• Journal of Communications and Networks
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• 제9권1호
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• pp.50-55
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• 2007

We propose to apply chip interleaving and iterative detection to self-encoded multiple access (SEMA) communications. In SEMA, the spreading code is obtained from user bit information itself without using a pseudo noise code generator. The proposed scheme exploits the inherent diversity in self encoded spread spectrum signals. Chip interleaving not only increases the diversity gain, but also enhances the performance of iterative detection. We employ user-mask and interference cancellation to decouple self-encoded multiuser signals. This paper describes the proposed scheme and analyzes its performance. The analytical and simulation results show that the proposed system can achieve a 3 dB power gain and possess a diversity gain that can yield a significant performance improvement in both Rayleigh and multipath fading channels.

• 정보와 통신
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• 제16권10호
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• pp.112-124
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• 1999

본 논문에서는 FTTC/VDSL (Fiber-to-the-Curb/Very High-speed Digital Subscriber Line) 전송시스템의 개발동향과 ANSI, ETSI, ITU등의 표준화 위원회에서 현재 진행중인 VDSL 시스템의 표준화 작업에 대해 기술하였다. 특히, POTS (Plain Old Telephone Service), BA-ISDA(Basic Access Integrated Services Digital Network), HDSL(High-rate Digital Subscriber Line), SDSL (Single-pair HDSL), ADSL(Asymmetric Digital Subscriber Line) 등의 다양한 xDSL (Digital Subscriber Line) 서비스들에서 발생하는 NEXT (Near-end Crosstalk)/FEXT (Far-end Crosstalk)와 같은 crosstalk를 최소화하기 위해 제안된 VDSL시스템의 주파수 대역과 PSD (Power Spectral Density) mask에 관해 설명하고, 순방향(down-stream) 채널과 역방향(upstream) 채널의 데이터 전송률이 대칭적인 VDSL전송시스템과 비대칭적인 VDSL 전송시스템 간의 주파수대역의 호환성 문제, RFI(Radio Frequency Interference) ingress/egress 문제의 해결 방안에 관해 기술하였다. 또한, 현재 VDSL Coalition과 VDSL Alliance 간에 논의 중인 VDSL 전송시스템의 변복조 방식에 관한 표준화 작업과정 및 순방향과 역방향에 할당될 band 개수에 따른 시스템 성능의 장단점 등에 관해 살펴보았다. 끝으로 현재 국내에서 개발되고 있는 FTTC/VDSL 전송시스템의 전체구조를 요약하고, 네트워크에서 가입자쪽으로 순방향 데이터 전송에 사용된 51.84 Mb/s 19-CAP (Carrierless Amplitude/Phase Modulation) 전송시스템과 가입자 댁내에서 네트워크 방향으로 역방향 데이터 전송에 사용된 1.62 Mb/s QPSK (Quadrature Phase Shift Keying) burst-mode TDMA (Time Division Multiple Access) 전송시스템 등의 동작 원리 및 구조를 기술하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• ETRI Journal
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• 제32권1호
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• pp.11-21
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• 2010

A novel ultra-wideband (UWB) transceiver structure is presented to be used in wireless body area networks (WBANs). In the proposed structure, a data channel and a control channel are combined into a single transmission signal. In the signal, a modulation method mixing pulse position modulation and pulse amplitude modulation is proposed. A mathematical framework calculating the power spectrum density of the proposed pulse-based signal evaluates its coexistence with conventional radio systems. The transceiver structure is discussed, and the receiving performance is investigated in the additive white Gaussian noise channel. It is demonstrated that the proposed scheme is easier to match to the UWB emission mask than conventional UWB systems. The proposed scheme achieves the data rate requirement of WBAN; the logical control channel achieves better receiving performance than the logical data channel, which is useful for controlling and maintaining networks. The proposed scheme is also easy to implement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• 한국인쇄학회지
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• 제26권2호
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• pp.45-54
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• 2008

We have manufactured a photoresist which has excellent dispersity and good applying property due to 330 cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed with mask by UV-LED light source so we could manufacture the photoresist which proper for the UV light source. And it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. Because of the excellence of power and resolution of the UV-LED light sourse, the pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film. Moreover the $100{\mu}m$-width stripe image which has sharp edges was formed. So we confirmed a possibility of dry development process by air spray method.

• 한국가구학회지
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• 제18권3호
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• pp.211-223
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• 2007

21 Century is said the age of cultural industry. In this cultural Industry one of very important factors which guides this times is the exploitation of cultural goods, which is based on regional identity. Therefore, at this point of time when its weighty has been raised, the aim of this study is to fill the image Korean tradition and modernity culture in them, through the search on their characteristics among regions and nations, desk the cultural service goods which gets survival power of traditional and cultural identity. Nine existing Hahoe masks are changed into nine new cultural items, which are presented the nine dreams of Hahoe masks. As consumer's choice is diversified by a set of products, main concept in this study is the focus on modernity, rationality, traditionality and popularity. The main concept of this study is on rational functions and convenience, the harmony of tradition and modernity. As said above, in the process of manufacture the mass production of goods is stressed, and by getting the composition and making a set of goods, the choice of consumers will be extended. Getting ideal globalization by the coexistence of tradition and modernity on goods, is very important. Consequently, cultural goods must be recognized as a factor of its medium, and also, on domestic cultural goods people's interest must be risen all the more.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.232-232
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• 2010

정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.