• Current Photovoltaic Research
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• 제2권1호
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• pp.18-27
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• 2014

Dye-sensitized solar cells (DSSCs), developed two decades ago, are considered to be an attractive technology among various photovoltaic devices because of their low cost, accessible dye chemistry, ease of fabrication, high power conversion efficiency, and environmentally friendly nature. A typical DSSCs consists of a dye-coated $TiO_2$ photoanode, a redox electrolyte, and a platinum (Pt)-coated fluorine-doped tin oxide (FTO) counter electrode. Among them, redox electrolytes have proven to be extremely important in improving the performance of DSSCs. Due to many drawbacks of iodide electrolytes, many research groups have paid more attention to seeking other alternative electrolyte systems. With regard to this, one-electron outer sphere redox shuttles based on cobalt complexes have shown promising results: In 2014, porphyrin dye (SM315) with the cobalt (II/III) redox couple exhibited a power conversion efficiency of 13% in DSSCs. In this review, we will provide an overview and perspectives of cobalt redox electrolytes in DSSCs.

• 분석과학
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• 제13권1호
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• pp.1-4
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• 2000

로듐이 미량으로 존재할 때 펄스차이 폴라로그래피로 정량할 수 있는 용액조건을 확립하였다. 포름알데히드 0.004%(w/v)-염산 0.75M의 조건에서 가장 예민한 수소촉매파를 얻을 수 있었다. 이 조건에서 검출한계는 $7.0{\times}10^{-12}M$이고 봉우리 전류가 선형인 농도범위는 $1.0{\times}10^{-11}{\sim}1.0{\times}10^{-8}M$이었다. 이 농도범위에서 다른 백금족 원소가 500배까지 존재하여도 방해를 받지 않았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

• 한국산림과학회지
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• 제87권2호
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• pp.260-269
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• 1998

본 연구는 전통적인 민간요법으로 많이 이용되고 있는 옻나무의 옻칠액의 주성분인 urushiol의 암세포증식억제 효과를 검정하기 위하여 L1210(mouse 혈액암세포), PC-9(인체폐암세포), A427(인체폐암세포), KATO III(인체위암세포)에 대한 urushiol의 세포독성을 검정하였다. Urushiol은 column chromatography에서 hexane과 acetone을 혼합하여 step-wise법으로 용출한 분획을 암세포주 L1210, PC-9, A427, KATO III에 투여했다. 그 결과 암세포 증식억제효과는 hexane : acetone(9 : 1) 분획이 가장 높았고, 그외 50%억제농도($IC_{50}$)는 A427 에서 $0.018{\mu}g/m{\ell}$로 가장 우수하였다. 이들 암세포에 대한 urushiol의 hexane: acetone(9 : 1)분획의 50%억제농도($IC_{50}$)를 시판용 tetraplatin 비교한 결과 urushiol이 tetraplatin에 대하여 L1210에서 3.4배, PC-9 에서 3.9배, A427에서 105.5배의 낮은 농도에서도 동일한 억제효과를 나타냈고, KATO III에서는 다소 높았다.

• 분석과학
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• 제6권1호
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• pp.107-119
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• 1993

본 연구에서는 백금족 금속-아세틸아세톤 킬레이트들의 역상 액체 크로마토그래피에서 용리 거동을 조사하여 머무름 메카니즘을 연구하고 이들의 최적 분리 조건을 알아내었다. 중성의 백금족 금속-아세틸아세톤 킬레이트들의 머무름에 소용매성 효과가 크게 영향을 준다는 것을 알았다. 또한, 백금족 금속-아세틸아세톤 킬레이트들의 기하학적 구조가 머무름에 많은 영향을 준다는 것을 알았다. 팔면체 구조인 $Rh(acac)_3$, $Ir(acac)_3$보다는 평면 사각형 구조인 $Pd(acac)_2$, $Pt(acac)_2$가 비극성 정지상과 상호 작용할 수 있는 표면적이 더 크므로 더 늦게 용리된다. 컬럼의 온도를 $25{\sim}45^{\circ}C$까지 변화시키면서 각 이동상 조성에서 van't Hoff plot를 구한 결과 온도에 따른 머무름 메카니즘은 일정함을 알 수 있었다. 이동상의 조성변화에 따라 용질의 머무름 메카니즘이 변화하는가를 알아보기 위하여 엔탈피-엔트로피 상쇄 현상을 조사하였다. 메탄올-물 용매의 조성이 40~70%로 변할 때 팔면체 구조인 $Rh(acac)_3$, $Ir(acac)_3$와 평면 사각형 구조인 $Pd(acac)_2$, $Pt(acac)_2$는 각각 엔탈피-엔트로피 상쇄 현상이 관찰되었으므로 머무름 메카니즘이 킬레이트의 구조에 따라 일정함을 알았다. 아세토니트릴-물 용매 조성이 30~60%로 변할 때는 엔탈피-엔트로피 상쇄 형상이 관찰되지 않았으므로 머무름 메카니즘이 복잡함을 알았다. 백금족 금속-아세틸아세톤 킬레이트들의 최적 분리 조건은 40% 메탄올, polymeric C18 컬럼, $45^{\circ}C$이다.