• 제목/요약/키워드: Porous Silicon(PS)

검색결과 32건 처리시간 0.03초

대기중에서 aged된 다공성 실리콘의 2가지 발광 band에 관한 연구 (On the study of two luminescence band structfue from ambient air aged porous silicon)

  • Sung-Sik Chang;Akira Sakai
    • 한국결정성장학회지
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    • 제6권4호
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    • pp.564-570
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    • 1996
  • 급속 열산화 없이 다공성 실리콘으로부터 적색 및 청색 발광을 관찰할 수 있었다. 묽은 HF 농도에서, 특히 짧은 양극 산화 북식으로제조한 aged 된 다공성 실리콘은 청색band 의 증가를 나타내었다. 상온에서 측정된 발광 decay 시간은 약 100 ps를 나타내었고 20K에서 측정된 값에 비하여 상당히 빠른 값을 지니고 있었다. 청색 광발광 peak 최대값은 액체질소온도에서 청색전이를 나타내지 않았다. 그러나 적색 광발광 band는 77K 에서 적색으로 전이를 하였고 황색을 나타내었다. 적색 발광의 origin은 Si 결정과 연관이 있는 것으로 사료되어지는 한편 청색 발광은 Si결정과 무관한 것으로 생각되어 진다.

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다공질 실리콘 구조를 이용한 화학 및 바이오 센서 (Porous silicon-based chemical and biosensors)

  • 김윤호;박은진;최우석;홍석인;민남기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2410-2412
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    • 2005
  • In this study, two types of PS substrate were fabricated for sensing of chemical and biological substances. For sensing of the humidity and chemical analyzes such as $CH_3OH$ or $C_2H_5OH$, PS layers are prepared by photoelectrochemical etching of silicon wafer in aqueous hydrofluoric acid solution. To evaluate their sensitivity, we measured the resistance variation of the PS diaphragm. As the amplitude of applied voltage increases from 2 to 6Vpp at constant frequency of 5kHz, the resistance variation for humidity sensor rises from 376.3 to $784.8{\Omega}$/%RH. And the sensitivities for $CH_3OH$ and $C_2H_5OH$ were 0.068 uA/% and 0.212 uA/%, respectively. For biological sensing application, amperometric urea sensors were fabricated based on porous silicon(PS), and planar silicon(PLS) electrode substrates by the electrochemical methods. Pt thin film was sputtered on these substrates which were previously formed by electrochemical anodization. Poly (3-methylthiophene) (P3MT) were used for electron transfer matrix between urease(Urs) and the electrode phase, and Urs also was by electrochemically immobilized. Effective working area of these electrodes was determined for the first time by using $Fe(CN)_6^{3-}/Fe(CN)_6^{4-}$ redox couple in which nearly reversible cyclic voltammograms were obtained. The $i_p$ vs $v^{1/2}$ plots show that effective working electrode area of the PS-based Pt thin film electrode was 1.6 times larger than the PLS-based one and we can readily expect the enlarged surface area of PS electrode would result in increased sensitivity by ca. 1.6 times. Actually, amperometric sensitivity of the Urs/P3MT/Pt/PS electrode was ca 0.91uA/$mM{\cdot}cm^2$, and that of the Urs/P3MT/Pt/PLS electrode was ca. 0.91uA/$mM{\cdot}cm^2$ in a linear range of 1mmol/L to 100mmol/L urea concentrations

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다공질 실리콘의 광발광에 관한 계면활성제 PDFO 효과 (Effects of Surfactant PDFO on Photoluminescence of Porous Silicon)

  • 김범석;윤정현;배상은;이치우;오원진;이근우
    • 전기화학회지
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    • 제4권1호
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    • pp.10-13
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    • 2001
  • 광전기화학적 양극 산화법으로 다공질 실리콘 (porous silicon, PS)을 제조할 때 전해질에 음이온성 계면활성제의 한 종류인 Pentadecafluorooctanoic acid (PDFO)를 첨가하여 제조한 PS의 광발광(photoluminescence, PL)의 변화를 조사하였다. 사용한 웨이퍼는 비저항이 $0.4\~0.8{\Omega}{\cdot}cm$인 n-형 단결정 실리콘 (100)이었으며, 일정전위 4V를 600초 동안 걸어주어 다공성 실리콘을 제조하였다. 이 때 나타난 PL의 변화는 첨가한 계면활성제의 농도가 1mM에서 50mM로 증가함에 따라서 PL의 중심파장이 600nm에서 550nm로 단파장 이동함을 보여주었으며, PL의 세기는 감소함을 보여주었다. FT-IR을 사용하여 에칭된 다공성 실리콘 위에 PDFO가 존재함을 알 수 있었고 Goniometer를 사용한 물방울 각도 측정을 통해서 생성된 표면이 소수성임을 알 수 있었다. 이로부터 계면활성제의 소수성 부분인 포화탄화불소 사슬 부분이 표면에 전체적으로 누워있다고 유추하였다.

