• 한국의류학회지
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• 제35권4호
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• pp.466-475
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• 2011

The dyeing properties of protein fiber with pine needles colorants were studied through an investigation of the effect of dyeing conditions such as dye concentration, dyeing temperatures and time on dye uptakes, effect of mordants, and color change. In addition, the various colorfastness of dyed silk and wool fabrics were evaluated for practical use. The antimicrobial ability, ultraviolet-cut ability, and deodorant ability were also estimated. The dye uptake increased as the dyeing concentration increased and this enabled the obtainment of the Langmuir absorption isotherm. The dye uptake increased as the dyeing time and temperature increased. Pine needles colorants showed relatively good affinity to protein fiber and produced a yellow color. Post-mordanting was more effective than the pre-mordanting, and the dye uptake of fabrics improved by mordanting. Except for washing, the colorfastness of dyed fabrics showed a low rating. However, the colorfastness to light and the dry cleaning of fabrics mordanted with N.Cu, and the friction fastness of fabrics mordanted with Cu improved. The guide fabrics showed very good antimicrobial abilities of 99.9%; in addition, the ultraviolet-cut ability and deodorant ability improved in fabrics dyed with pine needles extracts.

• 한국염색가공학회지
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• 제32권2호
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• pp.89-95
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• 2020

In this study, the efficacy of Amaranth(Amaranthus spp. L.) as a natural dye resource was investigated for wool fabrics. It is known that a large amount of flavonoid and anthocyanin colorant are contained in leaves and stems, as well as red flowers. The optimum condition of dyeing was 1.3% of dye concentration(o.w.b.) at 100℃ for 60 minutes, resulting the K/S value, 23.43 and R Munsell color on the wool fabrics. Al, Fe, Zinc and Titanium were used as a mordant. The mordant improved the dye uptake, regardless of the mordant type and mordant method. The pre-mordanting method was more effective than the post-mordanting method. Al pre-mordanted fabric showed the highest K/S, 30.02. Light fastness and washing fastness were high in grades 4-5 and 5, and rubbing fastness was good in grades 4 and 4-5 in dry condition, but low in grades 2-3 and 3 in wet condition. The dry cleaning fastness was excellent in all 5 grades. However, the alkaline perspiration fastness ratings were low in grades 2-3 and 3. The results show Amaranthus spp. L. colorant can be used as a functional natural dye for wool fabrics.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.63-66
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• 1999

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. Low-dielectric Sr$_2AITaO_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2Cu_3O_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the bottom YBCO edge using plasma treatment prior to deposition of the top YBCO electrode. We investigated the effects of pre-annealing and post-annealing on the characteristics of the interface-treated Josephson junctions. The junction parameters were improved by using in-situ RF plasma cleaning treatment.

• 한국진공학회지
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• 제8권4B호
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• pp.514-518
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• 1999

Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.171-174
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• 2000

We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), $O_3$ boro-phospho silicate giass( $O_3$-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished $O_3$-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• 한국정밀공학회지
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• 제21권10호
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• pp.26-33
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• 2004

Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• 한국의류학회지
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• 제26권9호
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• pp.1301-1307
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• 2002

This paper surveys the mordanting and dyeing properties of Rubia akane Nakai appropriate extraction, dyeing and mordanting conditions of Rubia akane Nakai were determined, and the effect of mordanting method on dye uptake and color fastness of the dyed fabric was investigated. The optimum temperature to extract Rubia akane Nakai was during 1 hour in 8$0^{\circ}C$. The effective dyeing temperature and time of silk were 8$0^{\circ}C$, 1hour. The silk fabrics dyed with purpurin appeared red color, with alizarine appeared yellow-brown and with Rubia akane Nakai appeared yellow orange. K/S value of the dyeing fabrics was increased by pre-mordanting treatment. Mordant as Sn and Fe was better than anything else in K/S value. Mordanting treatment method affected color change of the dyed silk. In the case of Rubia akane Ntkai light fastness was increased by Fe and Al mordant treatment, Perspiration fastness of Rubia akane Nakai appeared more than 3 grades geneally. Fastness of abrasion and dry-cleaning appeared mon than 4～5 grades and these fastness improvement were generally effective for post-mordanting treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.