spectrum and in spatial characteristics of the radiated field in far region.

• 전력전자학회논문지
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• 제8권5호
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• pp.389-396
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• 2003

직류진원 장치의 부하에 단락이 발생하는 경우 직류전원을 부하로부터 신속히 차단하고 재인가 가능한 새로운 방식의 ac/dc 컨버터를 제안하였다. 제안한 방식의 컨버터 출력전윈은 부하단락시 차단 및 정상상태로 회복시 직류전원을 재인가하여 정격출력전압으로 확립되는데 소요되는 시간이 각각 수백 $\mu\textrm{s}$ 이내에 이루어지는 특징이 있다. 또한 컨버터 출력필터 커패시터는 부하가 단락된 상태에서도 방전하지 않고 거의 정격출력전압을 유지할 수 있으므로 직류전원을 단락상태가 소멸된 정상부하에 재인가시 전압의 오버슈트 없이 신속한 부하전압 확립이 가능하다. 제안한 방식의 컨버터는 기존 방식에 비해 구조가 간단하고 소형경량화 가능한 장점이 있다. 제안한 회로방식에 대한 동작원리 설명 및 특성해석을 하였으며 실험을 통하여 그 유용성을 입증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.285-288
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• 1996

The electronic operation of the gas discharge tube is controlled by the electrical energy as sinusoidal waveform in arbitrary frequency range, or as a sequence of pulses at a wide range of duty cycle, the gas composition, the kind of electrode and the vessel geometry. In this paper, the pulsed mode operated gas discharge tube is composed with mixed gas of IIg-Ne ( 10 Torr ), in the tube of 15.0 mm outer diameter and has variable color from red to blue with changing frequency and pulse width in high voltage. As increasing pulse width and frequency in the gas discharge tube, the phenomenons that the electron temperature in the positive column increases and the radiation from atoms of higher upper state energy levels increases, exist. The color have the locus from red (0.4972, 0.3128) to blue (0.2736, 0.2619) in CIE chromacity diagram with increasing pulse width and frequency. The changing method of pulse width and frequency has been shown to be suitable for the luminous color control.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 대한전자공학회논문지TC
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• 제46권12호
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• pp.14-21
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• 2009

본 논문에서는 7개의 MMIC 전력증폭기 칩과 박막기판을 결합하여 MIC 모듈을 구성함으로써 Ka-대역 중심주파수 영역에서 10 W 이상의 출력전력을 가지는 펄스모드 전력증폭기 모듈을 설계하고 제작하였다. 전력증폭기 모듈의 제작에는 밀리미터파 대역에 적합한 수정된 형태의 윌킨슨 전력분배기/합성기와 모듈의 조림과정에서 공진을 억제하고 작은 삽입손실 특성을 보이는 CBFGCPW-Microstrip 천이구조를 활용하였다. 전력용 MMIC 바이어스 회로에 사용된 큰 값의 바이패스 캐패시터에 의해 발생되는 펄스모드 출력전력의 감소를 개선하고자 TTL 펄스 타이밍 제어 기법을 제안하였다. 제안된 방법을 10 kHz, $5\;{\mu}sec$ 펄스모드로 동작하는 전력증폭기 모듈에 적용한 결과 펄스모드 동작시간을 200 nsec 이상 개선할 수 있었고 0.62 W의 출력전력을 향상시킬 수 있었다. 구현된 전력증폭기 모듈은 59.5 dB의 전력이득과 11.89 W의 출력전력을 보여주었다.

• 한국항공우주학회지
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• 제33권3호
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• pp.93-98
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• 2005

과학기술위성2호는 2007년 12월에 발사될 예정이다. 이 위성의 주관측기는 DREAM으로서, 주요 임무는 지구 또는 대기로부터 발생되는 복사에너지를 라디오파 대역에서 관측하는 것이다. 이 외 과학기술위성2호는 과학기술 실험용기기로서 정밀디지탈 태양센서, 2중헤드 별센서 등이 탑재되며, 과학기술위성2호의 자세제어 및 모멘텀 덤핑용 과학기술실험용 탑재체로서 펄스형 플라즈마 추력기가 실린다. 본 논문에서는 관측기기 및 과학기술실험용 탑재체 등의 운용모드를 고려한 과학기술위성2호의 운용모드에 따른 전력의 수요예측에 대하여 연구하였고, 임무를 수행하는 동안 안정적인 전력을 공급하기위한 필요전력에 대하여 분석하였다.

• Progress in Superconductivity
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• 제5권1호
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• pp.50-54
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• 2003

We have fabricated $∂^2$$B_{z}$ /$∂x^2$ type planar gradiometers and studied their properties in operation under various field conditions. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ (100) substrate by a pulsed laser deposition (PLD) system and patterned into a device by the photolithography with ion milling technique. The device consists of 3 pickup loops designed symmetrically Inner dimension and the width of the square side loops are 3.6 mm and 1.2 mm, respectively, and the corresponding dimensions of the center loop are 2.0 mm and 1.13 mm. The length of baseline gradiometer is 5.8 mm. Step-edge junction width is 3.0 $\mu\textrm{m}$ and the hole size of the SQUID loop is 3 $\mu\textrm{m}$ ${\times}$ 52 $\mu\textrm{m}$. The SQUID inductance is estimated to be 35 pH. The device was formed on a 20 mm ${\times}$ 10 mm substrate. We have tested the behavior of the device in various field conditions. The unshielded gradiometer was stable under extremely hostile conditions on a laboratory bench. Noise level 0.45 pT/$\textrm{cm}^2$/(equation omitted)Hz and 0.84 pT/$\textrm{cm}^2$/(equation omitted)Hz at 1 Hz for the shielded and the unshielded cases, which correspond to equivalent field noises of 150 fT/(equation omitted)Hz and 280 fT/(equation omitted)Hz, respectively. In spite of the short baseline of 5.8 mm, the high common-mode-rejection-ratio of the gradiometer, $10^3$, allowed us to successfully record magnetocardiogram of a human subject, which demonstrates the feasibility of the design in biomagnetic studies.