• Title/Summary/Keyword: Proton irradiation test

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Experimental investigation on the degradation of SiGe LNAs under different bias conditions induced by 3 MeV proton irradiation

  • Li, Zhuoqi;Liu, Shuhuan;Ren, Xiaotang;Adekoya, Mathew Adefusika;Zhang, Jun;Liu, Shuangying
    • Nuclear Engineering and Technology
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    • v.54 no.2
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    • pp.661-665
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    • 2022
  • The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 1015 protons/cm2. The maximum degradation quantities of the gain S21 and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

Proton induced Effects on Commercial Single-mode Optical Fibers (상용 단일모드 광섬유의 양성자 영향)

  • Kim, Jong-yeol;Kim, Young-woong;Ryu, Guk-been;Hwang, Young-gwan;Lee, Min-Woong;Song, Keun-young
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.623-625
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    • 2022
  • In this paper, the proton induced attenuation characteristics were evaluated for 5 types of commercial single-mode optical fibers using a proton accelerator. The proton beam used in the irradiation test has a high energy of 100 MeV class, and the test was performed by setting the uniformity of the beam irradiation area to 10% or less. According to the type of optical fiber (internal material, impurities), the radiation induced attenuation by the proton irradiation showed a noticeable difference.

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System-on-chip single event effect hardening design and validation using proton irradiation

  • Weitao Yang;Yang Li;Gang Guo;Chaohui He;Longsheng Wu
    • Nuclear Engineering and Technology
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    • v.55 no.3
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    • pp.1015-1020
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    • 2023
  • A multi-layer design is applied to mitigate single event effect (SEE) in a 28 nm System-on-Chip (SoC). It depends on asymmetric multiprocessing (AMP), redundancy and system watchdog. Irradiation tests utilized 70 and 90 MeV proton beams to examine its performance through comparative analysis. Via examining SEEs in on-chip memory (OCM), compared with the trial without applying the multi-layer design, the test results demonstrate that the adopted multi-layer design can effectively mitigate SEEs in the SoC.

Development of proton test logic of RFSoC and Evaluation of SEU measurement (RFSoC의 양성자 시험 로직 개발 및 SEU 측정 평가)

  • Seung-Chan Yun;Juyoung Lee;Hyunchul Kim;Kyungdeok Yu
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.1
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    • pp.97-101
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    • 2024
  • In this paper, we present the implementation of proton beam irradiation test logic and test results for Xilinx's RFSoC FPGA. In addition to the FPGA function, RFSoC is a chip that integrates CPU, ADC, and DAC and is attracting attention in the defense and space industries aimed at reducing the size of the chip. In order to use these chips in a space environment, an analysis of radiation effects was required and radiation mitigation measures were required. Through the proton irradiation test, the logic to measure the radiation effect of RFSoC was designed. Logic for comparing values stored in memory with normal values was implemented, and protons were irradiated to RFSoC to measure SEU generated in the block memory area. To alleviate the occurrence of SEU in other areas, TMR and SEM were applied and designed. Through the test results, we intend to verify this test configuration and establish an environment in which logic design for satellites can be verified in the future.

Multiscale simulations for estimating mechanical properties of ion irradiated 308 based on microstructural features

  • Dong-Hyeon Kwak ;Jae Min Sim;Yoon-Suk Chang ;Byeong Seo Kong ;Changheui Jang
    • Nuclear Engineering and Technology
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    • v.55 no.8
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    • pp.2823-2834
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    • 2023
  • Austenitic stainless steel welds (ASSWs) of nuclear components undergo aging-related degradations caused by high temperature and neutron radiation. Since irradiation leads to the change of material characteristics, relevant quantification is important for long-term operation, but limitations exist. Although ion irradiation is utilized to emulate neutron irradiation, its penetration depth is too shallow to measure bulk properties. In this study, a systematic approach was suggested to estimate mechanical properties of ion irradiated 308 ASSW. First of all, weld specimens were irradiated by 2 MeV proton to 1 and 10 dpa. Microstructure evolutions due to irradiation in δ-ferrite and austenite phases were characterized and micropillar compression tests were performed. In succession, dislocation density based stress-strain (S-S) relationships and quantification models of irradiation defects were adopted to define phases in finite element analyses. Resultant microscopic S-S curves were compared to verify material parameters. Finally, macroscopic behaviors were calculated by multiscale simulations using real microstructure based representative volume element (RVE). Validity of the approach was verified for the unirradiated specimens such that the estimated S-S curves and 0.2% offset yield strengths (YSs) which was 363.14 MPa were in 10% agreement with test. For irradiated specimens, the estimated YS were 917.41 MPa in 9% agreement.

