• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.43-44
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• 2005

SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image is desired. But SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination. Based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factional design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.191-194
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• 2005

SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.891-894
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• 2005

SU-8은 부드러운 벽면을 가지는 두꺼운 패턴을 제작하는 데 사용되는 음성 감광제(negative photoresist)이다 .이것은 처리 후에 강성이 높고 화학적으로 강인한 장점을 가지고 있으며 최근 MEMS 디바이스의 구조체로 쓰이고 있다. 그러나 SU-8은 공정 처리요소들에 대하여 매우 민감하고 사용하기 어려운 것으로 알려져 있다. 본 연구에서는 공정 처리요소로 exposure energy, post exposure bake (PEB) temperature, PEB time을 조절하여 실험을 하였다. Response Surface Methodology (RSM)를 이용해 각 인자가 delamination에 미치는 영향에 대해 분석하였고 이를 바탕으로 SU-8의 delamination을 최소화하기 위한 처리요소들의 최적화 방안을 제시하였다.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.135-139
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• 2005

In this paper, negative SU-8 photoresist processed at low temperature is characterized in terms of delamination. Based on a $3^3$ factorial designed experiment, 27 samples are fabricated, and the degree of delamination is measured for each. In addition, nine samples are fabricated for the purpose of verification. Employing the. neural network modeling technique, a process model is established, and response surfaces are generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. From the response surfaces generated, two significant parameters associated with delamination are identified, and their effects on delamination are analyzed. Higher PEB temperature at a fixed PEB time results in a greater degree of delamination. In addition, a higher dose of exposure energy lowers the temperature at which the delamination begins and also results in a larger degree of delamination. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• 전자공학회논문지D
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• 제36D권10호
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• pp.23-30
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• 1999

본 논문에서는 전자선 직접 묘화 시스템을 이용하여 50 nm 이하의 패턴 폭을 가지는 패터닝 결과를 얻기 위한 실험을 수행하였다. SAL601 negative E-beam PR(Photo Resist)를 이용하여 실험을 진행하였고, E-beam 장비의 특성을 최대로 이용하기 위해서 PR의 두께를 100nm로 줄이고, field 크기를 200 ${um}m$로 줄여 실험하였으며, 또한 SAL601 PR의 경우 작은 선폭을 얻기 위해 중요한 요인 중에 하나인 PEB (Post Expose Bake) 온도와 시간을 줄이면서 실험을 진행하였다. 여기에 디지타이징 방식의 최적화를 통하여 50 nm 이하의 패턴 폭을 가지는 단선 패터닝 결과를 얻었다. 이 공정을 이용하여 단전자 메모리 소자에 응용 가능한 50 nm 급의 silicon 양자선과 silicon 양자점을 제작하였다. 이는 현재 많이 연구되고 있는 단전자 기억소자 및 국소 채널 MOS소자 제작에 유용할 것이다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.143-144
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• 2006

In this paper, we proposed XP KMPR-1050 negative tone resist to replace SU-8 resist for multi-layer micro-structures and thick plating mold fabrication using UV-LIGA process. XP KMPR resist proposed in this paper can be easily striped using a common stripping solution such as NMP without damage of micro-structure. The conditions for the fabrication of XP KMPR micro-structure were optimized by adjustment of exposure and post-exposure bake(PEB). The $140{\mu}m$ -thick and an aspect ratio at least 10 micro-structure and multi-layer structures were successfully fabricated through the process conditions. Through-mold electroplating and PR striping of XP KMPR has been successfully demonstrated.