• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.182.2-182.2
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• 2015

최근 학계나 산업계에서 투명 전자 소자에 대하여 활발한 연구가 진행되면서, 투명 전 도성 산화물(TCO: transparent conductive oxide)에 대한 관심이 높아지고 있다. 대표적인 TCO 물질인 Indium Tin Oxide (ITO)는 가시 광 영역에서의 높은 투과 및 높은 도전성을 가져 전압을 인가하면 발열이 가능하므로 이를 투명 면상 발열체에 적용시키는 연구가 활발히 진행되고 있다. 하지만, ITO는 발열 테스트 결과 온도가 상승함에 따라 발열이 일부분에 집중되는 현상이 있으며, 전도성을 높이기 위하여 추가공정이 필요하다. 또한, 글라스의 곡면 부분에서 ITO를 사용하면 유연성이 부족하므로 크랙이 발생한다는 단점이 있다. 따라서, 최근 Silver nanowire (AgNW), Single-walled Carbon nanotube (SWCNT), ITO를 기반으로 한 AgNW에 ITO를 증착 하거나 SWCNT를 코팅하여 우수한 전기적, 광학적 특성을 지닌 하이브리드 전극이 투명 면상 발열체 재료로서 사용되고 있다. 하지만 대체된 재료들도 다양한 문제점을 가지고 있다. 예를 들어 고온에서 발열을 유지하지 못하고 끊어지거나 가시광영역의 투과율이 낮은 점 등이 있다. 이런 다양한 문제점들을 보완 할 수 있는 새로운 투명 면상 발열체에 적용한 연구가 요구되고 있다. 본 연구에서는 GZO/Ag/GZO 하이브리드 구조의 투명 면상 발열체를 제작하여 전기적, 광학적 특성을 비교하고 발열량, 온도 균일 성, 발열 유지 안정도를 확인하였다. 본 연구에서는 $50{\times}50mm$ 크기의 Non-alkali glass (삼성코닝 E2000) 기판 상에 DC마그네트론 스퍼터링 공정을 이용하여 상온에서 GZO, Ag, GZO 박막을 연속적으로 증착 하여 다층구조의 하이브리드형 투명 면상 발열체를 제조하였다. 박막 증착 파워는 DC (Ag) power 50 W, RF (GZO) power 200 W로 하였으며 GZO박막두께는 45 nm로 고정 시키고 Ag박막 두께는 5~20 nm로 변화를 주었다. 증착원은 3인치 GZO 세라믹 타깃 (2.27 wt. % Ga2O3) 과 Ag 금속 타깃 (순도 99.99%)을 사용하였으며, Ar을 40 sccm 주입 후 Working pressure는 고 순도 Ar을 사용하여 1.0 Pa로 고정하며 10분간 Pre-sputtering을하고 증착을 진행하였다. 앞선 실험을 통해 증착한 박막의 전기적, 광학적 특성은 각각 Hall-effect measurements system (ECOPIA, HMS3000), UV-Vis spectrophotometer (UV-1800, Shimadzu)를 사용해 측정 되었으며, 하이브리드 표면의 구조 및 형상은 FESEM으로 관찰하였다. 또한 표면온도 측정기infrared camera (IR camera)를 이용하여 4~12 V/cm의 전압을 인가 시 시간에 따른 투명 면상 발열체의 표면 온도변화를 관찰하였다.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.64-64
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• 2003

Objectives: Patient dose verification is clinically the most important parts in the treatment delivery of radiation therapy. The three dimensional(3D) reconstruction of dose distribution delivered to target volume helps to verify patient dose and determine the physical characteristics of beams used in intensity modulated radiation therapy(IMRT). We present Beam Intensity Scanner(BInS) system for the pre treatment dosimetric verification of two dimensional photon intensity. The BInS is a radiation detector with a custom made software for relative dose conversion of fluorescence signals from scintillator. Methods: This scintillator is fabricated by phosphor Gadolinium Oxysulphide and is used to produce fluorescence from the irradiation of 6MV photons on a Varian Clinac 21EX. The digitized fluoroscopic signals obtained by digital video camera will be processed by our custom made software to reproduce 3D relative dose distribution. For the intensity modulated beam(IMB), the BInS calculates absorbed dose in absolute beam fluence, which are used for the patient dose distribution. Results: Using BInS, we performed various measurements related to IMRT and found the followings: (1) The 3D dose profiles of the IMBs measured by the BInS demonstrate good agreement with radiographic film, pin type ionization chamber and Monte Carlo simulation. (2) The delivered beam intensity is altered by the mechanical and dosimetric properties of the collimating of dynamic and/or static MLC system. This is mostly due to leaf transmission, leaf penumbra, scattered photons from the round edges of leaves, and geometry of leaf. (3) The delivered dose depends on the operational detail of how to make multileaf opening. Conclusions: These phenomena result in a fluence distribution that can be substantially different from the initial and calculative intensity modulation and therefore, should be taken into account by the treatment planing for accurate dose calculations delivered to the target volume in IMRT.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.597-603
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• 2008

