• Title/Summary/Keyword: Post-etching

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Nanotexturing and Post-Etching for Diamond Wire Sawn Multicrystalline Silicon Solar Cell (다이아몬드 와이어에 의해 절단된 다결정 실리콘 태양전지의 나노텍스쳐링 및 후속 식각 연구)

  • Kim, Myeong-Hyun;Song, Jae-Won;Nam, Yoon-Ho;Kim, Dong-Hyung;Yu, Si-Young;Moon, Hwan-Gyun;Yoo, Bong-Young;Lee, Jung-Ho
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.301-306
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    • 2016
  • The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.

Controllable Etching of 2-Dimentional Hexagonal Boron Nitride by Using Oxygen Capacitively Coupled Plasma

  • Qu, Deshun;Yoo, Won Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.170-170
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    • 2013
  • We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

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A study of Luminescence effects of POF-woven Fabric Display by Method of Weaving (직물화 방식에 따른 유연 광섬유 직물 디스플레이의 광원 색채별 발광효과에 관한 연구)

  • Yang, Jin-Hee;Park, Sun-Hyung;Cho, Hyun-Seung;Lee, Joo-Hyeon
    • Science of Emotion and Sensibility
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    • v.16 no.4
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    • pp.517-526
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    • 2013
  • This paper reports on flexible plastic optical fiber (POF) fabric displays which are used to develop light-emitting clothing from photonic fabric. We first evaluated the luminescence value corresponding to different methods of processing flexible optical fibers, types of reflective fabric structure, and colors of the light. Moreover, we tried to identify the optimum conditions of the flexible POF fabric displays to realize high luminescence value. The processing methods that were compared were the "Pre-etching" method and the "Post-etching" method. On the basis of the reflective structure of the fabric, the fabrics were categorized as the "White fabric" and the "Reflective fabric." Analysis results showed that the effect of the processing method is more dominant than that of the types of reflective fabric structure. Further, the capability of the Post-etching method to increase luminescence value is slightly higher than that of the Pre-etching method. Further, the 'Reflective fabric' is slightly more efficacious as the base fabric to increase the luminescence value, than the White fabric is. Thus, optimum increase in luminance can be realized by employing the Post-etching method and the Reflective fabric as the base fabric.

A simplified etching technique to improve the adhesion of fiber post

  • Majeti, Chandrakanth;Veeramachaneni, Chandrasekhar;Morisetty, Pradeep Kumar;Rao, Saggurti Anitha;Tummala, Muralidhar
    • The Journal of Advanced Prosthodontics
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    • v.6 no.4
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    • pp.295-301
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    • 2014
  • PURPOSE. Numerous methods were used to etch the fiber posts to improve its bonding to root canal dentin. Our aim was to evaluate the efficacy of 37% phosphoric acid in etching fiber posts in comparison with 24% hydrogen peroxide. MATERIALS AND METHODS. Ninety human maxillary central incisors were taken and post space preparation was done. Ninety fiber posts were taken and divided into three groups (n=30) based on the surface treatment they received ($H_3PO_4$, $H_2O_2$, distilled water) and each group was further divided (n=10) based on the time period of application (15 seconds, 30 seconds, 60 seconds). All the posts were luted into canals using Rely X UniCem-2. Each tooth was then sectioned into six slices and subjected to push out test. Data obtained was subjected to statistical analysis at P<.05. The surface topography was evaluated using scanning electron microscopy. RESULTS. Highest bond strength values were noted in 15 seconds etched phosphoric acid group and 60 seconds etched hydrogen peroxide group with no significant difference between two groups. Surface topography revealed complete epoxy layer removal with no damage to its structural integrity in those groups. CONCLUSION. $H_3PO_4$ etching for a period of 15 seconds is an effective alternative in improving the adhesion of fiber post to root dentin.

Effects of hydrogen peroxide pretreatment and heat activation of silane on the shear bond strength of fiber-reinforced composite posts to resin cement

