• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.81-85
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• 2015

A method for degradation of the perchlorate anion ($ClO{_4}^-$) has been studied using electrochemically generated zero-valent iron (ZVI) deposited on a porous carbon electrode. The first strategy of this study is to produce the ZVI via the electrochemical reduction of iron (II) on a porous carbon electrode coated with a conducting polymer, instead of employing expensive $NaBH_4$. The present method produced well distributed ZVI on conducting polymer (polypyrrole thin film) and increased surface area. ZVI surface can be regenerated easily for successive reduction. The second strategy is to apply a mild reducing condition (-0.3 V) to enhance the efficiency of the degradation of perchlorate with ZVI without the evolution of hydrogen. The electrochemically generated ZVI nanoparticles may offer an alternative means for the complete destruction perchlorate without evolution of hydrogen in water with high efficiency and at low cost.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.4
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• pp.92-102
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• 2003

To detect electrical faults of a TFT (Thin Film Transistor) panel for the LCD (Liquid Crystal Display), techniques of converting electric field to an image are used One of them is the PDLC (polymer-dispersed liquid crystal) modulator which changes light transmittance under electric field. The advantage of PDLC modulator in the electric field detection is that it can be used without physically contacting the TFT panel surface. Specific pattern signals are applied to the data and gate electrodes of the panel to charge the pixel electrodes and the image sensor detects the change of transmittance of PDLC positioned in proximity distance above the pixel electrodes. The image represents the status of electric field reflected on the PDLC so that the characteristic of the PDLC itself plays an important role to accurately quantify the defects of TFT panel. In this paper, the image of the PDLC modulator caused by the change of electric field of the pixel electrodes on the TFT panel is acquired and how the characteristics of PDLC reflect the change of electric field to the image is analyzed. When the holding time of PDLC is short, better contrast of electric field image can be obtained by changing the instance of applying the driving voltage to the PDLC.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.1-59.1
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• 2012

Organic thin-film transistors (OTFTs) with printable semiconductors are promising candidate devices for flexible active-matrix (AM) display applications. Yet, stable operation of actual display panels driven by OTFTs has seldom been reported up to date. Here, we demonstrate a flexible reflective type polymer dispersed liquid crystal (PDLC) display, in which inkjet-printed OTFT arrays are used as driving elements with excellent areal uniformity in terms of device performance. As the active semiconductor, a novel, ambient processable conjugated copolymer was synthesized. The stability of the devices with respect to electrical bias stress was improved by applying a channel-passivation layer, which suppresses the environmental effects and hence reduces the density of trap states at the channel/dielectric interface. The combination of high performance and high stability OTFT devices enabled the successful realization of stable operating flexible color-displays by inkjet-printing.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.496-503
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• 1992

An ISFET urea sensor was fabricated by immobilizing the urease using photosensitive polymer, poly(vinyl alcohol)-SbQ on the H$^+$ sensing $Si_3$$N_4$ thin film of pH-ISFET. The sensor could determine the urea concentration in the range of 1∼50 mg/dl with fast response and good repeatability. For its application to clinical analysis, the interferences of the various materials which cause inhibition in urease catalytic reactions in blood was investigated. The results of the urea measurements in blood plasma using the ISFET urea sensor were compared with these of conventional spectrophotometric method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.568-573
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• 2006

We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.605-612
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• 1990

In Pb1-xLax(Zry, Tiz)1-x/4O3 system, it selects the composition 7/65/35 (x=7, y=65, z=35) that was reported to have eminent Pyroelectric properties, and that is sintered with PbZrO3＋0.3wt.% PbO2 atmosphere powder. From the sintered ceramic and Poly Vinyl Alcohol, the thin wafers are fabricated with 0-3connectivity, and they are researched in Pyroelectric properties and the others according to volume ratio between ceramic and polymer. It was possible to fabricate the film containing ceramic up to 80vol% in PVA polymer. The increment of PLZT ceramic volume fraction improve the pyroelectric coefficient of the composite. On Pyroelectric coefficient and the figure of merit, a little inflection caused by glass point(Tg) of PVA appeared. The degree of inflection is proportioned to the amount of PVA.

• Bulletin of the Korean Chemical Society
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• v.11 no.1
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• pp.11-15
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• 1990

The temperature dependence of electrical conductivities and thermoelectric power of $I_2$-doped poly(1,4-penylene vinylene-co-2,5-dimethoxy-1,4-phenylene vinylene)s [poly(PV-co-DMPV)] and poly(1,4-phenylene vinylene-co-2,5-thienylene vinylene)s [poly(PV-co-TV)] were studied. The former copolymers were also doped with $FeCl_3$. All the samples used were in thin film forms. The temperature dependence of electrical conductivity implies that the variable range hopping conduction mechanism applises to these systems. The activation energy for the electrical conduction in dimethoxy-phenylene vinylene (DMPV) copolymers ranged from about 7 to 30 meV depending on the polymer composition and the nature of the dopant. It was significantly higher for $I_2$-doped thienylene vinylene (TV) copolymers, namely 90-200 meV. The values of the room temperature thermoelectric power were $30-70{\mu}V/K$ for DMPV copolymer and $100-800{\mu}V/K$ for TV copolymers. Anisotropy in the electrical conductivities was also studied for oriented films obtained by uniaxial stretching of the precursor polymer films.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.23-29
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• 2013

Development of flexible electronic devices has primarily focused on printing technology using organic materials. However, organic-based flexible electronics have several disadvantages, including low electrical performance and long-term reliability. Therefore, we fabricated nano- and micro-thick silicon film attached to the polymer substrate using transfer printing technology to investigate the feasibility of silicon-based flexible electronic devices with high performance and high flexibility. Flexibility of the fabricated samples was investigated using bending and stretching tests. The failure bending radius of the 200 nm-thick silicon film attached on a PI substrate was 4.5 mm, and the failure stretching strain was 1.8%. The failure bending radius of the micro-thick silicon film attached on a FPCB was 2 mm, and the failure strain was 3.5%, which showed superior flexibility compared with conventional silicon material. Improved flexibility was attributed to a buffering effect of the adhesive between the silicon film and the substrate. The superior flexibility of the thin silicon film demonstrates the possibility for flexible electronic devices with high performance.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.188-194
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• 1999

We synthesized the nonlinear optical (NLO) PI-SOT(polyimide system, 4-[N,N-bis(hydroxyethyl)amino-4,-($\beta$-cyano-$\beta$-methylsulfonyl)vinyl]azobenzene) polymer with high electro-optic coefficients as well as good thermal and temporal stabilities of the elector-optic coefficient ${\gamma}_33$ by the simple Mitsunobu reaction. By using the simple reflection method of C. C. Teng, we measured the thermal and temporal stabilities of the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer at the wavelength of 632.8 nm and 852 nm, respectively. At the temperature of $20^{\circ}C$, the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer were 25.12 pm/V at the wavelength of 632.8 nm and 5.40 pm/V at the wavelength of 852 nm. These values were highly stabilized for more than 60 days at 2$0^{\circ}C$ and stabilized within 6% for more than 10 hours at $100^{\circ}C$.

• Journal of Radiation Industry
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• v.10 no.1
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• pp.1-5
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• 2016

In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.