• Bulletin of the Korean Chemical Society
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• 제27권9호
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• pp.1439-1444
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• 2006

A $Cu^{2+}$ ion-selective membrane microelectrode has been fabricated from poly vinyl chloride (PVC) matrix membrane containing a new symmetrical hexadentate Schiff,s base 2-{1-(E)-2-((Z)-2-{(E)-2-[(Z)-1-(2-hydroxyphenyl)ethylidene]hydrazono}-1-methylpropylidene)hydrazono]ethyl}phenol (HDNOS) as a neutral carrier, Potassium tetrakis(4-chlorophenyl) borate (KTpClPB) as an anionic excluder and o-nitrophenyloctyl ether (NPOE) as a plasticizing solvent mediator. The microelectrode displays linear potential response in the concentration range of $1.0\;{\times}\;10^{-5}-1.0\;{\times}\;10^{-11}$ M of $Cu^{2+}$. The microelectrode exhibits a nice Nernstian slope of 25.9 ${\pm}$ 0.3 mV $decade^{-1}$ in the pH range of 3.1-8.1. The sensor has a relatively short response time in whole concentration ranges ($\sim$5 s). The detection limit of proposed sensor is $5.0\;{\times}\;10^{-12}$ M (320 pg/L), and it can be used over a period of eight weeks. The practical utility of the sensor has been demonstrated by using it as an indicator electrode in the potentiometric titration of $Cu^{2+}$ with EDTA. The proposed membrane electrode was used for the direct determining of $Cu^{2+}$ content in black and red pepper, and in waste water samples.

• 공업화학
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• 제24권2호
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• pp.171-176
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• 2013

지구온난화 문제가 대두되면서 volatile organic compound (VOC) free 도료의 필요성이 크게 증가하고 있다. 현재 국내외적으로 사용되고 있는 도료의 약 70~80% 정도가 용매형 도료이다. 따라서 지구온난화 문제의 근본적인 해결을 위해서는 도료의 희석제로 사용되고 있는 용매인 휘발성 유기화합물(VOCs)의 배출을 최소화 할 수 있는 무용제형도료의 개발이 필수적이다. 본 연구에서는 무용제도료를 개발하기 위하여 기존의 페놀수지의 특성인 산성화로 인해 도료로 사용 시 부착성이 떨어지는 단점을 보완하기 위해 아크릴계 단량체들을 첨가하였다. 합성한 페놀수지와 PF/PMMA 블렌드 수지와 PF/PHEMA 블렌드 수지의 구조분석결과 블렌드된 형태를 확인하였고 접착인장강도실험을 통해 PF/PMMA 블렌드 수지가 2.818 Mpa의 값으로 도료시스템에 적용 가능성을 확인하였다.

• 대한화학회지
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• 제17권3호
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• pp.169-173
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• 1973

세자리 schiff base리간드로서 salicylidene amino-o-hydroxy benzene 은 salicylaldehyde와 o-amino phenol로서 합성하였으며 이 세자리 schiff base 리간드와 Mo(VI), Mo(V), Mo(IV) 및 Mo(III) 의 과산화상태의 몰리브덴 착물들의 반응으로 새로운 착물[Mo O$_2(H_2O)\;(C_{13}H_9O_2N)]$, [MoO Cl(H$_2O)(C_13H_9O_2N)]$, $[Mo(SCN)_2(H_2O)(C_{13}H_9O2_N)]$ 및 $[Mo(H_2O)_2 (C_{13}H_9O_2N)]_2O$들을 얻었다. 이들 착물에서 Mo(VI), Mo(V) 및 Mo(IV)착물들은 리간드와 몰리브덴의 mole비가 1:1인 착물로서 몰리브덴 이온은 6배위 팔면체로서 주어지나 Mo(III) 착물은 Mo-O-Mo의 산소 bridge bond를 갖는 poly nuclear 착물로서 mole비 1:1인 착물로 주어짐을 원소분석치와 자외선흡광도 및 적외선 spectra의 고찰로서 알아보았다.

• Journal of the Korean Wood Science and Technology
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• 제31권2호
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• pp.84-91
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• 2003

본 연구에서는 3 수종(이태리 포플러, 소나무, 굴참나무재)을 공차별(0, 0.15, 0.3, 0.45 mm)로 초산비닐 수지와 레소시놀-페놀 공축합 수지를 이용하여 접합 제작하였다. 휨시험에서 핑거공차에 따라서 검출되는 AE와 휨강도성능 특성을 살펴본 결과는 다음과 같았다. 레소시놀재의 AE파 발생시기가 초산재보다 빨랐으며, 레소시놀재의 AE파 사상총수는 하중의 증가와 함께 계속적으로 증가하였으며 총발생 사상총수도 초산재보다 휠씬 많이 나타났다. 또한, 레소시놀재의 AE파 사상총수는 낮은 하중에서도 많은 개수가 발생하였다. 비례한도 내에서도 레소시놀 접착제를 사용한 경우에는 많은 AE파가 검출되었다. 따라서 레소시놀 접착제로 접착한 핑거 접합재의 휨시험으로부터 얻은 AE 신호는 핑거공차에 따른 접합재의 강도 예측이나 보증에 이용 가능할 것으로 판단되었다.