열처리 온도 및 분위기에 따른 다공질 실리콘의 구조 및 광학적 특성 (Effects of Annealing Temperature and Atmosphere on Properties of Porous Silicon)

  • 최현영;임광국;전수민;조민영;김군식;김민수;이동율;김진수;김종수;임재영
    • 한국전기전자재료학회논문지
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    • 제23권8호
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    • pp.581-586
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    • 2010
  • The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to $800^{\circ}C$. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

Photoluminescence Studies of ZnO Thin Films on Porous Silicon Grown by Plasma-Assisted Molecular Beam Epitaxy

  • Kim, Min-Su;Nam, Gi-Woong;Kim, So-A-Ram;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Son, Jeong-Sik;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.310-310
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    • 2012
  • ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

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Photoluminescence Tuning of Porous Silicon by Electrochemical Etching in Mixed Electrolytes

  • Lee, Ki-Hwan;Jeon, Ki-Seok;Lee, Seung-Koo;Choi, Chang-Shik
    • Journal of Photoscience
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    • 제10권3호
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    • pp.257-261
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    • 2003
  • We have systematically studied the evolution of the photoluminescence(PL) tuning of porous silicon(PS) by electrochemical etching in various mixed electrolytes. The electrolytes employed as an etchants were mixtures of HF:CH$_3$COOH:HNO$_3$:C$_2$H$\_$5/OH solutions where the composition ratios (%) were varied from 10:1.98:0:88.02 to 10: 1.98:8.4:79.62 under constant concentration of HF and CH$_3$COOH with a total volume of 100 ml. Changes in the surface morphology of the samples caused by variations in the etching process were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). After samples are etched in various mixed electrolytes, FTIR analyses show that there is the non-photoluminescent state and the photoluminescent state simultaneously. The PL spectra show the PL tuning in the ranging from 560 to 700 nm with the increase of HNO$_3$ concentration. An analysis of the subsequent PL relaxation mechanism was carried out by time-correlated single photon counting (TCSPC) method. Based on experimental results, it is assumed that a red shift of the main PL peak position is related to the HNO$_3$ activated formation of silicon oxygen compounds. Therefore, the use of electrolyte mixtures with composition ratios can be obtained adequate and reproducible results for PL tuning.

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초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭 (Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication)

  • 이주영;한원근;이재호
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.55-60
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    • 2009
  • 불산과 에탄올 혼합용액에서 전기화학적 에칭을 통하여 다공성 실리콘 층을 제작하였다. 에칭 시 인가된 초음파의 주파수, 전류밀도, 에칭시간의 변화에 따른 다공성 실리콘 층의 변화를 확인하였다. 초음파를 가해주지 않은 시편은 표면에 특별한 변화가 일어나지 않았으나, 초음파 진동자의 주파수가 40 kHz와 130 kHz인 초음파 발생조에서 실험한 시편을 관찰한 결과, 가해준 초음파의 주파수가 높을수록 다공성 실리콘 층의 기공의 크기가 더 커지고 실리콘 표면에서의 에칭이 더 균일하게 일어났다. 후면접촉 에칭조와 current shield를 이용한 결과 다공성 실리콘 층 전면에 걸쳐 균일하게 기공이 발생하였다. 다공성 실리콘 층의 기공의 크기는 전류밀도가 증가함에 따라 함께 증가하였고, 에칭 시간에는 영향을 받지 않았다.

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Invention of Ultralow - n SiO2 Thin Films

  • Dung, Mai Xuan;Lee, June-Key;Soun, Woo-Sik;Jeong, Hyun-Dam
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.281-281
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    • 2010
  • Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

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상온에서 측정 가능한 음주 측정용 알코올 가스 센서 (Development of alcohol gas sensors measurable at room temperature)

  • 전병현;이중혁;김성진;이철진;최복길
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 G
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    • pp.3265-3267
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    • 1999
  • Capacitance-type alcohol gas sensors using porous silicon (PS) layer as sensitive film were fabricated to measure low alcohol gas concentration. Though sensors using porous silicon layer have show high sensitivity by large internal surface area, there is still much room for improvement to measure low breath alcohol concentration especially at room temperature. In this work, to discuss the response properties against exposure to organic vapor for breath alcohol measurements on the basis of experimental results. we measured the variation of the capacitance for the range of 0 to 0.5% alcohol concentration, and observed the improvement of sensitivity by illumination of UV light. In addition, the effect of CO2 and N2 gases involved commonly in exhaling breath was estimated, and the same procedure against methanol vapor was executed to compare qualitatively with the capacitance characteristics by alcohol vapor.

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Ultralow-n SiO2 Thin Films Synthesized Using Organic Nanoparticles Template

  • Dung, Mai Xuan;Lee, June-Key;Soun, Woo-Sik;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • 제31권12호
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    • pp.3593-3599
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    • 2010
  • In an original effort, this lab attempted to employ polystyrene nanoparticles as a template for the synthesis of ordered and highly porous macroporous $SiO_2$ thin films, utilizing their high combustion temperature and narrow size distribution. However, polystyrene nanoparticle thin films were not obtained due to the low interaction between individual particles and between the particle and silicon substrate. However, polystyrene-polyacrylic acid (PS-AA) colloidal particles of a core-shell structure were synthesized by a one-pot miniemulsion polymerization approach, with hydrophilic polyacrylic acid tails on the particle surface that improved interaction between individual particles and between the particle and silicon substrate. The PS-AA thin films were spin-coated in the thickness ranges from monolayer to approximately $1.0\;{\mu}m$. Using the PS-AA thin films as sacrificial templates, macroporous $SiO_2$ thin films were successfully synthesized by vapor deposition or conventional solution sol-gel infiltration methods. Inspection with field emission scanning electron microscopy (FE-SEM) showed that the macroporous $SiO_2$ thin films consist of interconnected air balls (~100 nm). Typical macroporous $SiO_2$ thin films showed ultralow refractive indices ranging from 1.098 to 1.138 at 633 nm, according to the infiltration conditions, which were confirmed by spectroscopy ellipsometry (SE) measurements. This research shows how the synthetic control of the macromolecule such as hydrophilic polystyrene nanopaticles and silicate sol precursors innovates the optical properties and processabilities for actual applications.