• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Ceramist
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• v.20 no.4
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• pp.55-73
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• 2017

As one of the most versatile semiconductors, zinc oxide (ZnO) with one-dimensional (1-D) nanostructures has been significantly developed for the application of ultraviolet (UV) lasers, photochemical sensors, photocatalysts, and so on. Such 1-D nanowires could be easily achieved due to the anisotropic growth rate along the [0001] direction. However, such typical growth habit leads to decrease the surface area of the (0001) plane, which plays a central role in not only UV lasing action but also photocatalytic reaction. This fact lead us to develop ZnO crystal with enhanced polar surface area through crystal growth control. The purpose of this review is to provide readers a simple route to plate-type ZnO crystal with highly enhanced polar surfaces and their applications for UV-laser, photocatalyst, and antibacterial agents. In addition, we will highlight the recent study on pilot-scale synthesis of plate-type ZnO crystal for industrial applications.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.167-183
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• 2017

Zinc oxide (ZnO) is one of the most versatile semiconductors, and one-dimensional (1D) ZnO nanostructures have attracted significant interest for use in ultraviolet (UV) lasers, photochemical sensors, and photocatalysts, among other applications. It is known that 1D ZnO nanowires can be fabricated readily owing to the anisotropic growth of ZnO along the [0001] direction. However, this type of growth results in a decrease in the surface area of the (0001) plane, which plays a vital role not only in UV lasing but also in the photocatalytic process. Thus, we attempted to synthesize ZnO crystals with an increased polar surface area by controlling the crystal growth process. The purpose of this review is to propose a simple route for the synthesis of plate-like ZnO crystals with highly enhanced polar surfaces and to explore their feasibility for use in UV lasers as well as as a photocatalyst and antibacterial agent. In addition, we highlight the recent progress made in the pilot-scale synthesis of plate-like ZnO crystals for industrial applications.

• The Journal of the Korean dental association
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• v.48 no.10
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• pp.724-728
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• 2010

Accurate analysis of facial asymmetry prior to any orthognathic or orthodontic treatment plan is essential in ensuring good treatment result. Dental CBCT (Cone-beam Computed Tomography) provides as actual three-dimensional measurements of distance and angle without any radiographic magnification as medical CT provides, while its field of view is limited to the oral and maxillofacial area. CBCT is a useful tool for the diagnosis of facial asymmetry. The coordinates of facial landmarks are obtained from the 3D reconstruction software which enables the establishment of perpendicular planes and the identification of the landmarks. Then, the bilateral discrepancies of the landmarks are obtained as spherical polar coordinates which can show the amount of asymmetry and its direction. A method of 3D analysis of facial asymmetry using CBCT is introduced in this report.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.263-268
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• 2011

ZnO hexagonal rods grown in aqueous solution can be changed into a tubular shape by two-step aging in the course of the growing process. In the first step, hexagonal ZnO rods is grown by aging at $90^{\circ}C$ under a highly supersaturated aqueous solution giving rise to a fast precipitation rate. Meanwhile, during the second step aging at $60^{\circ}C$ in the same aqueous solution, the hexagonal polar face (001) having higher surface energy than (010) side planes dissolves to minimize surface energy. Hence the flat (001) face changes to a craterlike face and the hexagonal rod length of ZnO decreases at an initial-stage of this step aging. The formation of the (101) wedge-type faces is ascribed to the resultant of competitive reactions between the dissolution of polar face minimizing the surface energy which is a dominant reaction at the initial stage and the precipitation reaction dissipating supersaturation. At a later stage of the second-step the reaction rates of these two processes in the aqueous solution become similar and the overall reaction is terminated.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.218-223
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• 2014

The domain structures, dielectric properties, and phase transformation of (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20, 30, 35, and 40 mole% have been investigated. PMN-20%PT consists of polar nano-domains (PND) which do not self-assemble into macro-domain plates. PMN-30%PT consists of PNDs which begin to self-assemble into colonies along preferred {110} planes. PMN-35PT consists of miniature polar domains on the nm scale. PMN-40%PT consists of {001} oriented lamella domains on the mm scale that have internal nano-scale heterogeneities. The dielectric properties of poled (001) PMN-x%PT single crystals have been measured for orientations both parallel and perpendicular to the [001] poling direction. The results of the temperature dependence of the dielectric constant and mesh scans for the 30%PT sample demonstrate that the initial monoclinic phase changes to single domain tetragonal phase and to cubic phase with increasing temperature.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.300-304
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• 2009

The domain structures of annealed (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x = 10, 20, 30, 35, and 40 at% were investigated by Polarized Optical Microscopy (POM) and Scanning Force Microscopy (SFM) in the piezoresponse mode. Both Polar Nano-Domains (PND) and long strip-like domains were clearly observed. The results also showed how the domain structure changed between phases with an increasing x in the PMN-x%PT crystals and the domain hierarchy on various length scales ranging from 40 nm to 0.1 mm. Distorted pseudo-cubic phase (x < 20%) consisted of PNDs that did not self-assemble into macro-domain plates. The rhombohedral phase (x = 30%) consisted of PNDs that began to self-assemble into colonies along preferred {110} planes. The monoclinic phase (x = 35%) consisted of miniature polar domains on the nm scale, whereas, the tetragonal phase (x = 40%) consisted of {001} oriented lamella domains on the mm scale that had internal nano-scale heterogeneities, which self-assembled into macro-domain plates oriented along {001} the mm scale.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.6
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• pp.495-507
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• 2023

Considering the continuing discussion about the Korea-Japan undersea tunnel, it is necessary to conduct a scientific investigation into tunnel deformation associated with large ground movements at fault. This paper presents findings obtained from numerical experiments to investigate a seismic lining that adopts rubber-like material. We utilized the user material subroutine to obtain the deformation gradient of the hyperelastic material. Additionally, polar decomposition is used to analyze the results, where the data is displayed on a series of two-dimensional planes using the principal direction, which facilitates a better insight into the deformation. Tunnel engineers could refer to this paper for the procedure to investigate the deformation of hyperelastic material.