• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• KSBB Journal
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• v.14 no.4
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• pp.422-428
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• 1999

A transformat Alcaligence eutrophus GA5 harboring phbC gene from A. latus was cultivated for production of Poly(3-hydroxybutyrate-4-hydroxybutyrate)[P(3HB-4HB)] containing high molar fraction of 4-hydroxybutyrate(4HB)] containing high molar fraction of 4-hydroxybutyrate(4HB). Transformation did not influenced significantly on total cell growth, on total cell growth, concentration, and content of P(3HB-4HB), however, significantly influenced on 4HB molar fraction in P(3HB-4HB) increasing from 12.3 to 23.5 mol% after 48 h cultivation in two-stage using 1.0%(W/V) of ${\gamma}$-butyrolactone as a precursor compare to parent strain. Above increment may be due to the accelerated polymerization between 3HB and 4HB converted from precusor compound by amplified phbC gene. Citrate increased remarkbly total cell mass and P(3HB-4HB) concentration, but did not influenced on the molar fraction of 4HB, meanwhile, magnesium ion influenced on P(3HB-4HB) concentration and 4HB molar fraction significantly. The two-stage cultivation method was modified, in such a way minimizing P(3HB) accumulated inside of cell grown at first-stage, consquently, 26.3% of P(3HB-4HB) containing 61.0 mol% of 4HB fraction was obtained after 72hr. Furthermore, semi-homopolymeric P(4HB) containing 92.0 mol% of 4Hb was obtained, and its structure was confirmed by $^1$H-NMR.