• Title/Summary/Keyword: Poly-SiGe Bottom-gate

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Direct deposition technique for poly-SiGe thin film achieving a mobility exceeding 20 $cm^2$/Vs with ~30 nm thick bottom-gate TFTs

  • Lim, Cheol-Hyun;Hoshino, Tatsuya;Hanna, Jun-Ichi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1028-1031
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    • 2009

  • High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with $Si_2H_6$ and $GeF_4$ around at $500^{\circ}C$ directly. Its thickness uniformity was ~ 3% on the entire substrate area. N-channel mobility of ~30 nm thick bottom-gate TFTs exceeded 20 $cm^2$/Vs without any further crystallization.

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