• 제목/요약/키워드: Pt thin-film

검색결과 709건 처리시간 0.072초

Optical study on the morphology of organic molecules in thin solid films

  • Tsuboi, Taiju
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.577-582
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    • 2006

  • Unlike the case of $Ir(ppy)_3$, various aggregates of PtOEP including dimer are formed in PtOEP-doped films and neat film. Such a difference is due to difference of competition among solid state solvation effect, dipole-dipole interactions between dopant molecules, and intermolecular covalent bonding.

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RF 스퍼터링법에 의한 ($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 미세구조 및 유전특성 (Microstructure and Dielectric Properties of ($Sr_{1-x}Ca_x)TiO_3$ Ceramic Thin Film by RF Sputtering Method)

  • 김진사;오재한;이준웅
    • 한국전기전자재료학회논문지
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    • 제11권11호
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    • pp.984-989
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    • 1998

  • The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

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$Ar/O_2$비에 따른 $Sr_{0.7}Bi_{2.3}Nb_2O_9$ 박막의 구조 및 영향 (Structure and Influence of $Sr_{0.7}Bi_{2.3}Nb_2O_9$ Thin Film with $Ar/O_2$ Ratio)

  • 김진사;최운식
    • 반도체디스플레이기술학회지
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    • 제8권2호
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    • pp.11-14
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    • 2009

  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

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강유전체 PZT를 이용한 반도체메모리소자에 관한 연구 (A Study of Semiconductor Memory Device using a Ferroelectric Material PZT)

  • 정세민;박영;최유신;임동건;송준태;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.801-803
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    • 1998

  • We investigated Pt and $RuO_2$ as a bottom electrode and PZT thin film for ferroelectric applications. XRD examination shows that a mixed phase of (111) and (200) Pt peak for the temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for the substrate temperature of $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$, 80 W for the Pt bottom electrode growth. From the study of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with $0{\sim}5%$, a mixed phase of Ru and $RuO_2$ for $10{\sim}40%$, pure $RuO_2$ at 50%. Having optimized the bottom electrode growth conditions, we employed two step process in PZT film capacitor: PZT film growth at the low substrate temperature of $300^{\circ}C$ and then post RTA anneal treatments. PZT films were randomly oriented on $RuO_2$ and (110) preferentially oriented on Pt electrode. Leakage current density of PZT film demonstrated two to three orders higher for $RuO_2$ bottom electrode. From C-V results we observed a dielectric constant of PZT film higher than 1200. This paper presents the optimized process conditions of the bottom electrodes and properties of PZT thin films on these electrodes.

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