• 자연과학논문집
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• 제4권
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• pp.143-159
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• 1991

Pelargonium의 다량증식을 위해서 P. peltatum 'Rouletta'와 P. zonale 'Pinto Red' 두 품종을 MS기본배지에 생장조절물질의 농도를 달리하여 배양하였다. 엽, 엽병, 경, 하배축, 화경의 각 외식체별 callus의 유기와 기관분화에 대한 실험결과는 다음과 같다. A. P. zonale 'Pinto Red'를 부위별로 배양할 경우 callus형성이 가장 양호한 부위는 줄기이며, 이 때의 hormone 농도는 BAP 1.0mg/1+NAA1.0mg/1로 나타났고, NAA 함량이 증가할 수록 callus 형성은 촉진되나 고농도의 NAA가 첨가된 배지에서는 억제되었다. 엽과 하배측의 외식체에서는 경과 엽병에 비해 callus형성이 저조하게 나타났다. B. P. zonale 'Pinto Red'와 엽병으로부터 callus형성을 유도하기 위한 hormone의 농도가 계속된 배양에서 shoot 분화에 영향을 끼치는 것으로 나타났다. Callus형성배지 중에서 BAP 1.0mg/1+NAA 0.05mg/1에서 형성된 callus를 BAP 0.5-1.0mg/1+NAA 0.1-1.0mg/1의 shoot 분화 배지에서 단대배양할 때에 가장 많은 shoot를 분화시켰다. 그러나 BAP가 첨가되지 않은 배지에서 유기된 callus는 단대배양할 시의 BAP와 NAA 농도에 상관없이 shoot의 분화는 되지 않았고 callus만 증식하는 것을 관찰할 수 있었다. C. P. peltatum 'Rouletta'의 엽을 배양할 때 PVP 무처리에서는 poly-phenol물질이 관찰되었고 callus가 전혀 형성되지 않았으나, PVP 0.2%를 첨가한 배지에서는 poly-phenol의 형성도 없었으며 또한 다량의 callus를 증식시킬 수 있었다. D. P, peltatum 'Rouletta'의 외식체에 따른 callus형성을 관찰해 본 결과, 줄기에서 가장 양호한 양상이 나타났고, 최적 hormone 농도는 NAA0.1mg/1+BAP5.0mg/1로 나타났다. shoot는 NAA0.05mg/1+BAP1.0mg/1와 NAA0.1mg/1+BAP5.0mg/1의 배지에서 발생되었다. 이 때 shoot는 기형적인 엽으로 완전한 식물체로 분화하지 못하고 고사하였다.

• 한국재료학회지
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• 제16권5호
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.39-43
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• 2006

The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at ${\pm}10V$. The ms value of surface roughness and the capcitance per unit area are 2.41 and $1.76nF/cm^2$ in the case of 10 wt% cross-linked PVP(20 wt%) layer, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국염색가공학회지
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• 제29권1호
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• pp.25-36
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• 2017

This study worked on the synthesis of waterborne polyurethane/epoxy hybrid resins containing aminosilane compound to replace conventional phenol resins used for a coating material for loudspeaker dampers, which are not harmful to human being. Waterborne polyurethane resins were synthesized from two diisocyanate of 4,4'-diphenylethane diisocyanate and toluene diisocyanate, two polyols of polyester polyols(PEP), polycarbonatediol(PCD), including and anionic center of dimethylol butanoic acid, a chain extenders of ethylenediamine(EDA), and a neutral agent of triethylamine. Synthesized polyurethane resins and commercially available bisphenol A type waterborne epoxy resin were blended in weight ratios of 80:20 to prepare polyurethane/epoxy hybrid resins. The synthesized waterborne polyurethane/epoxy hybrid resins were reacted with aminosilane compound to improve mechanical properties. Aminosilane-treated polyurethane /epoxy hybrid resins showed better mechanical properties.

• International journal of advanced smart convergence
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• 제7권2호
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• pp.38-46
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• 2018

This study proceeded an experiment that can increase such physiological properties of heated radish extract. During the extraction of radish, including the byproduct, an increase in antioxidant properties of radish according the heating temperature was performed. Upon the extracts of radish bark and radish green extract(mucheong), the physiological functionalities and antioxidant activity were investigated. As a result, the color of radish ethanol extract in dependence of heating temperature, showed light brown color at low heating temperature and black color from $150^{\circ}C$. The total polyphenol content significantly increased as a result of heat treatment; 6.7 times and 22 times higher than the control at $110^{\circ}C$ and $150^{\circ}C$, respectively. DPPH radical scavenging ability and antioxidant property increased with increasing heating temperature; in comparison to heat-treated radish at $110^{\circ}C$ and $150^{\circ}C$, $IC_{50}$ decreased by 1/22 times. $IC_{50}$ of the control was 23times higher than $150^{\circ}C$ heat treated radish (Control $IC_{50}$:130.305). According to the graph that represents ABTS activity, antioxidant activity increased in dependence of heat treatment likewise to the total polyphenol content and DDPH radical scavenging activity. Upon heat treatment at $150^{\circ}C$, antioxidant activity in consequence of ABTS assay increased 23 times higher than the control.