• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of Biomedical Engineering Research
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• v.7 no.2
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• pp.111-112
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• 1986

Radiation-induced fibrosarcoma tumors were grown on the flanks of C3H mice. The mice were divided into two groups. One group was injected with Photofrin II, intravenously (2.5mg/kg body weight). The other group received no Photofrin II. Mice from both groups were irradialed for approximately 15 minutes at 100, 300, or 500 mW/cm2 with the argon (488nm/514.5 nm), dye(628nm) and gold vapor (pulsed 628 nm) laser light. A photosensitizer behaved as an added absorber. Under our experimental conditions, the presence of Photolfrin II increased surface temperature by at least 40% and the temperature rise due to 300 mW/cm2 irradiation exceeded values for hyperthermia. Light and temperature distributions with depth were estimated by a computer model. The model demonstrated the influence of wavelength on the thermal process and proved to be a valuable tool to investigate internal temperature rise.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of Yeungnam Medical Science
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• v.41 no.4
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• pp.279-287
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• 2024

Atrial fibrillation (AF) is the most common sustained tachyarrhythmia and its increasing prevalence has resulted in a growing health-care burden. A recent landmark randomized trial, the EAST-AFNET 4 (Early Treatment of Atrial Fibrillation for Stroke Prevention Trial), highlighted the importance of early rhythm control in AF, which was previously underemphasized. Rhythm control therapy includes antiarrhythmic drugs, direct-current cardioversion, and catheter ablation. Currently, catheter ablation is indicated for patients with AF who are either refractory or intolerant to antiarrhythmic drugs or who exhibit decreased left ventricular systolic function. Catheter ablation can be categorized according to the energy source used, including radiofrequency ablation (RFA), cryoablation, laser ablation, and the recently emerging pulsed field ablation (PFA). Catheter ablation techniques can also be divided into the point-by-point ablation method, which ablates the pulmonary vein (PV) antrum one point at a time, and the single-shot technique, which uses a spherical catheter to ablate the PV antrum in a single application. PFA is known to be applicable to both point-by-point and single-shot techniques and is expected to be promising owing to its tissue specificity, resulting in less collateral damage than catheter ablation involving thermal energy, such as RFA and cryoablation. In this review, we aimed to outline catheter ablation for rhythm control in AF by reviewing previous studies.

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.3
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• pp.381-390
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• 2004

The purpose of this in vitro study was to investigate the effects of Nd:YAG laser irradiation and fluorides on acid drink demineralized enamel. The materials were 30 freshly extracted permanent premolars with intact smooth enamel surfaces. They were demineralized with Coca-cola at $37^{\circ}C$ for 12hours and then irradiated by Nd:YAG laser with 6W power, $50mJ/cm^2$ energy density, and 20Hz pulse repetition. After laser irradiation, teeth were treated by three kinds of fluorides; (1)0.05% NaF fluoride solution (2)1.23% APF gel and (3)0.1%F fluoride varnish, microhardness(VHN) and Diagnodent scores were measured and the surfaces of each treated specimens were also observed with SEM under 1500 magnification. The results were as follows: 1. In the change of microhardness(VHN), it decreased to 34.68% from the initial micrhardness, increased to 78.37% after laser irradiation and increased to 82.62% after fluoride treatment, there were significant differences except when it was irradiated and treated with fluoride(P<0.05). 2. In the change of Diagnodent scores, it was decreased to 28.08% from the initial scores after demineralization, and then increased to 59.81% after laser irradiation, and increased to 82.17% after fluoride treatment. Scores were different significantly between the scores of initial, demineralization, laser irradiation and fluoride treatment(P<0.05). All the scores were not different significantly between fluoride types. 3. SEM observation showed that the lased enamel surfaces after demineralization were thermally degenerated and showed molten lava-like appearance and crater with cracks and many microholes.

• Nuclear Engineering and Technology
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• v.21 no.4
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• pp.287-293
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• 1989

The purpose of this study was to develop a rapid and effective method of laser-induced fluorescence analysis for thrace amounts of Sm, Eu and Tb in nuclear fuels. The features of the method are the use of the distinct fluorescence wavelengths and the discriminative lifetimes of the respective elements when excited by a pulsed nitrogen laser. Fluorescence signals of the three elements were isolated by adequate selection of the filters or complexing agents (HFA, TTA) or discriminative delay and gate times in the signal processing circuit. It was found that S $m^{+3}$ and E $u^{+3}$ emitted strong fluorescence in the two complexing agent solutions or HFA and TTA. But in the case or T $b^{+3}$, the fluorescence signal was detected only in HFA solution. With respect to the concentrations of S $m^{+3}$, E $u^{+3}$ and T $b^{+3}$, the fluorescence signal intensities gave superior linearities in the range of 5 ppb-10 ppm for S $m^{+3}$, 0.5 ppb-1 ppm for E $u^{+3}$, and 0.1 ppb-300 ppb for T $b^{+3}$, The detection limits obtained were 5 ppb for S $m^{+3}$, 0.1 ppb for E $u^{+3}$, and 0.01 ppb for T $b^{+3}$, respectively.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.10-13
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• 2023

High-T_C superconductivity (HTSC) has been the central issue in the field of condensed matter physics for decades. An essential part of the research on superconductivity is finding new exotic superconductors. It was recently suggested that Ir-substituted La_0.7Sr_0.3MnO₃ (LSMIO) is a new high-T_C superconductor. However, systematic studies to experimentally verify the superconductivity have not been done. Here, we report the growth processes of LSMIO thin films and their electrical transport properties. We observed a clear negative correlation between the intensity of the laser utilized for film deposition and the Curie temperature of the deposited film. We attributed this effect to the suppression of Sr concentration in the LSMIO films as the laser intensity increased. However, our LSMIO films show conventional ferromagnetism instead of HTSC. To realize the HTSC in LSMIO systems, further exploration of diverse compositions of LSMIO compounds is essential.