• Journal of Institute of Control, Robotics and Systems
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• v.10 no.2
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• pp.178-184
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• 2004

In this paper, we designed an image processing system for the high speed line-scan camera which adopts the new memory model we proposed. As a resolution and a data rate of the line-scan camera are becoming higher, the faster image processing systems are needed. But many conventional systems are not sufficient to process the image data from the line-scan camera during a very short time. We designed the memory controller which eliminates the time for transferring image data from the line-scan camera to the main memory with high-speed SRAM and has a dual-port configuration therefore the DSP can access the main memory even though the memory controller are writing the image data. The memory controller is implemented by VHDL and Xilinx SPARTAN-IIE FPGA.

• Korean Journal of Biological Psychiatry
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• v.23 no.3
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• pp.102-107
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• 2016

This review will summarize EEG studies of learning and memory based on frequency bands including theta waves (4-7 Hz), gamma waves (> 30 Hz) and alpha waves (7-12 Hz). Authors searched and reviewed EEG papers especially focusing on learning and memory from PubMed. Theta waves are associated with acquisition of new information from stimuli. Gamma waves are connected with comparing and binding old information in preexisting memory and new information from stimuli. Alpha waves are linked with attention. Eventually it mediates the learning and memory process. Although EEG studies of learning and memory still have controversial issues, the future EEG studies will facilitate clinical benefits by virtue of more developed and encouraging prospects.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.2
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• pp.87-92
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• 2001

This paper proposes a new content-addressable memory implemented with an analog array which has linear writing and erasing characteristics. The size of the array in this memory is $2{\times}2$, which is a reasonable structure for checking the disturbance of the unselected cells during programming. An intermediate voltage, Vmid, is used for preventing the interference during programming. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We simulate the function of the mechanism by means of Hspice with 1.2${\mu}m$ double poly CMOS parameters of MOSIS fabrication process.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.551-557
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• 2009

A development of smart materials is becoming a prominent issue on present industries. A smart material, included in functions, is needed for micro fabrication. A shape memory alloy(SMA) in a smart material is best known material. Ni-Ti alloy, composed of nikel and titanium is one of the best shape memory alloy(SMA). Nitinol SMA is used for a lot of high tech industry such as aero space, medical device, micro actuator, sensor system. However, Ni-Ti SMA is difficult to process to make a shape and fabrications as traditional machining process. Because nitinol SMA, that is contained nikel content more than titanium content, has similar physical characteristics of titanium. In this paper, the characteristics of ECM grooving process for nitinol SMA are investigated by experiments. The experiments in this study are progressed for power, gap distance and machining time. The characteristics are found each part. Fine shape in work piece can be found on conditions; current 6A, duty factor 50%, gap distance 15%, gap distance $15{\mu}m$, machining time 10min.

• The korean journal of orthodontics
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• v.22 no.3 s.38
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• pp.647-656
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• 1992

The purpose of this study was to evaluate the elastic memory process in cold worked stainless steel wire and the effect of heat treatment on it. 0.018 inch round and $0.019\times0.025$ inch rectangular wire (ORMCO stainless wire) were used in this study. Each wire type had 4 groups: non-heat treatment group, furnace heat treatment group, electric current heat treatment group, and bending after heat treatment group. Each group was consisted of 10 specimens. With the Jig, each wire was bent into v-shape uniformly, and width of two free ends of each v-shaped wire was measured by caliper (to the point of 0.1 mm correctly) at time interval of offjig, after heat treatment, 1, 2, 3, 4 hours, 1, 2, 3, 4, 5, 6 days, 1, 2, 3, 4 weeks after. The results were as follows: 1. In non-heat treatment group and bending after heat treatment group, elastic memory process was occured $60\%$ within 1 hour, and more than $90\%$ within 1 week. 2. In furnace and electric current heat treatment group, almost all elastic memory process was occured during teat treatment, and then specimen was stabilized dimensionally. 3. Magnitude of deformation by elastic memory was greater in heat treatment group than non heat treatment group and bending after heat treatment group. 4. There was no remarkable difference in deformation pattern between 0.018 inch round wire and $0.019\times0.025$ inch rectangular wire.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Korean Journal of Cognitive Science
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• v.30 no.4
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• pp.239-268
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• 2019

Since last several decades, iconic memory has been accepted theoretically valid for its role of the first storage mechanism in visual memory process. However, there have been relatively less interests in iconic memory among researchers than their interests in visual short- and long-term memory. Such little interests seem to arise from a lack of detailed understandings of theories and methodologies about iconic memory and visual persistence. This study aimed to achieve the understandings by reviewing theories and empirical studies of iconic memory and visual persistence. The study further discussed future direction of iconic memory research according to the essential aspects of phenomenological and ecological criticisms against the validity of iconic memory.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2009.01a
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• pp.258-262
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• 2009

In this paper, we propose an effective memory reduction algorithm to reduce the amount of reference frame buffer and memory bandwidth in video encoder and decoder. In general video codecs, decoded previous frames should be stored and referred to reduce temporal redundancy. Recently, reference frames are recompressed for memory efficiency and bandwidth reduction between a main processor and external memory. However, these algorithms could hurt coding efficiency. Several algorithms have been proposed to reduce the amount of reference memory with minimum quality degradation. They still suffer from quality degradation with fixed-bit allocation. In this paper, we propose an adaptive block-based min-max quantization that considers local characteristics of image. In the proposed algorithm, basic process unit is $8{\times}8$ for memory alignment and apply an adaptive quantization to each $4{\times}4$ block for minimizing quality degradation. We found that the proposed algorithm could improve approximately 37.5% in coding efficiency, compared with an existing memory reduction algorithm, at the same memory reduction rate.

• The KIPS Transactions:PartA
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• v.18A no.2
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• pp.61-68
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• 2011

Memory error debugging is one of the most critical processes in improving software quality. However, due to the extensive time consumed to debug, the enhancement often leads to a huge bottle neck in the development process of mobile devices. Most of the existing memory error detection tools are based on static error detection; however, the tools cannot be used in mobile devices due to their use of large working memory. Therefore, it is challenging for mobile device vendors to deliver high quality mobile devices to the market in time. In this paper, we introduce "PinMemcheck", a pin-based memory error detection tool, which detects all potential memory errors within $1.5{\times}$ execution time overhead compared with that of a baseline configuration by applying the Pin's binary instrumentation process and a simple data structure.

• Journal of the Korean Society for Railway
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• v.11 no.2
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• pp.126-138
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• 2008

This paper proposes the preservation method that can effectively process short messages at mobilePOST SMSC(Short Message Service Center) platform on CDMA(Code Division Multiple Access). There are three techniques for the preservation method. First one is shared memory technique where several processes within the system share same memory to process transmission of short messages with maximum performance. Second one is to back-up messages in shared memory to the file system to prevent lost during system initialization or other unstable period. Third technique is that when transmission of short message was completed, finished message is moved from the shared memory to relational database for accounting purposes.