• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• 분석과학
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• 제7권4호
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• pp.483-492
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• 1994

Glow Discharge를 이용한 고체 시료의 극미량 원소분석은 흡광, 방출, 형광 그리고 질량 분석 방법들이 특히 금속 시료들의 분석을 위해 많이 연구되어지고 있다. 본 연구에서는 자체 제작한 Gas-Jet-assisted Glow Discharge(GJGD)를 이용하여 각 실험변수에 따른 영향을 비교하여 보았다. 제작한 글로우 방전의 특성화 실험에 사용한 실험 변수로는 전류, 방전 가스의 흐름 속도, 압력 등이었고 시료는 황동을 사용하였다. 시료의 주원소인 구리(Cu)와 아연(Zn)의 방출선세기와 방전가스인 아르곤(Ar)의 상대적인 세기를 비교하여 보았는데, 대체적으로 전류의 증가는 튕겨나옴(Sputtering) 현상을 촉진시켜 방출선의 세기가 증가하였고 가스 흐름 속도는 플라즈마 속으로의 수송과 확산에 관여하여 증가될수록 방출선의 세기를 감소시켰다. 글로우 방전 내의 압력의 증가는 튕겨나옴 현상을 감소시킴과 더불어 시료 표면으로의 재부착을 증가시켜 방출선의 세기가 급격히 감소함을 보여 주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• 한국해양공학회지
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• 제30권5호
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• pp.356-360
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• 2016

Recently, the lifetime extension of nuclear power plants has been considered. Thus, it is necessary to consider facility safety management and economic management. However, when the bolts in nuclear power plants are replaced and the turbines of nuclear power plant are disassembled, numerous problems are found in relation to stuck bolts in clamping parts. In order to solve these problems, a hybrid vacuum chamber was first designed and manufactured. It can perform arc ion plating and sputtering, which were used to deposit Ti/TiN on an A913 B7 bolt. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were conducted to determine the composition and characteristics of the bolt, and tests were conducted to determine how long the bolt could endure under various conditions in a nuclear power plant. The SEM and XRD results clearly showed a continual and even coating layer. When this TiN-coated bolt is used in a nuclear power plant, the lifetime can be extended compared to a conventional bolt, but it is necessary to determine what additional properties are required.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.328-331
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• 2012

With the recent development of super-precision optical instruments, camera modules for devices, such as portable terminals and digital camera lenses, are increasingly being used. Since an optical lens is usually produced by high-temperature compression molding methods using tungsten carbide (WC) alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coatings for the core surface. In this study, Rhenium-Iridium (Re-Ir) thin films were deposited onto a WC molding core using a sputtering system. The Re-Ir thin films were prepared by a multi-target sputtering technique, using iridium, rhenium, and chromium as the sources. Argon and nitrogen were introduced through an inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having a composition ratio of 30 : 70, and the Re-Ir thin films were formed with a 240 nm thickness. Re-Ir thin films on WC molding core were analyzed by scanning electron microscope (SEM), atomic force microscope (AFM), and Ra (the arithmetical average surface roughness). Also, adhesion strength and coefficient friction of Re-Ir thin films were examined. The Re-Ir coating technique has received intensive attention in the coating processes field because of promising features, such as hardness, high elasticity, abrasion resistance and mechanical stability that result from the process. Re-Ir coating technique has also been applied widely in industrial and biomedical applications. In this study, WC molding core was manufactured, using high-performance precision machining and the effects of the Re-Ir coating on the surface roughness.