Prediction of SEE Rates for MPC860 Based on Proton Irradiation Test (양성자 조사 시험에 기초한 MPC860 소자의 SEE 발생률 예측)

  • Kim, Sung-Joon;Seon, Jong-Ho;Jeong, Seong-Keun;Min, Kyoung-Wook;Choe, Won-Ho
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.32 no.5
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    • pp.84-90
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    • 2004
  • A prediction of SEE rates for a candidate microprocessor is made based on the ground experiment results with a proton accelerator. Populations of charged particles in space are estimated with numerical models such as AP8, JPL91 and CREME. The cross section curves that are previously obtained with the accelerator are then employed for SEE prediction. Both the high and low inclinations are considered for low-earth orbits with nominal altitudes of about 685km. The results show that the occurrence rate of SEEs for the candidate device is acceptable for low-inclinations, but can be considerable under worst conditions for high inclinations.

A Study on the SEU in the SRAM to proton Irradiation

  • Lho, Young-Hwan;Park, Bo-Kyun;Kim, Bong-Sun
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.2295-2297
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    • 2003
  • The major problem encountered in satellite design is EMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility). Here, our focus is on the effects of protons on the electronic system. The SEU (Single Event Upset) results from the level change of stored information due to photon radiation and temperature in the space and the nuclear power plant environment. The impact of SEU on PLD (Programmable Logic Devices) technology is most apparent in ROM/SRAM/DRAM devices wherein the state of storage cell can be upset. In this paper, a simple and powerful test techniques is suggested, and the results are presented for the analysis and future reference. The test results are compared with that of JPL test report. In our experiment, the proton radiation facility available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on a commercially available SRAM manufactured by Hynix Semiconductor Company.

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Pretreatment of Rice Straw for Efficient Enzyme Digestibility (효과적인 효소 소화율을 위한 볏짚 전처리)

  • Kim, Sung Bong;Kim, Jun Seok;Lee, Sang Jun;Lee, Ja Hyun;Gang, Seong-U;Kim, Seung Wook
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.253-253
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    • 2010
  • Rice straw was pretreated with aqueous ammonia in order to enhance enzyme digestibility. Soaking in ammonia aqueous (SAA) was conducted with 15% ammonia, at $60^{\circ}C$. for 24 h. Optimization of both saccharification conditions and enzyme loading of SAA rice straw was carried out. Especially enzyme loading test was performed using statistical method. Moreover proton beam irradiation (PBI) was also performed to overcome the problem which inhibit the enzyme digestibility at 1-25 kGy doses with 45 MeV of beam energy. Optimal condition for enzymatic saccharification was follows; pH 4.8, $50^{\circ}C$, 60 FPU of enzyme activity, 1:4 ratio of celluase and ${\beta}$-glucosidase. Also, optimal doses of PBI on rice straw and SAA-treated rice straw for efficient sugar recovery were found to be 3 kGy, respectively. When saccharification was performed with optimal condition, glucose conversion yield was 89% of theocratical maximum in 48 h, and 3 kGy of PBI was applied to SAA-treated rice straw, approximately 90% of the theoretical glucose yield was obtained in 12 h. The results of X-ray diffractometry (XRD) support the effect of both SAA and PBI on sugar recovery, and scanning electron microscopy (SEM) images unveiled the physical change of the rice straw surface since rugged rice straw surface was observed.

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Towards defining a simplified procedure for COTS system-on-chip TID testing

  • Di Mascio, Stefano;Menicucci, Alessandra;Furano, Gianluca;Szewczyk, Tomasz;Campajola, Luigi;Di Capua, Francesco;Lucaroni, Andrea;Ottavi, Marco
    • Nuclear Engineering and Technology
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    • v.50 no.8
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    • pp.1298-1305
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    • 2018
  • The use of System-on-Chip (SoC) solutions in the design of on-board data handling systems is an important step towards further miniaturization in space. However, the Total Ionizing Dose (TID) and Single Event Effects (SEE) characterization of these complex devices present new challenges that are either not fully addressed by current testing guidelines or may result in expensive, cumbersome test configurations. In this paper we report the test setups, procedures and results for TID testing of a SoC microcontroller both using standard $^{60}Co$ and low-energy protons beams. This paper specifically points out the differences in the test methodology and in the challenges between TID testing with proton beam and with the conventional gamma ray irradiation. New test setup and procedures are proposed which are capable of emulating typical mission conditions (clock, bias, software, reprogramming, etc.) while keeping the test setup as simple as possible at the same time.

Test-bed of Total Ionizing Dose (TID) Test by Cosmic Rays for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (금속-산화막 반도체 전계효과 트랜지스터의 우주방사선에 의한 총이온화선량 시험을 위한 테스트 베드)

  • Sin, Gu-Hwan;Yu, Gwang-Seon;Gang, Gyeong-In;Kim, Hyeong-Myeong;Jeong, Seong-In
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.34 no.11
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    • pp.84-91
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    • 2006
  • Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.