• Title/Summary/Keyword: Polymer science

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Transverse Flow and Process Modeling on the Polymer Composite with 3-Dimensionally Stitched Woven Fabric

  • Lee, Geon-Woong;Lee, Sang-Soo;Park, Min;Kim, Junkyung;Soonho Lim
    • Macromolecular Research
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    • v.10 no.4
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    • pp.194-203
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    • 2002

  • In resin infusion process(RIP), the fiber and the resin are in contact with each other for an impregnation step and often results in flow-induced defects such as poor fiber wetting and void formation. Resin flow characteristics in transverse direction and process modeling for woven fabric were studied, and the process modeling was applied to the manufacturing of hybrid composite materials. This study also considered the compressibility of woven fabrics in a series of compression force, and it was fitted well to an elastic model equation. Void formation was varied with the processing conditions in the stage of manufacturing composites using RIP. It was concluded from this study that proper combination of pressure build-up and dynamic heating condition makes important factor for flow-induced composite processing.

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Effect of Curing Conditions of a Poly(4-vinylphenol) Gate Dielectric on the Performance of a Pentacene-based Thin Film Transistor

  • Hwang, Min-Kyu;Lee, Hwa-Sung;Jang, Yun-Seok;Cho, Jeong-Ho;Lee, Shic-Hoon;Kim, Do-Hwan;Cho, Kil-Won
    • Macromolecular Research
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    • v.17 no.6
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    • pp.436-440
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    • 2009

  • We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

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