• Title/Summary/Keyword: Plating Thickness

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Optimum Parameter Values for A Metal Plating Process (금속도금공정에서의 최적 모수 값 결정)

  • Kim, Young-Jin;Hong, Sung-Hoon;Lee, Min-Koo;Kwon, Hyuck-Moo
    • Journal of Korean Institute of Industrial Engineers
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    • v.34 no.3
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    • pp.337-343
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    • 2008
  • The problem of determining the optimum metal plating thicknesses on the plane and curved surfaces of an electronic part is considered. A lower specification limit for the plating thickness is usually pre-specified. In most applications, the plating thickness on the curved surface is proportional to that on the plane surface. The proportion can be adjusted by adding chemical catalysts to the plating fluid. From the economic point of view, nonconforming items with a thickness smaller than the lower specification limit incur rejection costs, such as rework and scrap costs, while a thicker plating may incur an excessive material costs. In this article, an economic model is proposed for simultaneously determining the target plating thickness and the ratio of the plating thickness on the plane surface to that on the curved surface. An illustrative example demonstrates the applicability of the proposed model.

A Study on the Optimized Copper Electrochemical Plating in Dual Damascene Process

  • Yoo, Hae-Young;Chang, Eui-Goo;Kim, Nam-Hoon
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.225-228
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    • 2005
  • In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

Effect of Current Density on Nickel Surface Treatment Process (니켈 표면처리공정에서 전류밀도 효과분석)

  • Kim, Yong-Woon;Joeng, Koo-Hyung;Hong, In-Kwon
    • Applied Chemistry for Engineering
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    • v.19 no.2
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    • pp.228-235
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    • 2008
  • Nickel plating thickness increased with the electric current density, and the augmentation was more thick in $6{\sim}10A/dm^2$ than low current. Hull-cell analysis was tested to evaluate the current density. Optimum thickness was obtained at a temperature of $60^{\circ}C$, and the pH fluctuation of 3.5~4.0. Over the Nickel ion concentration of 300 g/L, plating thickness increased with the current density. The rate of decrease in nickel ion concentration was increased with the current density. The quantity of plating electro-deposition was increased at the anode surface, which was correlated with the increase of plating thickness. The plating thickness was increased because of the quick plating speed. However, the condition of the plating surface becomes irregular and the minuteness of nickel plating layer was reduced with the plating rate. After the corrosion test of 25 h, it was resulted in that maintaining low electric current density is desirable for the excellent corrosion resistance in lustered nickel plating. According to the program simulation, the thickness of diffusion layer was increased and the concentration of anode surface was lowered for the higher current densities. The concentration profile showed the regular distribution at low electric current density. The field plating process was controlled by the electric current density and the plating thickness instead of plating time for the productivity. The surface physical property of plating structure or corrosion resistance was excellent in the case of low electric current density.

Effect of Plating Conditions on Electroless Copper Plating on SiC Fabric (직조된 SiC 섬유에 무전해 구리도금 시 도금 조건의 영향)

  • Lee, Kee Hwan;Sohn, Youhan;Han, Taeyang;Lee, Kyung Jin;Kim, Hye Hung;Han, Jun Hyun
    • Journal of the Korean institute of surface engineering
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    • v.50 no.4
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    • pp.244-250
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    • 2017
  • Effects of plating conditions (dispersant concentration, plating time, and ultrasonication) on electroless Cu plating on SiC fabric woven by crossing of SiC continuous fibers vertically were studied. The ultrasonic dispersion treatment not only did not improve the dispersion of the SiC fibers, but also did not change the plating thickness. The ultrasonication in the pretreatment step of electroless plating did not improve the dispersion of the fibers, while the ultrasonication in the plating step enhanced the dispersion of the fibers and decreased the thickness of the Cu films. It was possible to control the thickness of the Cu coating layer as well as the dispersion of the fibers in the fabric by changing the plating conditions such as dispersant concentration, plating time, and ultrasonication, but it was very difficult to coat copper on the intersection of vertical fibers in the fabric.