  • Pyun, Jung-Hoon;Shin, Tae-Bong;Lee, Joo-Hee;Ahn, Kang-Min;Kim, Tae-Hyung;Cha, Hyun-Suk
    • The Journal of Advanced Prosthodontics
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    • v.8 no.2
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    • pp.94-100
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    • 2016
  • PURPOSE. To evaluate the effects of hydrogen peroxide pretreatment and heat activation of silane on the shear bond strength of fiber-reinforced composite posts to resin cement. MATERIALS AND METHODS. The specimens were prepared to evaluate the bond strength of epoxy resin-based fiber posts (D.T. Light-Post) to dual-curing resin cement (RelyX U200). The specimens were divided into four groups (n=18) according to different surface treatments: group 1, no treatment; group 2, silanization; group 3, silanization after hydrogen peroxide etching; group 4, silanization with warm drying at $80^{\circ}C$ after hydrogen peroxide etching. After storage of the specimens in distilled water at $37^{\circ}C$ for 24 hours, the shear bond strength (in MPa) between the fiber post and resin cement was measured using a universal testing machine. The fractured surface of the fiber post was examined using scanning electron microscopy. Data were analyzed using one-way ANOVA and post-hoc analysis with Tukey's HSD test (${\alpha}=0.05$). RESULTS. Silanization of the fiber post (Group 2) significantly increased the bond strength in comparison with the non treated control (Group 1) (P<.05). Heat drying after silanization also significantly increased the bond strength (Group 3 and 4) (P<.05). However, no effect was determined for hydrogen peroxide etching before applying silane agent (Group 2 and 3) (P>.05). CONCLUSION. Fiber post silanization and subsequent heat treatment ($80^{\circ}C$) with warm air blower can be beneficial in clinical post cementation. However, hydrogen peroxide etching prior to silanization was not effective in this study.

Engineering of Bi-/Mono-layer Graphene Film Using Reactive Ion Etching

  • Irannejad, M.;Alyalak, W.;Burzhuev, S.;Brzezinski, A.;Yavuz, M.;Cui, B.
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.169-172
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    • 2015
  • Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.

Effects of $C_2F_{6}$ Gas on Via Etching Characteristics ($C_2F_{6}$ 가스가 Via Etching 특성에 미치는 영향)

  • Ryu, Ji-Hyeong;Park, Jae-Don;Yun, Gi-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.31-38
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    • 2002
  • In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.

A STUDY FOR THE BONDING STRENGTH OF COMPOSITE RESIN CORE TO GLASS FIBER POST (Glass Fiber Post와 Composite Resin Core의 전단결합강도)

  • Kim Tae-Hyoung;Shim June-Sung;Lee Keun-Woo
    • The Journal of Korean Academy of Prosthodontics
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    • v.43 no.4
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    • pp.415-425
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    • 2005
  • Statement of problem : Fracture of composite resin core will be occulted by progress of crack. Bonding interface of different materials has large possibility of starting point of crack line. Therefore, the bond strength of glass fiber post to composite resin core is important for prevention of fracture. Purpose: This in vitro study tried to find out how to get the higher strength of glass fiber post to composite resin core through surveying the maximum load that fractures the post and cote complex. Materials and methods: 40 specimens made with glass fiber Posts(Style $post^{(R)}$, Metalor, Swiss) and composite resin core ($Z-100^{(R)}$, 3M, USA) were prepared and loaded to failure with push-out type shear-bond strength test in a universal test machine. The maximum fracture load and fracture mode were investigated in the specimens that were restored with four different surface treatments. With the data. ANOVA test was used to validate the significance between the test groups, and Bonferroni method was used to check if there is any significant statistical difference between each test group. Evely analysis was approved with 95% reliance. Results: On measuring the maximum fracture load of specimens, both the treatments of sandblasted and acid-etched one statistically showed the strength increase rather than the control group (p<0.005). The scanning electric microscope revealed that sand blasting made more micro-retention form not only on the resin matrix but on the glass fiber, and acid-etching contributed to increase in surface retention form, eliminated the inorganic particles in resin matrix. Specimen fracture modes investigation represented that sand blasted groups showed lower bonding failure than no-sand blasted groups. Conclusion: Referring to the values of maximum fracture load of specimens, the bonding strength was increased by sand blasting and acid-etching.

Effect of Pre/Post-Treatment on the Performance of Cu(In,Ga)(S,Se)2 Absorber Layer Manufactured in a Two-Step Process (KCN 에칭 및 CdS 후열처리가 Cu(In,Ga)(S,Se)2 광흡수층 성능에 미치는 영향)

  • Kim, A-Hyun;Lee, GyeongA;Jeon, Chan-Wook
    • New & Renewable Energy
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    • v.17 no.4
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    • pp.36-45
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    • 2021
  • To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.

Characterization of Combined Micro- and Nano-structure Silicon Solar Cells using a POCl3 Doping Process

  • Jeong, Chaehwan;Kim, Changheon;Lee, Jonghwan;Yi, Junsin;Lim, Sangwoo;Lee, Suk-Ho
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.69-72
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    • 2013
  • Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.