• 한국진공학회지
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• 제16권1호
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• pp.15-22
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• 2007

$BCl_3-Cl_2$ 플라즈마에서 이온 강화 식각 시 source power에 따른GaAs(100)의 표면 형태 변화를 연구하였다. Floating potential에서는 이온 포격(bombardment)이 거의 없기 때문에, 화학적 반응에 의존한 순수한 습식 식각에 의해 나타나는 것과 같이 <110> 능선과 {111} facet으로 이루어진 표면이 관찰 되었다. 이러한 형태는 식각 시작후 1분 이내에 형성되기 시작하여 시간이 지남에 따라 커진다. 동일한 압력에서 source power를 변화시키면 식각된 표면이 다른 형태를 보인다. 100 W 정도의 낮은 source power에서는 결정학적 표면이 형성되지 않지만, 900 W 정도의 높은 source power에서는 결정학적 표면이 잘 형성된다. 이것은 건식 식각에 필수적인 여기된 반응성 물질의 양이 source power에 크게 좌우되기 때문이다. 높은 source power에서는 반응성 물질의 농도가 높아지고, 열역학적으로 가장 안정한 GaAs(100) 표면이 형성 된다. 반면에 반응성 물질이 부족할 경우에는 표면 형태는 sputtering에 의해 결정된다. Scaling theory에 기초한 표면의 통계적 분석 적용 시, 두개의 spatial exponent가 발견 되었다. 하나는 1 보다 작고 원자 수준의 표면형태 형성 기구에 의해 결정되고, 다른 하나는 1보다 크며 facet 형성 기구와 같이 큰 규모의 형태 형성 기구에 의한 결과로 생각된다.

• 한국진공학회지
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• 제16권4호
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• pp.250-261
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• 2007

[ $BCl_3-Cl_2$ ] 플라즈마에서 GaAs(100)의 이온 강화 식각 시 source power에 따른 표면 형태 변화를 연구하였다. Floating 전위에서는 이온 포격(bombardment)이 거의 없고, 화학적 반응에 의존한 순수한 습식 식각에 의해 나타나는 것과 같이 <110> 능선과 {111} 표면으로 이루어졌다. 900 W 정도의 높은 source power에서는 결정학적 표면이 잘 형성되지만, 100 W 정도의 낮은 source power에서는 결정학적 표면이 형성되지 않는다. 이것은 건식 식각에 필수적인 Cl 원자와 같은 여기된 반응성 물질의 양이 source power에 크게 좌우되기 때문이다. 높은 source power에서는 반응성 물질의 농도가 높아지고, GaAs(100) 표면은 열역학적으로 가장 안정한 표면이 된다. 반면에 반응성 물질이 부족할 경우에는 표면 형태는 sputtering에 의해 결정된다. Scaling theory에 기초한 표면의 통계적 분석 적용 시, 두 개의 spatial exponent가 발견 되었다. 하나는 1 보다 작고 원자 수준의 표면형태 형성 기구에 의해 결정되고, 다른 하나는 1보다 크며 facet 형성 기구와 같이 큰 규모의 형태 형성 기구에 의한 결과로 생각된다. 시료들에 bias가 인가 되면, 표면에 포격이 일어난다. 그 결과 높은source power에서 능선 형성이 억제되고, 낮은 source power에서는 섬들의 형성이 억제된다.

• Korean Chemical Engineering Research
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• 제44권2호
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• pp.160-165
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• 2006

니켈 분말을 이용하여 제조된 다공성 니켈 지지체 위에 팔라듐-구리-니켈 합금 수소 분리막을 제조하였다. 다공성 니켈 지지체는 열적안정성과 수소취성에 강한 모습을 나타내었으며, 다공성 니켈 지지체에 기존의 습식 방식인 염산에 의한 표면 전처리 방식을 건식 방식인 플라즈마 표면개질로 대체하였다. 다공성 니켈 지지체의 기공을 매립하기 위해 전해도금방식으로 $2{\mu}m$의 두께로 코팅하였으며, 그 후 니켈 도금된 지지체 위에 스퍼터 방식으로 팔라듐을 $4{\mu}m$, 구리를 $0.5{\mu}m$의 두께로 코팅하였다. 이와 같이 제조된 시편을 $700^{\circ}C$에서 1시간 구리 리플로우를 통해 미세기공이 없는 매우 치밀한 팔라듐-구리-니켈 합금 분리막을 제조하였다. 그 결과 팔라듐-구리-니켈 합금 수소분리막은 다공성 니켈지지체와 좋은 접착성을 가지고 있으며 수소-질소 혼합가스에서 무한대의 분리도 값을 나타내었다.