• 한국표면공학회지
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• 제43권5호
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• pp.217-223
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• 2010

For an application as templates of high performance with proper pore size and shape, porous anodic alumina films were prepared by anodization in oxalic acid, and formation behaviors of anodic alumina layer as well as dissolution process in acid solution have been investigated. The surface characteristics on anodic alumina layer were shown to be dependent on the fabrication parameters for anodization. For the dissolution behaviors of anodic alumina, the thickness of the barrier-type alumina layer decreased linearly with the rate of 0.98 nm/min in $H_3PO_4$ solution at $30^{\circ}C$. The changes of the anodic alumina layers were analyzed by SEM and TEM.

• 한국재료학회지
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• 제12권2호
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• pp.121-128
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• 2002

Anodic alumina layer can be used as templates for preparation of nano-structured materials, because porous oxide layer on aluminum shows a uniform pore size and a high pore density. In order to find out possibility for template material to prepare nano wire, the effects of the anodic applied potential, anodic time and the temperature of electrolyte on pore diameter of anodic alumina layer were studied using SEM and AFM. The pore diameter of anodic alumina layer increased with applied anodic potential and electrolytic temperature. Especially, the pore diameter of anodic oxide layers formed in chromic acid can be well replicated by widening process in $H_3$$PO_4$solution.

• 한국표면공학회지
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• 제43권5호
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• pp.248-254
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• 2010

Porous $Al_2O_3$ film can be utilized as template for fabrication of nano-structured materials. Porous anodic alumina layer as template was prepared by anodization of aluminum in oxalic acid, and the pore diameter and barrier-type alumina layer can be controlled for proper anodizing parameter by widening process in $H_3PO_4$ solution. The $SiO_2$ nanodot and Ni nanowire was fabricated using anodic alumina template and their characteristics were investigated using SEM and TEM with EDS. Especially the growth mechanism of $SiO_2$ nanodot in alumina membrane compared with thinning of the alumina barrier layer during anodization was also investigated.

• 환경위생공학
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• 제13권3호
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• pp.72-78
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• 1998

For investigation into gas permeation characteristics, the porous alumina membrane with asymmetrical structure, having upper layer with 10 nanometer under of pore diameter and lower layer with 36 nanometer of pore diameter, was prepared by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. The aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. Because the pore size depended upon the electrolyte, electrolyte concentration, temperature, current density, and so on, the the membranes were prepared by controling the current density, as a very low current density for upper layer of membrane and a high current density for lower layer of membrane. By control of current quantity, the thicknesses of upper layer of membranes were about $6{\;}{\mu}m$ and the total thicknesses of membranes were about $80-90{\;}{\mu}m$. We found that the mechanism of gas permeation depended on model of the Knudsen flow for the membrane prepared at each condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.625-628
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• 2004

Porous anodic alumina(PAA) which has arrays of nano size holes, was incorporated into organic light emitting devices. Porous anodic alumina on glass scattered the light generated from emitting layer and was decreased the waveguiding modes within the glass. An increase in the device coupling-out factor for the scattering structure is demonstrated.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.16.2-16.2
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• 2006

• 한국재료학회지
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• 제12권11호
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• pp.856-859
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• 2002

To investigate effects of heat treatments including grain size control in substrate aluminum on nanopore arrays in anodic alumina template, aluminum was heat treated at $500^{\circ}C$ for 1h. The heat treated aluminum was anodized by two successive anodization processes in oxalic solution and the nanopore arrays in anodic alumina layer were studied using TEM and FE-SEM. The highly ordered porous alumina templates with 110 nm interpore distance and 40 nm pore diameter have been observed and the pore array of the anodic alumina has a uniform and closely-packed honeycomb structure. In the case of alumina template obtained from heat treated aluminum substrate, the well- ordered nanopore region in anodic alumina increased and became more homogeneous compared with that from non-heattreated one.

• 한국재료학회지
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• 제12권7호
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• pp.533-539
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• 2002

Porous anodic aluminum oxide layer for nano templates was prepared in acidic solutions. In order to investigate effects of 2nd anodization on ordered formation behaviors of the porous oxide layers, electrochemical and microstructural studies were performed, primarily using TEM, FE- SEM, AFM, and Ultramicrotomy. The pore diameter of the anodic oxide layer increased approximately linearly with increasing voltages, and to the contrary, the pore density decreased. It was shown that 2nd anodizing on the cell base after dissolving 1st anodic oxide layer was remarkably effective for forming ordered array of the pores, comparing with the case for 1st anodization only. And for controlling the diameter of pores, widening method by chemical dissolution seemed more practical than by electrochemical methods.

• 공업화학
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• 제10권2호
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• pp.212-217
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• 1999

기체투과 특성을 관찰하기 위해 양극산화에 의해 세공직경의 크기가 서로 다른 상부층과 하부층으로 이루어진 이중기하구조의 다공성 알루미나막을 제조하였다. 양극산화는 황산 전해질 하에서 직류에 의한 정전류법으로 행하였으며, 양질의 막을 얻기 위해 열산화, 화학연마, 전해연마 등의 전처리를 한 후 양극산화를 행하였다. 양극산화에 의한 알루미나 막의 제조에서 세공직경은 전해질의 종류 및 농도, 전해 온도, 전류밀도 등에 의존하는데, 전류밀도를 극도로 낮추어 세공직경이 20 nm 이하인 상부층을 제조하고 전류밀도를 높여서 세공직경이 36 nm인 하부층을 제조하였다. 막의 두께는 전기량에 의해 조절되어 상부층의 두께는 약 $6{\mu}m$이었으며 하부층을 포함하는 막의 총 두께는 약 $80{\sim}90{\mu}m$로 제조되었다. 제조된 막은 가압법에 의한 기체투과 실험을 행하였다. 제조된 막의 기체투과 기구는 Knudsen 흐름을 따르는 것을 확인하였다.

• 한국재료학회지
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• 제14권2호
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively