• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.318.2-318.2
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• 2013

기존의 염료감응형 태양전지(Dye Sensitized Solar Cells; DSSCs)는 최대 효율 11~12%의 광전변환효율을 가지고 있다. 이러한 한계를 극복하기 위해서 광흡수 층 최적화, 상대전극의 촉매성 증대, 전해질의 산화 환원 반응 최적화 등의 많은 연구가 이루어지고 있다. 본 연구에서는 DSSCs의 광전변환효율을 증가시키고자 기존의 투명전극 및 기판으로 사용되는 FTO(Fluor-doped Tin Oxide)를 GZO(Gallium-doped Zinc Oxide)를 사용하여 투명전극기판에 따른 계면 저항, 전류손실 등 DSSCs에 미치는 영향을 분석하였다. 본 연구에 사용된 FTO는 ${\sim}7{\Omega}/{\square}$의 면저항과 80%이상의 투과도를 갖고 있으나 Ion-Sputtering 법으로 증착된 GZO는 열처리 과정을 통하여 $3{\sim}4{\Omega}/{\square}$의 면 저항을 나타내고 80%이상의 우수한 투과도를 가지고 있다. 이러한 두 기판의 특성 비교를 위해, UV-Visble Spectrophotometer를 사용하여 광학적 특성을 분석하고, SEM(Scanning Electron Microscope), AFM(Atomic Force Microscope)를 사용하여 표면 특성을 평가하였다. 또한 전기적 특성을 분석하기 위하여 4-Point-probe를 이용하여 면 저항을 측정하였고, DSSCs의 효율 및 Fill Factor를 분석하기 위하여 Solar Simulator의 I-V measurement를 이용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.268.2-268.2
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• 2013

Nanogap interdigitated electrodes (NIDEs) can serve as an alternative platform for the biomolecular detection [1]. In this work, the NIDEs were adopted in a simple and sensitive detection of Pneumococcal surface protein A (PspA). The NIDEs were fabricated by the combination of photo and chemical lithography. Photolithographically-defined initial gap of about 200 nm was narrowed down to a few tens of nanometers by surface-initiated growth of the initial electrodes (chemical lithography) [2]. Bare silicon oxide surface between the electrodes was chemically modified to immobilize capturing antibodies and, after exposure to the samples, the device was immersed in a solution containing the probe-antibody-conjugated Au nanoparticles (Au NPs). The conductance change accompanied with the Au NP immobilization was interpreted as the existence of PspA. Detection limit of the measurements and further improvement of the detection efficiency were discussed with the results from I-V analysis, scanning electron microscopy, and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.1-191.1
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• 2013

현재 산업계 전반적으로 사용되고 있는 박막형 태양전지 투명 전도막의 재료로는 ITO 와 Al, In, Ga, B, Si, F 등으로 도핑된 ZnO 박막이 사용되고 있으며, 그 중에서도 Al 이 도핑된 ZnO 박막은 넓은 밴드갭을 가진 n-type 반도체로서, 적외선 및 가시광 영역에서의 높은 투과성과 우수한 전도성을 가지며, 고온에서 안정된 전기적 특성, 낮은 원가 등의 장점을 지녀 그 응용 연구가 활발히 이루어지고 있다 [1]. 본 연구에서는 RF magnetron Sputter 법을 이용하여 Flexible 기판 위에 AZO 박막을 증착하였다. 실험변수로는 RF power, Pressure등을 이용하였고, 최적조건에서의 박막의 투과도는 90%이상, 면저항은 30 ${\Omega}/{\square}$ 이하를 나타내었다. 그리고 (주)인포비온에서 원천기술을 갖고있는 EBA technology를 이용하여 후처리 하여 전기적, 광학적, 구조적인 특성의 변화를 관찰하였다. AZO 박막의 두께를 측정하기 위해 ${\alpha}-step$과 SEM을 이용하였고, 투과도는 UV-Vis spectrometer를 사용하여 박막의 투과도 변화를 관찰 하였다. 전기적인 특성은 4-Point probe를 이용하여 측정하였다. 또한, 박막의 결정성과 거칠기의 변화는 XRD(X-ray Diffraction)와 원자간력현미경(Atomic Force Microscope; AFM) 을 이용하여 측정하였으며, 전기 광학적 특성 변화는 Figure Of Merit(FOM) 수치로 분석하였다. 본 연구에서 AZO 박막의 특성은 EBA 조사 후 특성의 향상이 이루어지는 것을 관찰할 수 있었다.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.344-348
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• 2009

