• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• Journal of Power Electronics
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• v.14 no.5
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• pp.899-907
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• 2014

This paper proposes a single-phase bidirectional AC/DC converter topology applied in V2G systems, which consists of an inverter and a bidirectional non-inverting buck-boost converter. This topology can operate in four modes: buck charging, boost charging, buck discharging and boost discharging with high input current quality and unity input power factor. The inverter switches at line frequency, which is different from conventional voltage source inverters. A bidirectional buck-boost converter is utilized to adapt to a wider charging voltage range. The modulation and control strategy is introduced in detail, and the switching patterns are optimized to reduce the current ripple. In addition, the semiconductor losses are analyzed. Simulation and experimental results demonstrate the validity and effectiveness of the proposed topology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.760-767
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• 2014

This paper describes a high-radix crossbar switch design with low latency and power dissipation for Network-on-Chip (NoC) applications. The reduction in latency and power is achieved by employing a folded-clos topology, implementing the switch organized as three stages of low-radix switches connected in cascade. In addition, to facilitate the uniform placement of wires among the sub-switch stages, this paper proposes a Mux-Matrix-Mux structure, which implements the first and third switch stages as multiplexer-based crossbars and the second stage as a matrix-type crossbar. The proposed 256-radix, 8-bit crossbar switch designed in a 65nm CMOS has the simulated power dissipation of 1.92-W and worst-case propagation delay of 0.991-ns while operating at 1.2-V supply and 500-MHz frequency. Compared with the state-of-the-art designs in literature, the proposed crossbar switch achieves the best energy-delay-area efficiency of $0.73-fJ/cycle{\cdot}ns{\cdot}{\lambda}^2$.

• Journal of Power Electronics
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• v.17 no.1
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• pp.41-55
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• 2017

This study proposes a novel zero voltage transition (ZVT) pulse width modulation (PWM) DC-DC interleaved boost converter with an active snubber cell. All the semiconductor devices in the converter turn on and off with soft switching to reduce the switching power losses and improve the overall efficiency. Through the interleaved approach, the current stresses of the main devices and the ripple of the output voltage and input current are reduced. The main switches turn on with ZVT and turn off with zero voltage switching (ZVS). The auxiliary switch turns on with zero current switching (ZCS) and turns off with ZVS. In addition, the snubber cell does not create additional current or voltage stress on the main switches and main diodes. The proposed converter can smoothly achieve soft switching characteristics even under light load conditions. The theoretical analysis and operating stages of the proposed converter are made for the D > 50% and D < 50% modes. Finally, a prototype of the proposed converter is implemented, and the experimental results are given in detail for 500 W and 50 kHz. The overall efficiency of the proposed converter reached 95.5% at nominal output power.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.377-382
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• 2005

This paper presents two new circuit topologies of DC bus lineside active edge resonant snubber assisted soft-switching PWM full-bridge DC-DC converter acceptable for either utility AC 200V-rms or AC 400V-rms input voltage source. One topology of proposed DC-DC converters is composed of a typical voltage source-fed full-bridge high frequency PWM inverter using DC busline side series power semiconductor switching devices with the aid of a parallel capacitive lossless snubber. All the active power switches in the full-bridge arms and DC busline can achieve ZCS turn-on and ZVS turn-off commutations and the total turn-off switching power losses of all active switches can be reduced for high-frequency switching action. It is proved that the more the switching frequency of full-bridge soft switching inverter increases, the more soft-switching PWM DC-DC converter with a hish frequency transformer link has remarkable advantages for its efficiency and power density as compared with the conventional hard-switching PWM inverter type DC-DC converter

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.8
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• pp.408-415
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• 2001

Using power semiconductor switches such as IGBTs, diodes and L-C circuits, novel repetitive impulse voltage generator is developed. In the presented circuits, high voltage pulse is generated by series-connection of capacitors and IGBTs. Therefore, the high voltage pulse is obtained by circuit configuration without any high voltage pulse transformer and high voltage dc source. Especially, the proposed circuit can operate up to several kHz and have high reliability and longer life than conventional ones. In also gives voltage balance of IBGTs automatically. So, the difference of characteristics of IGBTs and drive signal does not cause severe problems. To verify the proposed circuit, 20kV and 300A pulse generator is manufactured and tested.

• Journal of IKEEE
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• v.19 no.4
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• pp.479-485
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• 2015

A resistance deviation-to-time interval converter based on dual-slope integration using second generation current conveyors (CCIIs) is designed for connecting resistive bridge sensors with a digital system. It consists of a differential integrator using CCIIs, a voltage comparator, and a digital control logic for controlling four analog switches. Experimental results exhibit that a conversion sensitivity amounts to $15.56{\mu}s/{\Omega}$ over the resistance deviation range of $0-200{\Omega}$ and its linearity error is less than ${\pm}0.02%$. Its temperature stability is less than $220ppm/^{\circ}C$ in the temperature range of $-25-85^{\circ}C$. Power dissipation of the converter is 60.2 mW.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.301-303
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• 2001

In this paper we present a Capacitor Charging Power Supply (CCPS) using a series-resonant three-level inverter topology to improve voltage regulation and use semiconductor switches having low blocking voltage capability such as MOSFETs. This inverter can be operated with two modes, Full Power Mode (FPM) and Half Power Mode (HPM). In FPM inverter supplies the high frequency step up transformer with full DC-link voltage and in HPM with half DC-link voltage. HPM switching method will be adopted when CCPS output voltage reaches the preset target value and operates in refresh mode-charge is maintained on the capacitor. In this topology each semiconductor devices blocks a half of the DC-link voltage[2]. A 15kW, 30kV CCPS has been built and will be tested for an electric precipitator application. The CCPS operates from an input voltage of 500VDC and has a variable output voltage between 10 to 30kV and 1kHz repetition rate at 44nF capacitive load [3]. A resonant frequency of 67.9kHz was selected and a voltage regulation of $0.83\%$ has been achieved through the use of half power mode without using the forced cut off the switch current [1]. The theory of operation, circuit topology and test results are given.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.15-16
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• 2010

This paper is study on a high efficiency DC-DC converter of discontinuous conduction mode (DCM) added electric isolation. The converters of high efficiency are generally made that the power losses of the used semiconductor switching devices is minimized. To achieve high efficiency system, the proposed converter is constructed by using a quasi resonant circuit. The control switches using in the converter are operated with soft switching by quasi resonant method. The control switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the efficiency of the system is high. The proposed converter is also added electric isolation which is used a pulse transformer. When the power conversion system is required electric isolation, the proposed converter is adopted with the converter system development of high efficiency. The soft switching operation and the system efficiency of the proposed converter are verified by digital simulation and experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.