• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.476-482
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• 2016

Convectional PZT based piezoelectric ceramics have to sinter at high temperature about $1,200^{\circ}C$ for their suitable electrical properties. However, some issues: low temperature sintering piezoelectric ceramic composition and reliable internal electrode, have recently attracted a great deal of interest as a highly efficient multi-layered piezoelectric ceramics. In order to optimize low temperature sintering conditions of thick-film PMN-PZ-PT ceramic, it was investigated sintering and piezoelectric properties according to the change of $LiBiO_2$ contents. Thus, the superior piezoelectric properties were found at the pallet type PMN-PZ-PT optimized with low sintering processing at $925^{\circ}C$ including 7 wt% $LiBiO_2$ sintering aid. Consequentially, we successfully manufactured thick-film PMN-PZ-PT ceramics, which had superior piezoelectric and dielectric properties, with 5 wt% of $LiBiO_2$ sintering aid at temperature of $900^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.2
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• pp.103-108
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• 2006

Microstructural evolution of Pt-aluminide coated Ni-based superalloy has been investigated with ductilization heat treatment. The Pt coat was prepared on the superalloy and then aluminide coating was conducted using a pack cementation process. Samples were heat-treated at $1050^{\circ}C$ for 2 hrs and the microstructure and element analysis were preformed. A various precipitated compounds were observed within the coating layer and the diffusion region in the Pt-aluminide coating and heat treatment, indicating that the bi-phase compounds of $PtAl_2$ and NiAl were performed during the Pt-aluminide coating, whereas $M_{23}C_6$, MC, $Ni_3Al$ and ${\sigma}$ phases were precipitated in the inter-diffusion region. The bi-phase compounds of $PtAl_2$ and NiAl were transformed into the single phase compound of $PtAl_2$ with the heat treatment, increasing the amount of carbide and ${\sigma}$ phase.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Clean Technology
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• v.28 no.4
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• pp.331-338
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• 2022

The objective of this study is to prepare bead-type and pellet-type Pt (1 wt%)/Kieselguhr catalysts as hydrogenation catalysts for the polycyclic aromatic hydrocarbons (PAHs) included in pyrolysis fuel oil (PFO). The optimal reaction temperature to maximize the yield of saturated cyclic hydrocarbons during the PFO-cut hydrogenation reaction in a trickle bed reactor was determined to be 250 ℃. A hydrogen/PFO-cut flow rate ratio of 1800 was found to maximize 1-ring saturated cyclic compounds. The yield of saturated cyclic compound increased as the space velocity (LHSV) of PFO-cut decreased. The difference in hydrogenation reaction performance between the pellet catalyst and the bead catalyst was negligible. However, the catalyst impregnated by Pt after molding the Kieselguhr support (AI catalyst) showed higher hydrogenation activity than the catalyst molded after Pt impregnation on the Kieselguhr powder (BI catalyst), which was a common phenomenon in both the pellet catalysts and bead catalysts. This may be due to a higher number of active sites over the AI catalyst compared to the BI catalyst. It was confirmed that the pellet catalyst prepared by the AI method had the best reaction activity of the prepared catalysts in this study. The majority of the PFO-cut hydrogenation products were cyclic hydrocarbons ranging from C₈ to C₁₅, and C₁₁ cyclic hydrocarbons had the highest distribution. It was confirmed that both a cracking reaction and hydrogenation occurred, which shifted the carbon number distribution towards light hydrocarbons.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.233-239
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• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.