The Effect of Barrel Vibration Intensity to the Plating Thickness Distribution

  • Lee, Jun-Ho;Roselle D. Llido
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 1999.10a
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    • pp.15-15
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    • 1999
  • In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the conventional rotating barrel. vibrational barrel (vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components, The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed that the average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value, Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components, However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. $2HD{\;}+{\;}e{\;}{\rightarrow}20H{\;}+{\;}H_2$ Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure thereby resulting to bad plating condition. 1 lot of chip was divided into two equal partion. Each portion was loaded to the same barrel one after the other. Nickel plating and tin-lead plating was performed in the same station. Portion A maintained the normal barrel vibration intensity and portion B vibration intensity was increased two steps higher. All other parameters, current, solution condition were maintained constant. Generally, plating method find procedures were carried out in a best way to maintained the best plating condition. After plating, samples were taken out from each portion. molded and polished. Plating thickness was investigated for both. To check consistency of results. 2nd trial was done now using different lot of another characteristics.

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Surface Treatment of Backplate for Part 25 Aircraft Metal Brake Pads (Part 25급 항공기용 금속계 제동패드 백플레이트의 표면처리)

  • Hohyeong Kim;Min-ji Kim;Kyung-taek Kim
    • Journal of Advanced Navigation Technology
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    • v.28 no.4
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    • pp.544-551
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    • 2024
  • In this study, the electrochemical polarization data required for the simulation of the plating process, simulation of plating conditions, and characterization of the plating layer were discussed. The electrochemical polarization data obtained by potentiodynamic polarization tests and potentiostat analysis of Ni and Cu were used to observe changes in the overvoltage distribution with the flow conditions of the plating solution. In the simulation of plating conditions, the current density distribution and plating thickness distribution were evaluated under different variables to analyze the influence of the location and number of contacts on the rack pins on the plating quality. Simulation results under variables such as anode geometry, interpole distance, auxiliary anode placement, and variation of substrate spacing were used to explore ways to improve plating thickness deviation. Additionally, plating layer characterization analyzed the thickness, adhesion, and delamination of the plating layer with and without buffer layer formation. The simulation results can be utilized as important basic data for improving the efficiency and quality of the plating process.

Application of Plating Simulation for PCB and Pakaging Process (PCB 및 패키징 공정에서의 도금 시뮬레이션 기술 적용)

  • Lee, Kyu Hwan
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.3
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    • pp.1-7
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    • 2012
  • Electroplating technology is widely used in semiconductor microelectronic industry. With the development of semiconductor integrated circuit to high density and light-small scale, Extremely high quality and plated uniformity of the deposited metals are needed. Simulation technique can help to obtain better plating results. Although a few plating simulation softwares have been commercialized, plating simulation is not widely prevalent in Korea. In this paper, principle of electroplating and mathematical modeling of plating simulation are discussed. Also introduced are some cases enhancing plating thickness uniformity on leadframe, PCB and wafer by using plating simulation.

The Surface Improvement by Supercritical Nano Plating (슈퍼크리티컬 나노 플레이팅에 의한 표면개질)

  • Kim, Yun-Hae;Bae, Chang-Won;Kim, Do-Wan;Moon, Kyung-Man;Kim, Dong-Hun;Jo, Young-Dae;Kang, Byung-Yoon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.9
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    • pp.913-921
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    • 2009
  • In this study, supercritical nano plating was performed to observe its effect on materials. Using supercritical carbon dioxide as a solvent, we observed how different pressures and temperatures of the supercritical fluid affected the process and its outcome. The plating current increases as pressure increases from 8 MPa to 16 MPa, but it decreases after that. Similarly, the plating current increases as temperature is increased from $35^{\circ}C$ to $45^{\circ}C$, but the current decreases after that. Also, the thickness of the wet electrolyte plating is about $35\sim50{\mu}m$, while the thickness of the plating done using supercritical fluid is about $20\sim25{\mu}m$. At the results, It to it is considered that supercritical nano plating enable to form more thin and stable plating than wet electroplating methods. Also both of the electroplating methods could be affected plating quality by surface condition, and the supercritical nano plating has been confirmed to product more uniform plating surface than wet electroplating.

Electroplating process for the chip component external electrode

  • Lee, Jun-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.1-2
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    • 2000
  • In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

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Cu Plating Thickness Optimization by Bottom-up Gap-fill Mechanism in Dual Damascene Process (Dual Damascene 공정에서 Bottom-up Gap-fill 메커니즘을 이용한 Cu Plating 두께 최적화)

  • Yoo, Hae-Young;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.93-94
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    • 2005
  • Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.

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