Oxide effects experiments on massive hydriding reactions of Zr alloy with hydrogen gas were carried out at $400^{\circ}C$ under 1 atm in a $H_2$ environment with a thermo-gravimetric apparatus (TGA). Experimental results for oxide effects on massive hydriding kinetics show that incubation time is not proportional to oxide thickness. The results also show that the massive hydriding kinetics of pre-filmed Zr alloys follows linear kinetic law and that the hydriding rates are similar to that of oxide-free Zr alloys once massive hydriding is initiated. Unlikely microstructure of the oxide during incubation time, physical defects such as micro-cracks and pores were observed in the oxide after incubation time. Therefore, it seems that the massive hydriding of Zr alloys can be ascribed to short circuit paths and mechanical or physical defects, such as micro-cracks and pores in the oxide, rather than to hydrogen diffusion through the oxide resulting from the increase of oxygen vacancies in the hypo-stoichiometric oxide.

• Journal of the Ergonomics Society of Korea
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• v.29 no.5
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• pp.783-788
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• 2010

This study was to examine to the CNS(Central Nervous System) responses of elderly drivers at the green, yellow, and red signal types. To examine this result, the older adults over age 65 who has more than 5 years of driving experience participated this experiment. In addition, we used audio-visual film clips as the stimulus than driving simulator, because the CNS reponses are sensitive to movement such as steering wheel. While subjects were watching one car's driving among green, yellow, or red signal types at the intersection, we measured their EEG(electroencephalogram) using monopolar electrodes from Fz, Cz and Pz sites. As a result, relative sizes of beta waves were changed due to the signal type conditions, and pre- and post-time of entering the intersection at the measured sites, separately. It suggests that the elderly drivers' CNS responses were different by the signal types.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.177-181
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• 2014

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

• Imaging Science in Dentistry
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• v.34 no.2
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• pp.63-67
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• 2004

Purpose: To make a focal trough (image layer) for an average maxillary dental arch of 6-year-old korean in panoramic radiography. Materials and Methods : Phantom for the maxillary dental arch was designed using intercanine width, intermolar width, tooth size, and interdental spacing to record the data of 6-year-old child. The characteristics of pre-corrected panoramic machine (for adult) was evaluated using the phantom, resolution test pattern for margin of the image layer, and metal ball for the center of the image layer. Panoramic image layer of the child was developed by means of decreasing the speed of film-cassette and positioning the phantom backwards, and then the characteristics of post-corrected panoramic machine (for child) were reevaluated. Results: At post-corrected panoramic image layer, beam projection angles at all interdental areas increased for about 2.6-3.8°, the position of the image layer was shifted toward the rotation center for about 2.5 mm at the deciduous central incisior area. The width of image layer decreased at all areas. Conclusion : Increased beam projection angle will reduce the disadvantage of tooth overlap, and the same form between the center of the image layer and dental arch will improve image resolution.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.102-112
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• 2005

In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.1-8
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• 2008

We fabricated flexible electrophoretic display(EPD) driven by organic thin film transistors(OTFTs) on plastic substrate. We designed the W/L of OTFT to be 15, considering EPD's transient characteristics. The OTFTs employed bottom contact structure and used Al for gate electrode, the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. The plastic substrate was coated by PVP barrier layer in order to remove the islands which were formed after pre-shrinkage process and caused the electrical short between bottom scan and top data metal lines. Pentacene active layer was confined within the gate electrodes so that the off current was controlled and reduced by gate electrodes. Especially, PVA/Acryl double layers were inserted between EPD panel and OTFT-backplane in order to protect OTFT-backplane from the damages created by lamination process of EPD panel on the backplane and also accommodate pixel electrodes through via holes. From the OTFT-backplane the mobility was $0.21cm^2/V.s$, Ion/Ioff current ratio $10^5$. The OTFT-EPD panel worked successfully and demonstrated to display some patterns.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.14-19
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• 2000

Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.31-38
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• 2002

In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.