• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.246-250
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• 2000

Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.