The electrolyte effects of the electroplating solution in Cu films grown by ElectroPlating Deposition(EPD) were investigated. The electroplated Cu films were deposited on the Cu(20 nm)/Ti (20 nm)/p-type Si(100) substrate. Potentiostatic electrodeposition was carried out using three terminal methods: 1) an Ag/AgCl reference electrode, 2) a platinum plate as a counter electrode, and 3) a seed layer as a working electrode. In this study, we changed the concentration of a plating electrolyte that was composed of $CuSO_4$, $H_2SO_4$ and HCl. The resistivity was measured with a four-point probe and the material properties were investigated by using XRD(X-ray Diffraction), an AFM(Atomic Force Microscope), a FE-SEM(Field Emission Scanning Electron Microscope) and an XPS(X-ray Photoelectron Spectroscopy). From the results, we concluded that the increase of the concentration of electrolytes led to the increase of the film density and the decrease of the electrical resistivity of the electroplated Cu film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.123-123
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• 2010

투명전극 물질인 ITO는 가시광선 영역에서 높은 투과율과 낮은 전기저항을 나타내어 OLED, PDP, LCD등 다양한 분야에서 널리 사용되는 물질이다. 하지만 차세대 조명으로 개발이 확대되고 있는 OLED 조명 등 더 많은 분야에 적용하기 위해서는 많은 개선점이 필요하다. 특히 픽셀 구조가 아닌 OLED 조명의 경우 ITO의 저항에 의해 전압 강하가 발생하여 휘도 불균일, 발열 등의 문제가 발생할 수 있다. 이 때문에 보다 우수한 전기적인 특성과 높은 투과율을 갖는 투명전극이 필요하다. 현재 이러한 문제점을 개선하기 위해 ITO 박막 내부에 얇은 금속 층을 삽입하여 다층 박막으로 증착하는 연구가 활발히 진행되고 있다. 본 연구에서는 기존의 투명 전극인 ITO 대신 ITO 중간에 Ag를 삽입한 3층 박막인 ITO/Ag/ITO와 5층 박막인 ITO/Ag/ITO/Ag/ITO를 투명 전극으로 대체하였을 때 수반되는 전기적, 광학적 특성을 알아보고자 한다. 또한 열처리 조건을 다르게 하여 열처리에 따른 다층 박막의 특성 변화도 비교해보았다. In-line 형태의 RF-DC sputter를 이용하여 다층박막을 증착시킨 후 Oven과 Vacuum Oven에 열처리를 하여 특성을 알아보았다. 전기적 특성을 알아보기 위해 4-point probe를 이용하여 비저항을 측정하였고, UV-VLS spectrometer를 이용하여 투과율을 측정하였다. 또한, Atomic force microscopy(AFM)을 이용하여 표면 형상을 측정하였다.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.102-108
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• 2008

We have studied the properties of Ag/undoped ZnO (ZnO) multilayer thin films deposited on glass substrate by the facing targets sputtering method. In an attempt to find out the optimum conditions of the Ag thin film, which would be coated on the ZnO thin film, we investigated the changes of sheet resistance, transmittance and surface morphology as a function of deposition times and the substrate temperature. The electrical and optical characteristics of Ag/ZnO multilayers were evaluated by a four-point probe, a UV/VIS spectrometer with a spectral range of 390-770 nm, a X-ray Diffractometer (XRD), an atomic force microscope (AFM) and a Field Emission Scanning Electron Microscope (SEM), respectively. We were able to prepare the Ag/ZnO multilayer thin film with sheet resistance of 9.25 $\Omega/sq.$ and transmittance of over 80% at 550nm.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).