• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1646-1654
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• 2002

A two-phase closed thermosyphon was one of the most effective devices in the removing heat because of its simple structure, thermal diode characteristics, wide operating temperature range and so on. In this study, a two-phase closed thermosyphon(working fluid PFC(C6F14), container copper(inner grooved surface)) was fabricated with a reservoir which can change the fill charge ratio. The experiments were performed in the range of 50~600W heat flow rate and 10~70% fill charge ratio. The results were compared with some correlations that were presented by Rohsenow and Immura et al. in the evaporator, by Nusselt, Gross and Uehara et al. in the condenser and by Cohen and Bayley, Wallis, Kutateladze and Faghri et al. in heat transfer limitation etc.. The heat transfer coefficient at the evaporator increased with the input power. However the effect of the fill charge ratio was nearly negligible. At the condenser, it showed an opposite trend to the evaporator and with increase of the fill charge ratio, showed some enhancement of heat transfer. The heat transport limitation was occurred by the dry-out limitation for small fill charge ratio(10%) and presented about 100W. For the case of large fill charge ratio(Ψ$\geq$40%), it was occurred by the flooding limitation at about 500W.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.7
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• pp.1538-1543
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed split ring resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}/4$ microstrip resonator. Next, we designed voltage controlled oscillator using proposed split ring resonator with varactor diode. The VCO has 125MHz tuning range from 5.833GHz to 5.845GHz, and phase noise characteristic is -118~-115.5 dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Journal of Powder Materials
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• v.21 no.3
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• pp.215-221
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• 2014

Translucent alumina is a potential candidate for high temperature application as a replacement of the glass or polymer. Recently, due to the increasing demand of high power light emitting diode (LED), there is a growing interest in the translucent alumina. Since the translucent property is very sensitive to the internal defect, such as voids inside or abnormal grain growth of sintered alumina, it is important to fabricate the defect-free product through the fabrication process. Powder injection molding (PIM) has been commonly applied for the fabrication of complex shaped products. Among the many parameters of PIM, the flowability of powder/binder mixture becomes more significant especially for the shape of the cavity with thin thickness. Two different positions of the gate were applied during PIM using the disc type of die. The binder was removed by solvent extraction method and the brown compact was sintered at $1750^{\circ}C$ for 3 hours in a vacuum. The flowability was also simulated using moldflow (MPI 6.0) with two different types of gate. The effect of the flowability of powder/binder mixture on the microstructure of the sintered specimen was studied with the analysis of the simulation result.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.51 no.2
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• pp.179-187
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• 2015

Experiments designed to measure the effect of LED (light-emitting diode) light wavelength on the growth of fingerling rockfishes (Sebastes inermis) were conducted. Fingerling rockfishes (average body weight of individual: 1.13g) were divided into two groups by wavelength of the LED light [light power: 1,620 mW; wavelength: 518 nm (green color), 622 nm (red color)]. Triplicate groups of 180 individuals were reared over 7 weeks. Lighting duration was 14 hours from 06:00 to 20:00. A water tank exposed on the natural light in a room through the windows was used as a control. At results of the first experiment [initial average body weight (BW) of individual: 1.13 g; standard deviation (SD): 0.13 g], the final individual BW exposed on the green color was increased 0.39 g than the red color, and decreased 0.12 g than the natural light in the room. At results of the second (initial individual BW: 5.07 g; SD: 0.70 g) and the third experiment (initial individual BW: 10.67 g; SD: 0.67 g), the final individual BW exposed on the green color was increased 1.07 g and 2.55 g than the red color, respectively, and increased 0.57 g and 0.84 g than the natural light, respectively. The relative growth rate of the green color was higher about 8% significantly (p<0.05) than the natural light. In the case of the red color the relative growth rate was lower significantly (p<0.05) than the natural light.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.268-272
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• 2006

We have demonstrated the selection and the amplification of the components of an optical frequency comb using femto-second laser injection-locking technique. We used a mode-locked Ti:sapphire laser as a master laser and a single-mode diode laser as a slave laser. After passing through the interference filter with the center wavelength 794.7 nm and the transmittance bandwidth 1.5 nm, the optical frequency comb by mode-locked femto-second laser was injected into the slave laser. The injection-locked slave laser had $3{\sim}4$ multi-mode with the mode spacing 100.5 MHz, whichcorrespond to the repetition rate of a mode-locked Ti:sapphire laser. The power of the modes selected by femto-second laser injection-locking technique was amplified to several thousands times

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.401-408
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• 2001

This paper shows the design, fabrication and performance analysis of VCO which plays a major role in 5.8 GHz RF module for ITS. The design specifications of the VCO are determined on the basis of 5.8 GHz RF modul performance requirements. The design parameters are optimized through ADS simulation tool. The operating characteristic and performance analysis of the implemented VCO based on the design parameters are accomplished. The frequency variations according to the voltage change(0 ~5 V) of varactor diode are from 5.42 GHz to 5.518 GHz and the power level is 6.5 dBm. The second harmonic suppression are -21.5 dBc at 5.51 GHz and the phase noise characteristics are -83.81 dBc at 10 kHz offset frequency. The implemented VCO is available to not only DSRC and also, 5.8 GHz other systems.