• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2003년도 연료전지심포지움 2003논문집
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• pp.83-88
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• 2003

PtRu alloy and $PtRu-WO_3$ nanocomposite thin-film electrodes for methanol electrooxidation were fabricated by means of a sputtering method. The structural and electrochemical properties of well-defined PtRu alloy thin-film electrodes were characterized using X-ray diffraction, Rutherford backscattering spectroscopy. X-ray photoelectron spectroscopy, and electrochemical measurements. The alloy thin-film electrodes were classified as follows: Pt-based and Ru-based alloy structure. Based on structural and electrochemical understanding of the PtRu alloy thin-film electrodes, the well-controlled physical and (electro)chemical properties of $PtRu-WO_3$, showed superior specific current to that of a nanosized PtRu alloy catalyst, The homogeneous dispersion of alloy catalyst and well-formed nanophase structure would lead to an excellent catalytic electrode reaction for high-performance fuel cells. In addition, the enhanced catalytic activity in nanocomposite electrode was found to be closely related to proton transfer in tungsten oxide using in-situ electrochemical transmittance measurement.

• 한국세라믹학회지
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• 제37권11호
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• pp.1126-1129
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• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• 전기학회논문지P
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• 제52권1호
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.53-59
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• 2003

Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

• 센서학회지
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• 제19권1호
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• pp.58-61
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• 2010

This paper describes the fabrication and characteristics of NO sensor using ZnO thin film by RF magnetron sputter system. The sensitivity, working temperature, and response time of sputtered pure ZnO thin film and added catalysts such as Pt, Pd, Al, Ti on those films were measured and analyzed. The sensitivity of pure ZnO thin film at working temperature of $300^{\circ}C$ is 0.875 in NO gas concentration of 0.046 ppm. At same volume of the gas in chamber, measuring sensitivity of 1.87 at $250^{\circ}C$ was the case of Pt/ZnO thin film. The ZnO thin films added with catalyst materials were showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.889-892
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• 2000

We have investigated the Pt doping effect on structural and electrochemical properties of amorphous vanadium oxide film, grown by radio frequency magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with l0W r.f. power induce more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt increases, large amount of Pt incorporates into amorphous V$_2$O$_{5}$ and makes PtOx microcrystalline phase in amorphous matrix. This result suggests that the semicondcuting PtOx microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibility of vanadium oxide cathode film.de film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.16-16
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• 1996

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• 한국세라믹학회지
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• 제36권4호
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• pp.403-409
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• 1999

RF 마그네트론 스퍼터링방법으로 Pt/Ti/NON/Si 기판 위에 $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) 박막을 증착한 다음 유전 및 초전특성을 살펴보았다. BST 박막을 증착할 때 기판온도를 300~-$600^{\circ}C$로 변화시킨 결과 기판온도가 증가할수록 박막의 결정성과 입도가 증가하여 유전율과 초전계수가 증가하였다. 한편 하부전극인 Pt의 증착조건이 BST 박막의 몰성에 미치는 영향도 살펴보았다. Pt의 증착온도와 Pt의 미세구조와 결정성뿐만 아니라 상부에 형성된 BST 박막의 배향성에도 큰 영향을 미쳤으며, 그 결과 BST의 초전특성에도 큰 영향을 미쳤다. BST 박막과 Pt 하부전극의 증착조건을 적정화함으로써 본 연구에엇는 상온에서 초전계수가 240 $nCcm^{-2}K^{-1}$인 BST 박막을 얻었다.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.