• 전기전자학회논문지
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• 제22권2호
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• pp.339-343
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• 2018

본 연구는 IGBT 구조에서 JFET 영역의 드라이브 인 확산거리 및 JFET영역의 윈도우의 크기에 따라서 항복전압과 온상태 전압강하 특성을 분석하였다. 시간은 동일하게 하면서 온도를 상승시켜 확산거리를 조정하였으며, 그 결과 항복전압은 감소되나, 온 상태 전압 강하 특성은 현저하게 좋아지는 것을 알 수 있었다. 따라서 드리프트 층의 비저항을 변화시켜 항복전압을 1440V로 고정하여 1.15V의 낮은 온 상태 전압 강하 값을 얻을 수 있었다. 따라서 본 연구결과를 토대로 Planar Gate IGBT에서는 JFET 영역의 공정 및 설계 파라미터를 효율적으로 조절한다면 같은 항복전압을 기준으로 상당히 낮은 온 상태 전압 강하 값을 확보할 수 있어, 소비전력의 측면에서 충분히 활용할 수 있을 것으로 판단된다.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 한국컴퓨터산업교육학회 2003년도 제4회 종합학술대회 논문집
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• pp.95-98
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• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.694-700
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• 1998

A novel zero-voltage-transition (ZVT) isolated PWM boost converter for single stage power factor correction (PFC) is presented to improve the performance of the previously presented ZVT converter[8]. A simple auxiliary circuit which includes only one active switch provides zero-voltage-switching (ZVS) condition to all semiconductor devices. (Two active switches are required for the previous ZVT converter) This leads to reduced cost and simplified control circuit comparing to the previous ZVT converter. The ZVS is achieved for wide line and load ranges with minimum device voltage and current stresses. Operation principle, control strategy and features of the proposed converter are presented and verified by the experimental results from a 1.5 kW, 100 KHz laboratory prototype.

• Journal of Power Electronics
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• 제11권4호
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• pp.612-619
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• 2011

This paper presents a water treatment system for leachate from sewage-filled ground that uses a pulsed-power modulator developed based on semiconductor switches in order to realize a long life, a high repetition rate, and a fast rising time. The specifications of the developed pulsed-power modulator are the pulsed output voltage, the output current, the pulse repetition rate (PRR), the pulse width, and an average output power of $60\;kV_{max}$, $300\;A_{max}$, 3000, $50\;{\mu}s$, and 15 kW, respectively. The pulsed-power water treatment system was introduced and analyzed using an equivalent electrical circuit model to optimize the output voltage waveform. The experimental results verify that the proposed water treatment system can be effectively used for industrial applications.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.644-649
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• 2001

This paper proposes a soft-switching current -source inverter for photovoltaic power system, which has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an L-C resonant circuit. The operation of proposed system was analyzed by a theoretical approach with equivalent circuits and verified by computer simulations with SPICE and experimental works with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the power system.

• 전력전자학회논문지
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• 제18권2호
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• pp.199-204
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• 2013

Recently, the demand for fuel efficient electric vehicles (EVs) and hybrid electric vehicles (HEVs) has been growing globally. Due to the increased number of switching devices in the electrified vehicles, the probability of the semiconductor device failure is much higher than in other application areas. A sudden failure in one of the power switches and insufficient power management ability in the systems not only decreases system performance, but also leads to critical safety problems. In this paper, novel switch open circuit fault detection method is proposed, and the proposed approach is verified by experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.522-526
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• 1989

Recently developments of high-speed Semi-conductor Switches as Power MOSFETS, Power IGBT, power SIT have enwidened the performance of classical inverter configuration, and also allowed the practical applications of new inverter configuration, with improved performance and wider operating zones. Static power converters are now used in a great variety of applications including induction heating, high-frequency generation, DC/DC power converter, etc.

• 전력전자학회논문지
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• 제20권1호
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.19-26
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• 2006

본 논문은 예비 전력공급설비의 일환으로 비상시 소방 방재설비에 적용되는 연료전지 발전시스템에 대해 연구된다. 제안된 시스템은 비상시 상용 전력공급의 차단에 대비하여 소방 방재설비들의 전력공급원으로 이용된다. 연료전지 발전시스템에서 가장 손실이 큰 부분은 전력변환부이다. 또한 전력변환부의 손실은 전력변환을 위해 사용된 전력용 반도체 스위치의 스위칭 손실로 주어진다. 본 논문에서는 이러한 연료전지 발전시스템의 출력을 최대한 활용하기 위하여 부분공진의 기법이 적용된 고효율의 전력변환기가 제안된다. 또한 연료전지 발전시스템에 적용된 고효율 전력변환기는 비절연형으로 설계되고 사용된 제어스위치들은 새로운 소프트 스위칭 회로토폴로지에 의해 무손실로 동작되어 시스템의 효율을 증대시킨다. 다양한 컴퓨터 시뮬레이션과 특성실험을 통해 이론적 해석의 타당성이 입증된다.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제3B권1호
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.