• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.124.1-124.1
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• 2016

In this work, uniform thickness and good adhesion of electrodeposited copper layer were achieved on AZ91 Mg alloy in alkaline noncyanide copper solution containing pyrophosphate ion by employing appropriate zincate pretreatment. Without zincate pretreatment, the electrodeposited copper layer on AZ91 Mg alloy was porous and showed poor adhesion which was explained by small number of nucleation sites of copper due to rapid dissolution of the magnesium substrate in the pyrophosphate solution. The zincate pretreatment was found as one of the most important steps that can form a conducting layer to cover AZ91 surface which decreased the dissolution rate of AZ91 Mg alloy about 40 times in the copper pyrophosphate solution. Electrodeposited copper layer on AZ91 Mg alloy after an appropriate zincate pretreatment showed good adhesion and uniform thickness with bright surface appearance, independent of the deposition time but the surface roughness of the electrodeposited copper layer increased with increasing Cu deposition time.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.544-551
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• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.222-224
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• 2006

A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.6 no.1
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• pp.13-26
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• 2001

Six ferromanganese crusts from the Lomilik and Litatfooki seamounts in the Marshall Islands were analyzed for texture, geochemistry and stratigraphy to delineate the paleoceanographic conditions. The crusts can be divided into three layers; 1) outermost massive layer (Layer 1), 2) middle porous Fe-oxides rich layer infllled with biointemal clasts (Layer 2), and 3) innermost massive layer cemented and/or replaced by carbonate fluoapatite (CFA) (Layer 3). The Layer 1 contains higher Mn, Co, Ni, and Mg than other two layers, and the Layer 2 was relatively more enriched in Fe, Al, Ti, Ba, Cu, and Zn. However, the Layer 3 shows higher Ca and P and lower Mn, Fe, Co, and Ni contents than overlying two layers. Based on the Co-chronometry, the crusts are postulated to have begun to grow from 56-31 Ma (early Eocene to Oligocene). The boundaries between layers 1 and 2, and layers 2 and 3 are dated to be 7-3 Ma and 26-14 Ma, respectively. High contents of Ca and P in Layer 3 clearly indicate that the layer had been phosphatized prior to the formation of Layer 2. Considering the well-preserved mjcrostructures in Layer 3, it is unlike that the crusts themselves were recrystallized in suboxic condition. Also, the lower Co concentrations in Layer 3 may imply that the Co supply was not constant during the formation of Layer 3. Layer 2, characterized by the porous texture, grew over Layer 3 during 26-9 Ma. Internal biogenic sediments including foraminifera within the original cavities and the enrichment of organophillic elements such as Ba, Cu, and Zn, suggest that Layer 2 have below high production regions. Also, high content of allumino silicate components may indicate increased terrigeneous input during the formation of Layer 2. The Layer 2. The Layer 1 has been subjected to little diagenetic influence since the Pliocene.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Journal of Powder Materials
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• v.24 no.2
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• pp.102-107
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• 2017

Porous polytetrafluoroethylene (PTFE) thin films are fabricated by spin-coating using a dispersion solution containing PTFE powders, and their crystalline properties are investigated after thermal annealing at various temperatures ranging from 300 to $500^{\circ}C$. Before thermal annealing, the film is densely packed and consists of many granular particles 200-300 nm in diameter. However, after thermal annealing, the film contains many voids and fibrous grains on the surface. In addition, the film thickness decreases after thermal annealing owing to evaporation of the surfactant, binder, and solvent composing the PTFE dispersion solution. The film thickness is systematically controlled from 2 to $6.5{\mu}m$ by decreasing the spin speed from 1,500 to 500 rpm. A triboelectric nanogenerator is fabricated by spin-coating PTFE thin films onto polished Cu foils, where they act as an active layer to convert mechanical energy to electrical energy. A triboelectric nanogenerator consisting of a PTFE layer and Al metal foil pair shows typical output characteristics, exhibiting positive and negative peaks during applied strain and relief cycles due to charging and discharging of electrical charge carriers. Further, the voltage and current outputs increase with increasing strain cycle owing to accumulation of electrical charge carriers during charge-discharge.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.11-22
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• 2015

Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.1
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• pp.61-69
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• 2001

Polycarbonate(PC) membranes for oxygen enrichment from air were prepared by the wet phase inversion method. In order to improve oxygen separation performances of the PC membrane, the effect of the added ethanol(nonsolvent) and $CuCl_2$(metal salt) concentration in the casting solution on morphology, oxygen permeability ami $O_2/N_2$ separation factor of the membrane was studied. In addition, tensile strength and elongation at break of the membrane were investigated. An asymmetric membrane with a dense top layer and a porous sublayer was obtained. The thickness of the dense top layer decreased with increasing amount of nonsolvent additive. Compared with pure PC membrane without additive(metal salt), the oxygen permeability and $O_2/N_2$ separation factor of the $PC/CuCl_2$ membrane are significantly improved. The oxygen permeability and $O_2/N_2$ separation factor is $5.25{\times}10^{-9}cm^3(STP){\cdot}cm/cm^2{\cdot}sec{\cdot}cmHg$ and 4.5, respectively. This improvement might be due to good interaction between metal salt and oxygen.